Collaborative Research: FuSe: Interconnects with Co-Designed Materials, Topology, and Wire Architecture
合作研究:FuSe:与共同设计的材料、拓扑和线路架构互连
基本信息
- 批准号:2328906
- 负责人:
- 金额:$ 118.6万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing Grant
- 财政年份:2023
- 资助国家:美国
- 起止时间:2023-10-01 至 2026-09-30
- 项目状态:未结题
- 来源:
- 关键词:
项目摘要
Nontechnical description:This interdisciplinary research project focuses on the synthesis of new materials which have a high electrical conductivity for small wires. This is important because more powerful and energy-efficient computers require smaller wires to connect the switches (transistors) as well as the memory elements. The key idea is to use a new type of materials for which electrons cannot be scattered at the wire surfaces. The project discovers such new materials and develops methods for their synthesis and integration into computer chip manufacturing, facilitating more powerful and energy-efficient chips used in devices ranging from smartphones to large data centers. The project includes a multifaceted education and workforce development initiative, involving education leaders from Historically Black Colleges and Universities and Minority Serving Institutions, scientists from research intensive universities, and development engineers from companies in the semiconductor industry. These initiatives are designed to increase diversity, quality, and quantity of the USA-based semiconductor chip manufacturing workforce. Technical description:This project aims to control the synthesis of new high-conductivity electrical interconnect materials and to co-design the conductor materials with the back-end dielectric to achieve a conductivity advantage over existing Cu technology in future integrated circuits. This involves exploiting scattering-immune surface transport in topological metals, tuning their Fermi level through strain and dielectric engineering for maximum topological effects, and achieving crystal orientation/chirality control for high conductivity in topological and anisotropic metals. The project uses a tight integration of complementary novel synthesis methods, high-throughput characterization, ab-initio electron transport calculations, as well as strain, dielectric and contact engineering. More specifically, it includes synthesis of topological and directional interconnect conductors using complementary techniques to prototype several classes of materials for the future semiconductor industry, co-design crystal growth orientation and chirality with electron transport to leverage favorable conduction including scattering-immune unidirectional surface transport in Weyl semimetals, and tuning of the Fermi level to Weyl nodes by elastic strain.This project is co-funded by the Historically Black Colleges and Universities Undergraduate Program (HBCU-UP), which provides awards to strengthen STEM undergraduate education and research at HBCUs.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
非技术描述:该跨学科研究项目的重点是合成针对小电线的高电导率的新材料。这很重要,因为更强大,更节能的计算机需要较小的电线来连接开关(晶体管)以及内存元素。关键的想法是使用一种新型的材料,该材料不能散布在电线表面上。该项目发现了这种新材料,并开发了将其合成和集成到计算机芯片制造中的方法,从而促进了从智能手机到大型数据中心的设备中使用的更强大和节能的芯片。该项目包括一项多方面的教育和劳动力发展计划,涉及历史悠久的黑人学院和大学的教育领导者以及为机构提供服务的机构,研究密集大学的科学家以及半导体行业公司的开发工程师。这些举措旨在增加基于美国的半导体芯片制造业人士的多样性,质量和数量。技术描述:该项目旨在控制新的高导电性电气互连材料的合成,并与后端电介质共同设计导体材料,以在未来的集成电路中获得比现有CU技术的电导率优势。这涉及利用拓扑金属中的散射 - 免疫表面转运,通过应变和介电工程来调整其费米水平,以最大程度地拓扑效应,并实现晶体方向/手性控制,以在拓扑和各向异性金属中进行高电导率。该项目使用互补的新型合成方法,高通量表征,Ab-Initio电子传输计算以及应变,介电和接触工程的紧密整合。 More specifically, it includes synthesis of topological and directional interconnect conductors using complementary techniques to prototype several classes of materials for the future semiconductor industry, co-design crystal growth orientation and chirality with electron transport to leverage favorable conduction including scattering-immune unidirectional surface transport in Weyl semimetals, and tuning of the Fermi level to Weyl nodes by elastic strain.This project is由历史悠久的黑人学院和大学本科课程(HBCU-UP)共同资助,该课程为HBCUS提供了奖励,以加强STEM本科教育和研究。该奖项反映了NSF的法定任务,并被认为是值得通过基金会的知识分子优点和更广泛影响的评估评估来通过评估来获得支持的。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Daniel Gall其他文献
NiAl as a Potential Material for Liner- and Barrier-Free Interconnect in Ultrasmall Technology Node
NiAl 作为超小型技术节点中无衬里和无障碍互连的潜在材料
- DOI:
10.1063/1.5049620 - 发表时间:
2018 - 期刊:
- 影响因子:0
- 作者:
Linghan Chen;Daisuke Ando;Yuji Sutou;Daniel Gall;Junichi Koike - 通讯作者:
Junichi Koike
CuTi as Potential Liner- and Barrier-Free Interconnect Conductor
CuTi 作为潜在的无衬里和无障碍互连导体
- DOI:
- 发表时间:
2024 - 期刊:
- 影响因子:3.1
- 作者:
Minghua Zhang;Daniel Gall - 通讯作者:
Daniel Gall
An Adaptable Implementation of ACT-R with Refraction in Constraint Handling Rules
约束处理规则中带有折射的 ACT-R 的适应性实现
- DOI:
- 发表时间:
2015 - 期刊:
- 影响因子:0
- 作者:
Daniel Gall - 通讯作者:
Daniel Gall
EDACC - An Advanced Platform for the Experiment Design, Administration and Analysis of Empirical Algorithms
EDACC - 用于实验设计、管理和经验算法分析的先进平台
- DOI:
- 发表时间:
2011 - 期刊:
- 影响因子:0
- 作者:
A. Balint;Daniel Diepold;Daniel Gall;Simon Gerber;Gregor Kapler;R. Retz - 通讯作者:
R. Retz
Prediction of improved magnetization and stability in Fe16N2 through alloying
预测通过合金化提高 Fe16N2 的磁化强度和稳定性
- DOI:
- 发表时间:
2019 - 期刊:
- 影响因子:3.2
- 作者:
N. Szymanski;V. Adhikari;M. Willard;P. Sarin;Daniel Gall;S. Khare - 通讯作者:
S. Khare
Daniel Gall的其他文献
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{{ truncateString('Daniel Gall', 18)}}的其他基金
E2CDA: Type I: Collaborative Research: Interconnects Beyond Cu
E2CDA:I 类:协作研究:铜以外的互连
- 批准号:
1740271 - 财政年份:2017
- 资助金额:
$ 118.6万 - 项目类别:
Continuing Grant
Metal-insulator Transitions in 2D and 3D Refractory Nitrides
2D 和 3D 难熔氮化物中的金属-绝缘体转变
- 批准号:
1712752 - 财政年份:2017
- 资助金额:
$ 118.6万 - 项目类别:
Continuing Grant
DMREF/Collaborative Research: Nitride Discovery - Creating the Knowledge Base for Hard Coating Synthesis
DMREF/合作研究:氮化物发现 - 创建硬涂层合成知识库
- 批准号:
1629230 - 财政年份:2016
- 资助金额:
$ 118.6万 - 项目类别:
Standard Grant
Hard Coatings: Toughness Enhancement through Responsive Phase Change
硬质涂层:通过响应相变增强韧性
- 批准号:
1537984 - 财政年份:2015
- 资助金额:
$ 118.6万 - 项目类别:
Standard Grant
Nitride Compounds: Property Anomalies Near Structural Instabilities
氮化物:接近结构不稳定的性质异常
- 批准号:
1309490 - 财政年份:2013
- 资助金额:
$ 118.6万 - 项目类别:
Continuing Grant
DMREF/Collaborative Research: Nitride Discovery - Creating the Knowledge Base for Hard Coating Design
DMREF/协作研究:氮化物发现 - 创建硬质涂层设计知识库
- 批准号:
1234872 - 财政年份:2012
- 资助金额:
$ 118.6万 - 项目类别:
Standard Grant
Adaptive High-Temperature Lubrication through Nanopore Channels
通过纳米孔通道进行自适应高温润滑
- 批准号:
1031201 - 财政年份:2010
- 资助金额:
$ 118.6万 - 项目类别:
Standard Grant
Self-Lubricating Nanoporous Hard Coatings
自润滑纳米孔硬质涂层
- 批准号:
0653843 - 财政年份:2007
- 资助金额:
$ 118.6万 - 项目类别:
Standard Grant
CAREER: Nanostructure Growth from the Vapor Phase
职业:气相纳米结构的生长
- 批准号:
0645312 - 财政年份:2007
- 资助金额:
$ 118.6万 - 项目类别:
Continuing Grant
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相似海外基金
Collaborative Research: FuSe: R3AP: Retunable, Reconfigurable, Racetrack-Memory Acceleration Platform
合作研究:FuSe:R3AP:可重调、可重新配置、赛道内存加速平台
- 批准号:
2328975 - 财政年份:2024
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$ 118.6万 - 项目类别:
Continuing Grant
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合作研究:FuSe:R3AP:可重调、可重新配置、赛道内存加速平台
- 批准号:
2328973 - 财政年份:2024
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$ 118.6万 - 项目类别:
Continuing Grant
Collaborative Research: FuSe: R3AP: Retunable, Reconfigurable, Racetrack-Memory Acceleration Platform
合作研究:FuSe:R3AP:可重调、可重新配置、赛道内存加速平台
- 批准号:
2328972 - 财政年份:2024
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$ 118.6万 - 项目类别:
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Collaborative Research: FuSe: R3AP: Retunable, Reconfigurable, Racetrack-Memory Acceleration Platform
合作研究:FuSe:R3AP:可重调、可重新配置、赛道内存加速平台
- 批准号:
2328974 - 财政年份:2024
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$ 118.6万 - 项目类别:
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Collaborative Research: FuSe: Metaoptics-Enhanced Vertical Integration for Versatile In-Sensor Machine Vision
合作研究:FuSe:Metaoptics 增强型垂直集成,实现多功能传感器内机器视觉
- 批准号:
2416375 - 财政年份:2023
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