Perspective of low energy ion beam implantation for doping of graphene

低能离子束注入石墨烯掺杂的前景

• 批准号: 421708041
• 负责人: Professor Dr. Hans Christian Hofsäss
• 金额: --
• 依托单位: II. Physikalisches Institut - Atom- und Kernphysik
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2019
• 资助国家: 德国
• 起止时间: 2018-12-31 至 2021-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/421708041?language=en
• 关键词: Perspective; low; energy; ion; beam

Within this project, we will explore the perspectives of ion beam implantation for controlled doping of graphene. Our goal is to maximize the degree of doping while minimizing the magnitude of charge carrier scattering by lattice defects. We are aiming to find out whether the benefits of stable substitutional doping, i.e. controlling the degree of doping, compensate the degradation of the mobility of charge carriers due to additional scattering processes. More specific, we will explore the limit of low energy ion beam implantation by optimizing the preparation process as well as by searching for alternative dopant species. Samples will be characterized by different experimental techniques, especially room and low temperature scanning tunneling microscopy and spectroscopy to analyze defects on the atomic scale as well as Kelvin probe force microscopy to determine transport parameters on a microscopic scale. Finally, these results are used to explore both the possibility of high doping concentration and to create laterally structured doping.

在这个项目中，我们将探索离子束注入控制石墨烯掺杂的前景。我们的目标是最大限度地提高掺杂程度，同时最大限度地减少晶格缺陷造成的载流子散射程度。我们的目标是找出稳定替代掺杂（即控制掺杂程度）的好处是否可以补偿由于额外的散射过程而导致的载流子迁移率的下降。更具体地说，我们将通过优化制备工艺以及寻找替代掺杂剂种类来探索低能离子束注入的极限。样品将通过不同的实验技术进行表征，特别是室温和低温扫描隧道显微镜和光谱学，以分析原子尺度的缺陷，以及开尔文探针力显微镜，以确定微观尺度的传输参数。最后，这些结果用于探索高掺杂浓度和产生横向结构掺杂的可能性。