NIRT: Electronic Devices from Nano-patterned Epitaxial Graphite

NIRT：纳米图案外延石墨电子设备

• 批准号: 0404084
• 负责人: Walter De Heer
• 金额: $ 130万
• 依托单位: Georgia Tech Research Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2004
• 资助国家: 美国
• 起止时间: 2004-08-01 至 2009-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0404084&HistoricalAwards=false
• 关键词: NIRT; Electronic; Devices; Nano; patterned

The objective of this research is to establish the potential of nano-patterned ultrathin epitaxial graphite for low-power, nanometer-scale electronic devices. The research is inspired by the exceptional electronic properties of carbon nanotubes, and the realization that these essential properties are shared by all nanographitic structures. Rationally patterned planar graphite (or graphene - a single atomic layer of graphite) structures have advantages over nanotubes in that connections between devices can be accomplished in a single lithographic step. The research approach is to 1) Produce extended defect-free multilayered graphene, 0.3--3 nm thick, on silicon carbide substrates; 2) Develop patterning methods; 3) Establish electronic and transport properties of extended films and defined structures; 4) Develop chemical modification (doping) methods; 5) Demonstrate simple devices; and 6) Establish methods to integrate with Si-based electronics. Energy conservation and mobile operation demand that future electronics focus on low power and high-density. Graphite-based electronics holds the potential for large-scale integration of ballistic (dissipationless) devices that could satisfy these needs. This program provides in-depth training for Ph.D. students in nanoscience/engineering, and research/education opportunities at several levels. Through Georgia Tech programs designed by education professionals, high-school teachers can be hosted in research laboratories. U.S. undergraduates can participate in the research through two NSF-REU programs (with additional opportunities available in Georgia). Contributions to courses within Georgia Tech's Nanoscience and Technology program will reach a wider audience. Finally, a focus on recruitment of underrepresented groups into nanoscience and engineering will be maintained.

这项研究的目的是确定纳米图形超薄外延石墨在低功率、纳米级电子设备中的潜力。这项研究的灵感来自于碳纳米管的特殊电子性质，以及意识到所有纳米结构都共享这些基本性质。与纳米管相比，合理图案化的平面石墨(或称石墨烯--石墨的单个原子层)结构具有优势，因为设备之间的连接可以在单一的光刻步骤中完成。研究方法是1)在碳化硅衬底上生产厚度为0.3-3 nm的无缺陷扩展多层石墨烯；2)开发图案化方法；3)建立扩展薄膜和特定结构的电子和传输性质；4)开发化学修饰(掺杂)方法；5)展示简单的器件；以及6)建立与硅基电子学集成的方法。节能和移动运营要求未来的电子产品向低功耗、高密度方向发展。基于石墨的电子学具有大规模集成弹道(无耗散)设备的潜力，可以满足这些需求。该项目为博士生提供纳米科学/工程学方面的深入培训，并提供多个层次的研究/教育机会。通过由教育专业人士设计的佐治亚理工学院项目，高中教师可以被安置在研究实验室。美国本科生可以通过两个NSF-REU项目参与研究(佐治亚州还有其他机会)。佐治亚理工学院纳米科学和技术计划中的课程贡献将惠及更广泛的受众。最后，将继续把重点放在招募人数不足的群体进入纳米科学和工程领域。