Fabrication of the NEM and NEMFET Logic Gates via Top-Down and Bottom-up Processes

通过自上而下和自下而上工艺制造 NEM 和 NEMFET 逻辑门

• 批准号: 0801334
• 负责人: H S Philip Wong
• 金额: $ 33万
• 依托单位: Stanford University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2008
• 资助国家: 美国
• 起止时间: 2008-06-01 至 2011-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0801334&HistoricalAwards=false
• 关键词: Fabrication; NEM; NEMFET; Logic; Gates

Proposal No. 0801334Fabrication of the NEM and NEMFET Logic Gatesvia Top-Down and Bottom-up ProcessesH.-S. Philip [e-mail] University250 Word Abstract:The objective of this research is to demonstrate for the first-time ultra-low power logic gates based on nanoelectromechanical (NEM) switches and NEM field-effect transistors. The proposed devices will solve the ever aggravating leakage and static power consumption problem of the CMOS technologies. The approach is to pursue simultaneously the lithography-based top-down processes and the nanowire/carbon nanotube-based bottom-up techniques. The proposed research aligns well with the EPDT program which aims at improving the fundamental understanding of devices and components based on the principles of electronics and electromechanics. The intellectual merit resides in the experimental realization of extremely low power ULSI logic systems combining two traditionally distinct domains (MEMS and CMOS logic). Micron-sized MEMS devices will be extended into the nanoscale regime. The ultra-low power operation of the proposed devices follows from the fact that the signal propagation is based not only on the movement of charge but also on the displacement of a solid rod. This distinguishes the NEM relays and the NEMS-based transistors from the conventional MOSFETs. The broader impacts will advance diversity in the nanoelectronics workforce and provide intellectual technology transfer, integration of research and education, public education, minority student outreach, and promotion of partnerships. Specifically, collaboration with the producers of the award-winning Silicon Run Film Series will result in new educational films on MEMS and nanoelectronics. They will serve as a resource to educators teaching in these new fields and assist with the professional development of instructors in supporting disciplines.

提案编号 0801334通过自上而下和自下而上工艺制造 NEM 和 NEMFET 逻辑门H.-S。 Philip [e-mail]斯坦福大学250字摘要：这项研究的目的是首次展示基于纳米机电（NEM）开关和NEM场效应晶体管的超低功耗逻辑门。所提出的器件将解决 CMOS 技术日益严重的泄漏和静态功耗问题。该方法是同时追求基于光刻的自上而下工艺和基于纳米线/碳纳米管的自下而上技术。拟议的研究与 EPDT 计划非常吻合，EPDT 计划旨在提高对基于电子和机电原理的设备和组件的基本理解。其智力优势在于结合两个传统不同领域（MEMS 和 CMOS 逻辑）的极低功耗 ULSI 逻辑系统的实验实现。微米级 MEMS 器件将扩展到纳米级领域。所提出的器件的超低功耗操作源于这样的事实：信号传播不仅基于电荷的移动，而且还基于实心杆的位移。这将 NEM 继电器和基于 NEMS 的晶体管与传统 MOSFET 区分开来。更广泛的影响将促进纳米电子学劳动力的多样性，并提供知识技术转让、研究和教育一体化、公共教育、少数族裔学生外展和促进伙伴关系。具体来说，与屡获殊荣的 Silicon Run 电影系列的制片人合作将制作有关 MEMS 和纳米电子学的新教育电影。它们将成为在这些新领域教学的教育工作者的资源，并协助支持学科的教师的专业发展。