MRI: Acquisition of Instrumentation for the Production and Characterization of Epitaxial Graphite on Silicon Carbide

MRI：购置用于碳化硅上外延石墨的生产和表征的仪器

• 批准号: 0521041
• 负责人: Walter De Heer
• 金额: --
• 依托单位: Georgia Tech Research Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2005
• 资助国家: 美国
• 起止时间: 2005-08-15 至 2008-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0521041&HistoricalAwards=false
• 关键词: MRI; Acquisition; Instrumentation; Production; Characterization

This award is for the acquisition of instrumentation for the production and characterization of ultrathin films of epitaxial graphite (EG, "epitaxial graphene"). This material is essential for the nanopatterned epitaxial graphene (NPEG) project, led by researchers at the Georgia Institute of Technology (GIT). The NPEG project is a multidisciplinary research program to explore the properties of EG and NPEG grown on chips of single crystal SiC. Unlike nanotubes, seamlessly-interconnected, functional NPEG devices could be fabricated via rational patterning of a planar EG substrate, obviating the need for metal interconnects on the wafer. Thus, the NPEG approach to graphitic nanoelectronics could remove many of the obstacles faced by carbon nanotubes, while retaining the benefits of high carrier mobility and quasi-1D transport.Active outreach programs involved in the NPEG project - and facilitated by the instrumentation - include the Georgia Intern-Fellowships for Teachers program (K-12 teachers) and the GIT College of Sciences Faculty Development Program (faculty from non-research institutions, with typically high proportions of underrepresented groups). The program also will involve undergraduate students through the NSF-REU program, including a faculty-directed undergraduate research program at the State University of West Georgia. Also, through participation in the GIT NanoScience and Technology (NaST) certificate program, PIs and participating faculty will inject recent research results directly into specialized graduate and undergraduate courses.

该奖项用于收购用于外延石墨（EG，“外延石墨烯”）超薄膜的生产和表征的仪器。这种材料对于乔治亚理工学院 (GIT) 研究人员领导的纳米图案外延石墨烯 (NPEG) 项目至关重要。 NPCE 项目是一个多学科研究项目，旨在探索在单晶 SiC 芯片上生长的 EG 和 NPCE 的特性。与纳米管不同，无缝互连的功能性 NPEG 器件可以通过平面 EG 基板的合理图案化来制造，从而无需在晶圆上使用金属互连。因此，NPEG 石墨纳米电子学方法可以消除碳纳米管面临的许多障碍，同时保留高载流子迁移率和准一维传输的优点。 NPEG 项目中涉及的积极外展计划（并由仪器推动）包括佐治亚州实习教师奖学金计划（K-12 教师）和 GIT 科学学院教师发展计划 （来自非研究机构的教师，代表性不足的群体比例通常很高）。该项目还将通过 NSF-REU 项目让本科生参与其中，其中包括西乔治亚州立大学教师指导的本科生研究项目。此外，通过参与 GIT 纳米科学与技术 (NaST) 证书项目，PI 和参与的教师将把最新的研究成果直接注入专门的研究生和本科生课程中。