Writing graphene: Ion-beam modification of thin polymer layers

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We propose a radically new method of graphene growth. In contrast to exfoliation or surface layer reactions we will realize a horizontal graphene growth. Polymers or other carbon containing precursors will be converted into a graphene layer by ion irradiation in a specially developed scanning mode. In analogy with a zone melting process, the ion beam will move gradually along the precursor film initiating graphene growth at the beam border. By improving our scanning irradiation technique we plan to achieve a sharpness of the beam edge of the order of 1 nm. This value is comparable with the lateral size of a collision cascade in the graphitized layer as well as the size of graphene flakes. We expect that this procedure can provide large-area graphene films on arbitrary substrates. Raman spectroscopy, AFM, STM in ambient conditions and in UHV, SEM and TEM will be performed in order to investigate the process of graphene growth. Furthermore, the films will be characterized by measurements of their transport properties including influence of electric and magnetic fields, like Hall effect, etc. Several materials and deposition processes will be applied in order to obtain smooth, nanometer thick precursor layers. By using substrates, which assist graphene growth (Cu, Ni, Co etc.) we hope to achieve a significant reduction of the process temperatures by scanning ion irradiation, and expect interesting transport properties of the grown films.