New Device Concepts and Intraband Processes

新设备概念和带内流程

• 批准号: 9006078
• 负责人: Unil A. Perera
• 金额: $ 3.77万
• 依托单位: University of Pittsburgh
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1991
• 资助国家: 美国
• 起止时间: 1991-01-01 至 1992-09-15
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9006078&HistoricalAwards=false
• 关键词: New; Device; Concepts; Intraband; Processes

The research will include electronic and infrared measurements as well as device physics theory and modeling. In accord with our predictions, intraband processes involving tunneling and photoexcitation have been found to have special advantages in terms of electronic switching speed and the ability to tailor infrared detector response bands. The proposed research will be oriented toward improved understanding of intraband process in selectively doped A1GaAs/GaAs and silicon devices and toward concepts which could contribute to the development of (A) heterostructure quantum well (superlattice) infrared detectors, (B) ultrafast electronic devices involving quantum well structures and, (C) infrared optoelectronic devices employing abrupt interfaces. Some of the proposed work is exploratory while other aspects represent a continuation of current research. Infrared detector concepts involving abrupt metal-insulator transition impurity band interfaces associated with modulated doping during epitaxial growth will be developed and effects at impurity band interfaces will be studied. The work involves issues related to ultrafast resonant tunneling in heterostructure devices. The work also involves electron-electron exchange interactions, and effects at heterostructure interfaces as well as interfaces in modulation doped, epitaxially grown silicon.

这项研究将包括电子和红外测量以及设备物理理论和建模。与我们的预测一致，涉及隧道和光激发的带内过程已经被发现在电子方面具有特殊的优势开关速度和定制红外探测器响应频段的能力。拟议的研究将着眼于更好地理解选择性掺杂AlGaAs/GaAs和硅器件的带内过程，并朝着概念这将有助于(A)异质结构量子井(超晶格)红外探测器的发展，(B)涉及量子井结构的超快电子器件，以及(C)采用突变界面的红外光电子器件。拟议的一些工作是探索性的，而其他方面代表了当前研究的继续。红外探测器的概念包括与外延生长过程中调制掺杂相关的突然金属-绝缘体转变杂质带界面并研究了杂质带界面的影响。这项工作涉及与异质结构器件中的超快共振隧穿有关的问题。这项工作还涉及电子-电子交换相互作用，以及在异质结构界面以及调制掺杂外延生长的硅中的界面的影响。