Device Physics of Nanoscale Electronic Devices beyond the Technology Roadmap

超越技术路线图的纳米级电子器件的器件物理

• 批准号: 0501096
• 负责人: H S Philip Wong
• 金额: $ 24万
• 依托单位: Stanford University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2005
• 资助国家: 美国
• 起止时间: 2005-05-01 至 2009-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0501096&HistoricalAwards=false
• 关键词: Device; Physics; Nanoscale; Electronic; Devices

The objective of this research is to study the fundamental physics that is essential to both the success of introducing new materials for conventional FETs and the assessment of proposed novel tunneling-based devices. The approach is to gather experimental data of band-to-band tunneling with extremely steep doping profiles appropriate to future nanoscale devices. Band-to-band tunneling in strained silicon, germanium, and semiconductor nanowires will be studied. Numerical models for band-to-band tunneling will be calibrated/verified with the experimental data and subsequently employed to study the device design space and examine the ultimate scaling limits for nanoscale FETs including the effects of off-state leakage. Novel tunneling-based devices with sharp subthreshold turn-off characteristics will be studied. These devices are clearly beyond the present technology roadmap of the semiconductor industry. The goal is to find solutions to reduce the off-state current of active devices. The broader impacts aspects of this program will advance diversity in the nanoelectronics workforce and provide intellectual technology transfer, integration of research and education, public education, and promotion of partnerships. The educational and outreach programs target opportunities in nanoelectronics - an important area to maintain US leadership in a global economy. An integral component of this proposal is public education on nanoscience and nanotechnology. By engaging science journalists in the research program, public understanding of science and technology will be enhanced through improved science reporting in various media. In return, the science journalists will join in educating the future scientist (the students) on effective communication of science concepts to the general public.

本研究的目的是研究基础物理，这是必不可少的成功引入新材料的传统FET和评估提出的新型隧道为基础的设备。该方法是收集实验数据的带到带隧穿与非常陡峭的掺杂配置文件适合未来的纳米器件。应变硅，锗，和半导体纳米线的带到带隧穿将被研究。带到带隧穿的数值模型将被校准/验证的实验数据，并随后用于研究器件设计空间，并检查纳米级FET的最终缩放限制，包括关态泄漏的影响。将研究具有锐亚阈值关断特性的新型隧穿基器件。这些器件显然超出了半导体行业目前的技术路线图。目标是找到降低有源器件关态电流的解决方案。该计划的更广泛影响方面将促进纳米电子劳动力的多样性，并提供知识技术转让，研究和教育的整合，公共教育和促进伙伴关系。教育和推广计划的目标是纳米电子学的机会-这是保持美国在全球经济中领导地位的重要领域。这项建议的一个组成部分是关于纳米科学和纳米技术的公众教育。通过让科学记者参与研究计划，公众对科学和技术的理解将通过改善各种媒体的科学报道而得到加强。作为回报，科学记者将参与教育未来的科学家（学生）如何向公众有效传播科学概念。