CAREER: Multiscale, Multiphysics Modeling of Synthesis, Manipulation, and Characterization of Si-Ge-Insulator Nanosystems
职业:Si-Ge-绝缘体纳米系统的合成、操作和表征的多尺度、多物理场建模
基本信息
- 批准号:0449373
- 负责人:
- 金额:$ 40万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2005
- 资助国家:美国
- 起止时间:2005-02-15 至 2011-06-30
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
ABSTRACTPI: Gyeong Hwang Institution: University of Texas-AustinProposal Number: 0449373Research: This CAREER project aims to develop the theoretical foundations for the synthesis, manipulation, and characterization of silicon-germanium (Si-Ge) insulator nanosystems, including i) Si-SiO2 multi quantum wells, ii) Si nanowires encapsulated within SiO2, and iii) Si/Ge nanocrystals embedded in insulator (such as SiO2, SiOxNy, high-k). The research activities will focus on (1) investigation of the fundamental mechanics of oxidation of Si nanostructures and Si-oxide interfacial properties; growth of Si/Ge nanoparticles on insulator surfaces; formation of Si/Ge nanoparticles in insulator matrices; and defect engineering and chemical doping in Si-Ge-Insulator nanosystems and (2) development of predictive multiscale, multiphysics models capable of linking the synthesis and structure of the nanostructured materials systems to their properties in diverse process conditions and environments, by integrating various state-of-the-art theoretical techniques at different time and length scales including first principles quantum mechanics, molecular dynamics, molecular mechanics, Monte Carlo, and level set method.Keys to successful completion of the project involve (1) leveraging of the PI's ongoing research in first principles calculations of surface chemistries, bulk dynamics, and interfacial interactions and multiscale modeling of surface growth, phase separation, and ultrashallow junction formation, and (2) the strong collaborations the PI has with experimentalists/theorists in material research, who will share their expertise in synthesis/characterization and electronic/optical property computations of Si-Ge-Insulator nanosytems. Progress from this project will contribute to I) realizing experimental control of the size and dimensionality fo Si/Ge nanostructures on the atomic scale and ii) understanding the relationships between the structure and electronic/optical properties, and will in turn iii) guide the rational design and fabrication of Si-Ge-Insulator nanosystems for future electronic and optoelectronic devices, without slow and costly try-and-modify fabrication cycles. The fundamental knowledge and computational techniques/tools from this project will be further applied to understanding the synthesis, manipulation, and characterization of a variety of semiconductor-semiconductor and semiconductor-oxide nanosystems.Broader Impact/Education:The planned educational activities include (1) curriculum development to help chemical engineering students to learn processing concepts with a solid grasp of the underlying physics and chemistry so that they can play a vital role in emerging nanotechnology-based electronic, chemical and related industries, and (2) outreach to promote further involvement of women and underrepresented minorities in forefront research areas and raise the level of community interest in science and technology.The PI takes part in the National Mathematics Competition (NMC) for Korean-American students in grades 4-11, and plans to organize a tutorial to introduce to the NMC participants a variety of emerging technologies. The event has succeeded in stimulating students' interests in mathematics and careers in the fields of science and engineering.
研究:这个职业项目旨在为硅-锗(Si-Ge)绝缘体纳米系统的合成、操作和表征发展理论基础,包括i)Si-SiO_2多量子阱,ii)包裹在SiO_2中的Si纳米线,以及iii)嵌在绝缘体中的Si/Ge纳米晶(如SiO_2、SioxNy、High-k)。研究活动将集中在:(1)硅纳米结构氧化的基本机理和硅氧化物界面性质的研究,硅/锗纳米颗粒在绝缘体表面的生长,硅/锗纳米颗粒在绝缘体基质中的形成,硅/锗纳米颗粒在绝缘体中的生长,硅/锗纳米颗粒在绝缘体中的生长,硅/锗纳米颗粒在绝缘体表面的生长,硅/锗纳米颗粒在绝缘体基质中的形成,硅/锗纳米颗粒在绝缘体表面的生长,硅/锗纳米颗粒在绝缘体表面的生长,硅/锗纳米颗粒在绝缘体基质中的形成,硅/锗纳米颗粒在绝缘体表面的生长,硅/锗纳米颗粒在绝缘体表面的生长,硅/锗纳米颗粒在绝缘体基质中的形成,以及(2)通过集成不同时间和长度尺度上的各种最先进的理论技术,包括第一原理量子力学、分子动力学、分子力学、蒙特卡罗和水平集方法,开发能够将纳米结构材料系统的合成和结构与其在不同工艺条件和环境中的性质联系起来的预测性多尺度、多物理模型。成功完成该项目的关键包括(1)利用PI正在进行的表面化学、整体动力学和界面相互作用的第一性原理计算以及表面生长、相分离和超低结形成的多尺度模型的研究,以及(2)PI与材料研究方面的实验学家/理论家的密切合作,他们将分享他们在Si-Ge-绝缘体纳米系统的合成/表征和电子/光学性质计算方面的专业知识。该项目的进展将有助于i)在原子尺度上实现对Si/Ge纳米结构尺寸和维度的实验控制,以及ii)了解结构和电子/光学性质之间的关系,并反过来将反过来指导用于未来电子和光电子器件的Si-Ge-绝缘体纳米系统的合理设计和制造,而不需要缓慢和昂贵的尝试和修改制造周期。这个项目的基本知识和计算技术/工具将进一步应用于理解各种半导体-半导体和半导体-氧化物纳米系统的合成、操作和表征。广泛的影响/教育:计划的教育活动包括:(1)课程开发,帮助化学工程学生学习工艺概念,扎实掌握基本的物理和化学知识,以便他们能够在新兴的以纳米技术为基础的电子、化学和相关行业中发挥重要作用,以及(2)促进妇女和未被充分代表的少数群体进一步参与前沿研究领域和提高社区对科学技术的兴趣的外联活动。国际数学联合会参加了面向4-11年级韩裔美国学生的全国数学竞赛(NMC),并计划组织一次辅导,向NMC参与者介绍各种新兴技术。该活动成功地激发了学生对数学的兴趣和理工科领域的职业。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Gyeong Hwang其他文献
Effects of Aleurone Layer Extract From Black Rice (Oryza sativa L.) on Bone Mineral Density and Bone-Related Biomarkers of Ovariectomized Rats (FS14-05-19)
- DOI:
10.1093/cdn/nzz038.fs14-05-19 - 发表时间:
2019-06-01 - 期刊:
- 影响因子:
- 作者:
Sung Hyen Lee;Jung-Bong Kim;Hwan Hui Chang;Jeong Sook Choi;Gyeong Hwang;Shin Young Park;Eun-Byeol Lee;Ji-Hye Choi;Young Min Lee;Haeng-Ran Kim;Hae-Jeung Lee;Sung-Joon Lee - 通讯作者:
Sung-Joon Lee
Gyeong Hwang的其他文献
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{{ truncateString('Gyeong Hwang', 18)}}的其他基金
Tailoring the Surface Reactivity of Amorphous Silica Materials through First Principles-based Atomistic Modeling
通过基于第一原理的原子建模定制无定形二氧化硅材料的表面反应性
- 批准号:
0933557 - 财政年份:2010
- 资助金额:
$ 40万 - 项目类别:
Standard Grant
SGER: Exploratory Theoretical Study of Differential Surface Charging of Nanopatterned Dielectric Materials
SGER:纳米图案介电材料差异表面充电的探索性理论研究
- 批准号:
0650536 - 财政年份:2006
- 资助金额:
$ 40万 - 项目类别:
Standard Grant
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