SBIR Phase I: Highly Efficient Exhaust Cleanup Technology for Environmentally Benign Processing

这个小型企业创新研究(SBIR)第一阶段项目将开发一种新型集成反应消减模块(IRAM)，可以有效地从沉积和蚀刻制造过程的废液中去除固化化学物质。与日俱增的安全担忧和不断攀升的环保成本，是半导体制造业不断向美国以外转移的驱动力之一。在这个项目中，危险化学品将在可拆卸的高面积过滤元件上反应转化为惰性固体膜。集成的高速下游压力控制将主动抑制可能影响工艺的IRAM引起的压力波动。该反应过程将应用高效的化学反应将固化的化学物质转化为稳定的惰性薄膜。目标包括卓越的低压排气歧管和泵的可维护性，以及显著提高器件处理系统的安全性，从而以具有竞争力的成本促进安全和环境友好的半导体制造。不利影响：化学气相沉积(CVD)、原子层沉积(ALD)和反应离子刻蚀(RIE)被认为是半导体制造技术的基石。在过去的十年里，这些制造技术也转移到了爆炸性增长的纳米技术领域。这些工艺技术释放出活性、有毒和固化的化学物质，并在低压排气歧管中产生危险和破坏性的残留物，堵塞管道并破坏真空泵。在排气歧管典型的低压和低温条件下，缓慢而低效的化学反应会将反应性排气混合物转化为有害残留物，而不是完全反应的惰性薄膜。频繁的维护需要在环境中暴露这些含有有害残留物的排气歧管，这会给工人和工作场所带来风险。日益增长的安全担忧和不断上升的环保成本严重阻碍了半导体行业，并降低了其在美国的竞争力。为了克服这一缺陷，IRAM技术将应用环境友好的化学方法，通过本地化生产寿命短的高活性物种，能够从废气中完全提取固化化学物质，从而生产惰性固体薄膜。这一新型化学技术具有广泛的器件加工应用，并能对制造成本产生积极影响。关键词：CVD、RIE、ALD、减排、半导体制造、LPCVD、FORELINE、EH&A；S、环境健康与安全.E.B.A 5/24/04

This Small Business Innovation Research (SBIR) Phase I project will develop anovel integrated reactive abatement module (IRAM) that effectively removes solidifyingchemicals from the exhaust effluent of deposition and etch manufacturing processes. Growingsafety concerns and escalating costs dedicated to environmental protection is one of the drivers tocontinuously migrate semiconductor manufacturing outside of the US. In this project,hazardous chemicals will be reactively converted into inert solid films over a removable high-area filtration element. An integrated high-speed downstream pressure control will activelysuppress IRAM-induced pressure fluctuations that may affect the process. The reactive processwill apply highly effective chemical reactions to convert the solidifying chemicals into stableinert films. Objectives include superior maintainability of low-pressure exhaust manifolds andpumps and substantially improved safety of device processing systems, hence promoting safe andenvironmentally benign semiconductor manufacturing at a competitive cost.Broader impact: Chemical Vapor Deposition (CVD), Atomic Layer Deposition (ALD) andReactive Ion Etching (RIE) are considered the cornerstones of semiconductor manufacturingtechnology. In the last decade these manufacturing-technologies have also migrated into theexplosively growing area of nano-technology. These process techniques emit reactive, toxic andsolidifying chemicals and produce a hazardous and destructive residue in low-pressure exhaustmanifolds that clogs up the conduits and destroys the vacuum pumps. Slow and inefficientchemical reactions, driven by the typically low pressure and low temperature conditions inexhaust manifolds, convert the reactive exhaust mixture into hazardous residue instead ofcompletely reacted inert films. Frequent maintenance requires ambient exposure of thesehazardous-residue-containing exhaust manifolds with risks to the workers and the workplace.Growing safety concerns and escalating cost dedicated to environmental protection severelyhampers the semiconductor industry and reduces its competitiveness in the US. Overcoming thisdeficiency, IRAM technology will apply environmentally benign chemistry with a localizedproduction of short-lived highly reactive species capable to completely extracting the solidifyingchemicals out of exhaust streams to produce inert solid films. This novel chemistry has a broadrange of device processing applications and can positively impact manufacturing costs.Key Words: CVD, RIE, ALD, abatement, semiconductor manufacturing, LPCVD, foreline,EH&S, environmental health and safety.E.B.A 5/24/04