SBIR Phase I: Optimization of Cathode Sources for High Power Impulse Magnetron Sputtering

SBIR 第一阶段：高功率脉冲磁控溅射阴极源的优化

• 批准号: 0637600
• 负责人: Suzanne Rohde
• 金额: --
• 依托单位: Ionized Magnetron Flux, LLC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2007
• 资助国家: 美国
• 起止时间: 2007-01-01 至 2007-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0637600&HistoricalAwards=false
• 关键词: SBIR; Phase; Optimization; Cathode; Sources

This Small Business Innovation Research (SBIR) Phase I research project is focused on developing technologies to enable High Power Impulse Magnetron Sputtering (HIPIMS) to become cost competitive. This research will develop new sputtering cathodes and other rate enhancements for use with high powered, short duration HIPIMS power supplies. These HIPIMS supplies generate highly ionized deposition fluxes (up to 95%) that are essential to controllably fill vias, ion bombard growing films and manipulate thin film properties to improve wear, corrosion, optical and other properties, but to date their use has been precluded commercially by low deposition rates. The investigators will use a combination of modeling and proprietary technical innovation in magnetron cathode design and power supply modification to address this critical rate issue. The broader impact of this project will be that rate enhanced sputtering tools will permit commercialization of recent HIPIMS developments. HIPIMS power supplies are currently manufactured in Sweden, the U.K., and Poland and HIPIMS specific cathodes are not available. The impact of this technology is estimated to be more significant than multi-cathode unbalanced magnetron sputtering. The demand for sputtered films continues to increase, with the market for sputtering target materials alone expected to exceed $1.8 billion in 2006.

该小型企业创新研究(SBIR)第一阶段研究项目专注于开发使高功率脉冲磁控溅射(HIPIMS)具有成本竞争力的技术。这项研究将开发新的溅射阴极和其他速率增强，用于高功率、短持续时间的HIPIMS电源。这些HIPIMS供应产生高电离沉积通量(高达95%)，这对于可控填充通孔、离子轰击生长薄膜和操纵薄膜性能以改善磨损、腐蚀、光学和其他性能是必不可少的，但迄今为止，由于沉积速率较低，它们的商业应用一直受到阻碍。研究人员将在磁控管阴极设计和电源改造方面结合建模和专有技术创新来解决这一关键的速率问题。该项目的更广泛影响将是，速率增强型溅射工具将使HIPIMS的最新发展实现商业化。HIPIMS电源目前在瑞典、英国和波兰生产，HIPIMS专用阴极不可用。据估计，这项技术的影响比多阴极非平衡磁控溅射更显著。对溅射薄膜的需求继续增加，仅溅射靶材市场在2006年就有望超过18亿美元。