GOALI: Development of Block Copolymer Self-assembly for Next Generation Device Fabrication
GOALI:开发用于下一代器件制造的嵌段共聚物自组装
基本信息
- 批准号:1029452
- 负责人:
- 金额:$ 36万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2010
- 资助国家:美国
- 起止时间:2010-08-01 至 2014-07-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Directed block copolymer self-assembly is one of the promising technologies to solve the problems of conventional lithography for advanced semiconductor technologies. In contrast to conventional lithography, block copolymer self-assembly provides sub-20 nm features with lower cost and higher throughput, though defects and precise positioning are fundamental research topics that need to be addressed. The goal of this project is to address these challenges for integrating directed block copolymer self-assembly technology into practical integrated device fabrication process at the circuit level and demonstrate the fabrication of the key features for next generation devices. Block copolymer self-assembly and guided template patterning methods are proposed as a proof of concept demonstration for fabricating ultra-high density memory arrays and sub-20 nm contact holes for high-density silicon circuitry, respectively. The broader impacts of this project cover both fundamental research and commercial manufacturing at the university-industrial interface. This project can have direct impact to promote block copolymer self-assembly technology as an economically efficient extension to conventional lithography for next generation device fabrication, benefiting the semiconductor manufacturing industry and the broader electronics industry greatly. It also will substantially stimulate the study of polymer materials design for better functional performance. As part of a outreach to the broader society, a few video clips will be produced and posted onto public websites to help the students understand the science and technology of the self-assembly. This university-industry collaboration provides an excellent training ground for the participating students in a multidisciplinary environment at the interface of fundamental research and industrial manufacturing.
定向嵌段共聚物自组装技术是解决先进半导体工艺中传统光刻技术存在的问题的一种很有前途的技术。与传统的光刻相比,嵌段共聚物自组装提供了低于20 nm的功能,具有更低的成本和更高的吞吐量,但缺陷和精确定位是需要解决的基本研究课题。该项目的目标是解决这些挑战,将定向嵌段共聚物自组装技术集成到实际的集成器件制造工艺中,在电路层面上,并展示下一代器件的关键功能的制造。提出了嵌段共聚物自组装和引导模板图案化方法,分别作为用于制造超高密度存储器阵列和用于高密度硅电路的亚20 nm接触孔的概念演示的证明。该项目的更广泛影响包括大学-工业界面的基础研究和商业制造。该项目可以直接影响促进嵌段共聚物自组装技术作为下一代器件制造的传统光刻的经济有效的延伸,使半导体制造业和更广泛的电子行业受益匪浅。它也将大大刺激高分子材料设计的研究,以获得更好的功能性能。作为向更广泛社会推广的一部分,将制作一些视频剪辑并发布到公共网站上,以帮助学生了解自组装的科学和技术。这种大学与工业的合作为参与的学生在基础研究和工业制造的界面上的多学科环境中提供了一个很好的培训基地。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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H S Philip Wong其他文献
H S Philip Wong的其他文献
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{{ truncateString('H S Philip Wong', 18)}}的其他基金
SHF: Small: Collaborative Research: Design Automation for Block Copolymer Directed Self-Assembly (DSA) Lithography Patterning
SHF:小型:协作研究:嵌段共聚物定向自组装 (DSA) 光刻图案化的设计自动化
- 批准号:
1421292 - 财政年份:2014
- 资助金额:
$ 36万 - 项目类别:
Standard Grant
Eager: High-Density Electronic Synapse Arrays Using Nanoscale Devices
Eager:使用纳米级器件的高密度电子突触阵列
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0950305 - 财政年份:2009
- 资助金额:
$ 36万 - 项目类别:
Standard Grant
Fabrication of the NEM and NEMFET Logic Gates via Top-Down and Bottom-up Processes
通过自上而下和自下而上工艺制造 NEM 和 NEMFET 逻辑门
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0801334 - 财政年份:2008
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$ 36万 - 项目类别:
Continuing Grant
Device Physics of Nanoscale Electronic Devices beyond the Technology Roadmap
超越技术路线图的纳米级电子器件的器件物理
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0501096 - 财政年份:2005
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$ 36万 - 项目类别:
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