Perspective of low energy ion beam implantation for doping of graphene

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Within this project, we will explore the perspectives of ion beam implantation for controlled doping of graphene. Our goal is to maximize the degree of doping while minimizing the magnitude of charge carrier scattering by lattice defects. We are aiming to find out whether the benefits of stable substitutional doping, i.e. controlling the degree of doping, compensate the degradation of the mobility of charge carriers due to additional scattering processes. More specific, we will explore the limit of low energy ion beam implantation by optimizing the preparation process as well as by searching for alternative dopant species. Samples will be characterized by different experimental techniques, especially room and low temperature scanning tunneling microscopy and spectroscopy to analyze defects on the atomic scale as well as Kelvin probe force microscopy to determine transport parameters on a microscopic scale. Finally, these results are used to explore both the possibility of high doping concentration and to create laterally structured doping.