U.S.-Sri Lanka Workshop and Exchange Visits: Quantum Well Infrared Photo Detector 2006 (QWIP 2006), June 2006, Kandy, Sri Lanka

美国-斯里兰卡研讨会和交流访问:量子阱红外光电探测器 2006 (QWIP 2006),2006 年 6 月,斯里兰卡康提

基本信息

项目摘要

0543257PereraThis project supports a U.S.- Sri Lanka Workshop: Quantum Well Infrared Photo Detector 2006 (QWIP 2006), June 2006, Kandy, Sri Lanka. The US organizers are Dr. Unil Perera, Department of Physics and Astronomy, Georgia State University (GSU), Athens and Dr. Kirti Tennakone, Director, Institute of Fundamental Studies (IFS), Kandy, Sri Lanka.This workshop is planned to encourage students, post-doctoral associates, and senior researchers to engage in scientific discussions related to developing infrared detectors. The focus will be on intersubband transitions, specifically quantum well (QWIP) and quantum dot infrared photodetector (QDIP) structures. A second aim is to encourage scientists and students from the south Asian region to be involved in these novel developments. This would initiate new collaborations and enhance ongoing collaborations there by providing a better prepared graduate student pool for the US higher education institutions. Following rapid developments in the past 15 years, QWIP has become a technology for infrared imaging. Despite this rapid advance, some areas are not yet completely resolved and potentials are not fully exploited. Several world experts in the QWIP/QDIP research & development, government sponsors, industrial engineers, instrument technologists and end users will meet to discuss the current issues, formulate future directions, and propose collaborations. This effort could resolve some basic scientific issues not yet addressed such as low background operation and also could lead to the development of new types of nanostructure sensors. New materials form another focal point including quantum dots (e.g., QDIPs) and novel materials systems (e.g., Indium Arsenate/Gallium Antimonide/Aluminum Antimonide (InAs/GaSb/AlSb), Gallium Indium Nitride (InGaN) Quantum Wells (QWs), and dilute nitride InGaNAs QWs) will also be discussed.Since QWIP technology is a critical emerging technology that can impact on the US strengths in infrared detection, this workshop is designed to keep the U.S. scientists abreast of its latest developments around the globe. This project will support participation by 3 junior scientists, 12 graduate students and 2 undergraduate students, all in U.S. institutions. Nano-structures and novel materials are of widespread interest to the solid-state physics and engineering community, with possibility for the development of new advanced materials. Recent advances in terahertz detection using quantum well and dot structures would be another area of interest. The workshop will generate communications, mutual understanding and collaborations between U.S. scientists and students and those in foreign countries, especially within the Asian region. In addition the QWIP device knowledge among US students and young scientists will also be broadened especially among minority and women. This training of the next generation of high technology workforce will be critical in maintaining US strengths in novel nanotechnology focus areas. Current GSU-IFS collaborations will be extended to the QWIP device area and support will be provided for exchange visits between the two research laboratories.
0543257 Perera该项目支持美国-斯里兰卡讲习班:2006年量子阱红外照相探测器(2006年第一季度),2006年6月,斯里兰卡康提。 美国的组织者是雅典格鲁吉亚州立大学(GSU)物理和天文学系的Unil Perera博士和斯里兰卡康提基础研究所(IFS)所长Kirti Tennakone博士。 重点将放在子带间跃迁上,特别是量子阱(QDLs)和量子点红外光电探测器(QDIP)结构。第二个目标是鼓励南亚地区的科学家和学生参与这些新的发展。这将启动新的合作,并通过为美国高等教育机构提供更好的准备研究生人才库来加强正在进行的合作。在过去15年的快速发展之后,QSAR已经成为一种红外成像技术。尽管取得了迅速进展,但有些领域尚未完全解决,潜力尚未充分开发。 QDIP研究开发领域的多位世界专家、政府赞助商、工业工程师、仪器技术人员和最终用户将会面,讨论当前的问题,制定未来的方向,并提出合作建议。这一努力可以解决一些尚未解决的基本科学问题,如低背景操作,也可能导致新型纳米结构传感器的开发。新材料形成了另一个焦点,包括量子点(例如,QDIP)和新型材料系统(例如,此外,还将讨论砷化铟/锑化镓/锑化铝(InAs/GaSb/AlSb)、氮化铟镓(InGaN)量子威尔斯(QW)和稀氮化物InGaNAs量子阱(QW)。由于量子阱技术是一项关键的新兴技术,可以影响美国在红外探测方面的优势,因此本次研讨会旨在让美国科学家了解地球仪的最新发展。该项目将支持3名初级科学家,12名研究生和2名本科生的参与,他们都在美国机构。 纳米结构和新型材料是固体物理和工程界的广泛兴趣,具有开发新的先进材料的可能性。使用量子阱和点结构的太赫兹探测的最新进展将是另一个感兴趣的领域。 研讨会将促进美国科学家和学生与外国,特别是亚洲地区的科学家和学生之间的沟通,相互理解和合作。 此外,美国学生和年轻科学家对QEMPT设备的了解也将扩大,特别是在少数民族和妇女中。这种对下一代高科技劳动力的培训对于保持美国在新纳米技术重点领域的优势至关重要。目前的GSU-IFS合作将扩展到QEARS设备领域,并将为两个研究实验室之间的互访提供支持。

项目成果

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Unil A. Perera其他文献

Unil A. Perera的其他文献

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{{ truncateString('Unil A. Perera', 18)}}的其他基金

Novel Device Concepts for High Operating Temperature Split-Off Quantum Dot Infra red Photodetectors
高工作温度分离量子点红外光电探测器的新颖器件概念
  • 批准号:
    1232184
  • 财政年份:
    2012
  • 资助金额:
    --
  • 项目类别:
    Standard Grant
Nanostructure based Terahertz Detector Development
基于纳米结构的太赫兹探测器开发
  • 批准号:
    0553051
  • 财政年份:
    2006
  • 资助金额:
    --
  • 项目类别:
    Standard Grant
US-Sri Lanka Cooperative Research: Study of Dye-Sensitized Semiconductor Nanostructures
美国-斯里兰卡合作研究:染料敏化半导体纳米结构研究
  • 批准号:
    0322355
  • 财政年份:
    2003
  • 资助金额:
    --
  • 项目类别:
    Standard Grant
Novel Wavelength Tailorable Heterojunctions For Infrared (IR)Detection
用于红外 (IR) 检测的新型波长可定制异质结
  • 批准号:
    0140434
  • 财政年份:
    2002
  • 资助金额:
    --
  • 项目类别:
    Continuing Grant
Infrared and Device Physics of Quantum Well Structures
量子阱结构的红外和器件物理
  • 批准号:
    9809746
  • 财政年份:
    1998
  • 资助金额:
    --
  • 项目类别:
    Continuing Grant
Student Participation Enhancement In Novel Interdisciplinary Technologies (International Travel Grant to Columbo, Sri Lanka, July 1995)
加强学生对新型跨学科技术的参与(斯里兰卡哥伦坡国际旅行补助金,1995 年 7 月)
  • 批准号:
    9521743
  • 财政年份:
    1995
  • 资助金额:
    --
  • 项目类别:
    Standard Grant
Intraband Processes and New Device Concepts in SemiconductorHomo and Hetero Junctions
半导体同质和异质结中的带内工艺和新器件概念
  • 批准号:
    9412248
  • 财政年份:
    1994
  • 资助金额:
    --
  • 项目类别:
    Continuing Grant
New Device Concepts and Intraband Processes
新设备概念和带内流程
  • 批准号:
    9296238
  • 财政年份:
    1992
  • 资助金额:
    --
  • 项目类别:
    Continuing Grant
New Device Concepts and Intraband Processes
新设备概念和带内流程
  • 批准号:
    9006078
  • 财政年份:
    1991
  • 资助金额:
    --
  • 项目类别:
    Continuing Grant
Intraband Processes and New Device Concepts in Compound Semiconductor Heterostructures
化合物半导体异质结构中的带内工艺和新器件概念
  • 批准号:
    8814664
  • 财政年份:
    1988
  • 资助金额:
    --
  • 项目类别:
    Standard Grant

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