STTR Phase I: Ultrafast Response Transient Voltage Surge Suppressors

该小型企业技术转让(STTR)第一阶段项目支持开发超快(1 Ns)响应的暂态电压浪涌抑制(TVSS)设备，以保护电力基础设施。利用原子层沉积(ALD)技术在纳米级镍粉(约50-150微米)表面涂覆氧化铝(10、7.5、5、2.5和1.5 nm厚的氧化铝涂层)，可获得金属表面由原子尺寸量级的绝缘间隙隔开的新型金属绝缘压敏电阻(MIV)颗粒。这些新颖的MIV粒子将被嵌入同轴原型装置中，并在推力制度电压高达20千伏的情况下进行脉冲测试。粒子-ALDTM纳米涂层工艺将扩大规模，并将生产1公斤粉末，为合作伙伴的设备提供样品。在美国，高压浪涌造成的损失每年超过260亿美元。高电压浪涌由静电放电、高功率微波、电力线开关瞬变、雷击以及潜在的电磁脉冲引起。处理电过应力的一种可能的方法是通过这里提出的量子隧道MIV的发展。其他可能受益于这种功能化微粉的设备市场包括微电子、国防、医疗、消费品和复合材料等。

This Small Business Technology Transfer (STTR) Phase I project supports the development of ultra-fast ( 1 ns) response Transient Voltage Surge Suppression (TVSS) devices to protect the power infrastructure. Fine nickel particle (~ 50-150 micrometer) samples will be nano-coated by Atomic Layer Deposition (ALD) with alumina (Al2O3) (10, 7.5, 5, 2.5, and 1.5 nm thick Al2O3 coating), providing novel Metal Insulating Varistor (MIV) particles having metallic surfaces separated by insulative gaps on the order of atomic dimensions. These novel MIV particles will be embedded in coaxial prototype devices and pulse tested with thrust regime voltages up to of 20 kV. The Particle-ALDTM nano-coating process will be scaled-up and 1 kg of powder will be produced to provide samples for partner's devices. The losses in the US to high voltage surges exceed $26 billion annually. High voltage surges result from electrostatic discharges, high power microwaves, power line switching transients, lightning strikes, and potentially EMP. One possible method for handling the electrical overstresses is through the development of quantum tunneling MIVs as proposed here. Other device markets that could benefit from such functionalized fine powders include microelectronics, defense, medical, consumer products, and composite materials, among others.