Intraband Processes and New Device Concepts in Compound Semiconductor Heterostructures

该项目涉及半导体器件的带内（而不是带间）工艺研究以及新器件概念的相关研究。这项研究将包括电子和红外测量以及设备物理理论和建模。该研究将致力于提高对硅带内工艺和选择性掺杂A1GaAs/GaAs的理解，以及有助于以下方面发展的概念：(A)用于逻辑、红外数据传输和振荡器应用的超快器件，(B)新型红外探测器和(C)神经网络电子实现的新手段。一些提议的工作是探索性的，而其他方面代表了当前研究的延续。与我们的预测一致，涉及隧道和光激发的带内过程已被发现在电子开关速度和定制红外探测器在特定波长的最佳响应能力方面具有特殊优势。本研究将处理与皮秒开关和异质结构器件的类似频域有关的问题。这项工作将包括对tsuu - esaki隧道的标准处理以及电子-电子相互作用和异质结构界面粗糙度的修正分析。本课程将发展涉及外源硅器件和异质结构非线性效应的红外探测器概念，并研究杂质带界面的影响。

The project involves research on intraband (as opposed to interband) processes in semiconductor devices and related research on new device concepts. The research will include electronic and infrared measurements as well as device physics theory and modeling. The research will be oriented toward improved understanding of intraband process in silicon and selectively doped A1GaAs/GaAs and toward concepts which could contribute to the development of (A) ultrafast devices for logic, infrared data transmission, and oscillator applications, (B) new types of infrared detectors and (C) new means of electronic implementation of neural networks. Some of the proposed work is exploratory while other aspects represent a continuation of current research. In accord with our predictions, intraband processes involving tunneling and photoexcitation have been found to have special advantages in terms of electronic switching speed and the ability to tailor infrared detectors for optimal response at particular wavelengths. The research will deal with issues related to picosecond switching and the analogous frequency domain for heterostructure devices. The work will include analysis of corrections to the standard treatment of Tsu-Esaki tunneling as well as electron-electron interactions and heterostructure interface roughness. Infrared detector concepts involving nonlinear effects in extrinsic silicon devices and heterostructures will be developed and effects at impurity band interfaces will be studied.