New Device Concepts and Intraband Processes

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The research will include electronic and infrared measurements as well as device physics theory and modeling. In accord with our predictions, intraband processes involving tunneling and photoexcitation have been found to have special advantages in terms of electronic switching speed and the ability to tailor infrared detector response bands. The proposed research will be oriented toward improved understanding of intraband process in selectively doped A1GaAs/GaAs and silicon devices and toward concepts which could contribute to the development of (A) heterostructure quantum well (superlattice) infrared detectors, (B) ultrafast electronic devices involving quantum well structures and, (C) infrared optoelectronic devices employing abrupt interfaces. Some of the proposed work is exploratory while other aspects represent a continuation of current research. Infrared detector concepts involving abrupt metal-insulator transition impurity band interfaces associated with modulated doping during epitaxial growth will be developed and effects at impurity band interfaces will be studied. The work involves issues related to ultrafast resonant tunneling in heterostructure devices. The work also involves electron-electron exchange interactions, and effects at heterostructure interfaces as well as interfaces in modulation doped, epitaxially grown silicon.