Fabrication of the NEM and NEMFET Logic Gates via Top-Down and Bottom-up Processes
Fabrication of the NEM and NEMFET Logic Gates via Top-Down and Bottom-up Processes
批准号:
0801334
负责人:
H S Philip Wong
金额:
$33.0万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2008
资助国家:
美国
项目状态:
已结题
起止时间:
2008-06-01 至 2011-08-31
中文摘要
方案No. 0801334 NEM和NEMFET逻辑门的自顶向下和自底向上制造Philip Wonghspwong@stanford.eduStanford University250字摘要:本研究的目的是首次展示基于纳米机电(NEM)开关和NEM场效应晶体管的超低功耗逻辑门。所提出的器件将解决CMOS技术日益严重的漏电和静态功耗问题。该方法是同时追求基于光刻的自上而下的工艺和基于纳米线/碳纳米管的自下而上的技术。拟议的研究与EPDT计划非常一致,该计划旨在提高基于电子学和机电原理的设备和组件的基本理解。智能优点在于超低功耗ULSI逻辑系统的实验实现结合了两个传统上不同的领域(MEMS和CMOS逻辑)。微米级的MEMS器件将扩展到纳米级。所提出的器件的超低功耗运行源于这样一个事实,即信号传播不仅基于电荷的运动,而且基于固体棒的位移。这将NEM继电器和基于NEM的晶体管与传统的mosfet区分开来。更广泛的影响将促进纳米电子劳动力的多样性,提供智力技术转移、研究和教育的整合、公共教育、少数民族学生的推广和促进伙伴关系。具体而言,与屡获殊荣的Silicon Run Film系列的制片人合作将产生关于MEMS和纳米电子学的新教育片。它们将作为教育工作者在这些新领域教学的资源,并协助辅助学科教员的专业发展。
英文摘要
Proposal No. 0801334Fabrication of the NEM and NEMFET Logic Gatesvia Top-Down and Bottom-up ProcessesH.-S. Philip Wonghspwong@stanford.eduStanford University250 Word Abstract:The objective of this research is to demonstrate for the first-time ultra-low power logic gates based on nanoelectromechanical (NEM) switches and NEM field-effect transistors. The proposed devices will solve the ever aggravating leakage and static power consumption problem of the CMOS technologies. The approach is to pursue simultaneously the lithography-based top-down processes and the nanowire/carbon nanotube-based bottom-up techniques. The proposed research aligns well with the EPDT program which aims at improving the fundamental understanding of devices and components based on the principles of electronics and electromechanics. The intellectual merit resides in the experimental realization of extremely low power ULSI logic systems combining two traditionally distinct domains (MEMS and CMOS logic). Micron-sized MEMS devices will be extended into the nanoscale regime. The ultra-low power operation of the proposed devices follows from the fact that the signal propagation is based not only on the movement of charge but also on the displacement of a solid rod. This distinguishes the NEM relays and the NEMS-based transistors from the conventional MOSFETs. The broader impacts will advance diversity in the nanoelectronics workforce and provide intellectual technology transfer, integration of research and education, public education, minority student outreach, and promotion of partnerships. Specifically, collaboration with the producers of the award-winning Silicon Run Film Series will result in new educational films on MEMS and nanoelectronics. They will serve as a resource to educators teaching in these new fields and assist with the professional development of instructors in supporting disciplines.
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