Utilization of High Powered Pulsed Magnetron Sputtering in the Formation of Engineered Films and Surfaces

利用高功率脉冲磁控溅射形成工程薄膜和表面

基本信息

  • 批准号:
    0409728
  • 负责人:
  • 金额:
    $ 15.6万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2004
  • 资助国家:
    美国
  • 起止时间:
    2004-07-01 至 2007-06-30
  • 项目状态:
    已结题

项目摘要

Highly Ionized Pulsed Magnetron Sputtering technologies are in their infancy with only about a dozen reports on the topic published worldwide, and yet they have been identified as one of the most important sputtering topics for the future. HIPMS uses short pulses of very high peak power, several hundred kW to a few MW, to create very dense plasmas between the vapor source and the substrate, up to 1.3X1019/m3 near the substrates. Proposed is the first US based HIPMS study that will focus on both the discharge formation and in-situ ellipsometric studies of early stage film formation, ion-surface interactions, and ultimately on the generation improved film morphologies and new metastable materials. Initial investigations utilizing these highly ionized fluxes will be undertaken to produce more conformal and adherent films under precisely controlled low-energy ion-assisted growth conditions on flat, as well as selected three-dimensional substrates. The materials selected for this study include metallic Cr, reactively deposited Cr-N based films and multilayers, as well as amorphous and nanocrystalline CrBN, and potentially Zr-Pd and/or Zr-Pt metallic glasses.This HIPMS program will provide immediate gains for both academic and industrial users, as HIPMS technologies can be directly incorporated into existing magnetron systems on any scale. Magnetron sputtering is one of the most widely used techniques for producing thin films for semiconductor, tribological (wear resistant), decorative and other applications, ranging from the coatings on the inside of potato chip bags to thin films for sensor systems in critical defense applications. These technologies are also used in both the private and defense sectors to develop new materials, as they allow nanoscale tailoring of materials properties that control hardness, reflectance, electrical conductivity, magnetic behavior, chemical reactivity, etc... However, precise control of the energetics of thin film growth and coating of complex three-dimensionally shaped parts have been longstanding issues in magnetron sputtering, and HIPMS may provide a means of overcoming these limitations in many applications. Industry interest in the program, as well as involvement is high. The educational impacts of this project include undergraduate and graduate student training, community outreach, and collaborative research activities to enhance the experience of Nebraska students within a broader international research community. The investigators have consistently involved a large number of female and underrepresented students in their work, and are positioned to serve as role models for these students on an international level.
高电离脉冲磁控溅射技术还处于起步阶段,目前在世界范围内仅发表了十几篇有关该主题的报道,但已被确定为未来最重要的溅射主题之一。HIPMS使用峰值功率非常高的短脉冲,几百千瓦到几兆瓦,在蒸气源和基板之间产生非常密集的等离子体,在基板附近高达1.3X1019/m3。这是第一个基于美国的HIPMS研究,将重点放在放电形成和早期膜形成、离子表面相互作用的原位椭圆偏振研究上,并最终研究改进的膜形态和新的亚稳材料。利用这些高电离通量的初步研究将在精确控制的低能离子辅助生长条件下在平面上以及选定的三维基底上生产更适形和粘附的薄膜。本研究选择的材料包括金属Cr,反应沉积Cr- n基薄膜和多层膜,以及非晶和纳米晶CrBN,以及潜在的Zr-Pd和/或Zr-Pt金属玻璃。这个HIPMS项目将为学术和工业用户提供即时收益,因为HIPMS技术可以直接集成到任何规模的现有磁控管系统中。磁控溅射是半导体、摩擦学(耐磨)、装饰和其他应用中最广泛使用的薄膜生产技术之一,从马铃薯片袋内部的涂层到关键国防应用中传感器系统的薄膜。这些技术也用于私营和国防部门开发新材料,因为它们允许纳米级定制材料特性,控制硬度,反射率,导电性,磁性行为,化学反应性等。然而,精确控制薄膜生长和复杂三维形状部件涂层的能量学一直是磁控溅射中长期存在的问题,而HIPMS可能在许多应用中提供克服这些限制的手段。业界对该项目的兴趣和参与度都很高。该项目的教育影响包括本科生和研究生培训,社区外展和合作研究活动,以提高内布拉斯加州学生在更广泛的国际研究社区中的经验。调查人员一直在他们的工作中涉及大量女性和代表性不足的学生,并被定位为在国际层面上为这些学生树立榜样。

项目成果

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Suzanne Rohde其他文献

Suzanne Rohde的其他文献

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{{ truncateString('Suzanne Rohde', 18)}}的其他基金

Thin Film Growth and Surface Modification through High Powered Pulsed Magnetron Sputtering
通过高功率脉冲磁控溅射进行薄膜生长和表面改性
  • 批准号:
    0953057
  • 财政年份:
    2008
  • 资助金额:
    $ 15.6万
  • 项目类别:
    Standard Grant
Thin Film Growth and Surface Modification through High Powered Pulsed Magnetron Sputtering
通过高功率脉冲磁控溅射进行薄膜生长和表面改性
  • 批准号:
    0727818
  • 财政年份:
    2007
  • 资助金额:
    $ 15.6万
  • 项目类别:
    Standard Grant
SBIR Phase I: Optimization of Cathode Sources for High Power Impulse Magnetron Sputtering
SBIR 第一阶段:高功率脉冲磁控溅射阴极源的优化
  • 批准号:
    0637600
  • 财政年份:
    2007
  • 资助金额:
    $ 15.6万
  • 项目类别:
    Standard Grant
Development of Application Specific Wear-Resistant Tribological Coatings through Finite Element Analysis and Ultra-High Rate Reactive Sputtering
通过有限元分析和超高速率反应溅射开发特定用途的耐磨摩擦涂层
  • 批准号:
    9978789
  • 财政年份:
    1999
  • 资助金额:
    $ 15.6万
  • 项目类别:
    Standard Grant
NSF Young Investigator
NSF 青年研究员
  • 批准号:
    9358108
  • 财政年份:
    1993
  • 资助金额:
    $ 15.6万
  • 项目类别:
    Continuing Grant

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