New Device Concepts and Intraband Processes

该研究将包括电子 和红外测量， 器件物理理论和建模。 与我们的预测雅阁， 带内过程， 隧道效应和光激发 被发现有特殊的 电子方面的优势 切换速度和能力， 定制红外探测器响应 乐队. 拟议的研究将 面向改善 了解带内流程 在选择性掺杂的Al GaAs/GaAs中， 硅器件和走向概念 可能有助于 （A）异质结构的发展 量子阱（超晶格）红外 探测器，（B）超快电子 量子阱器件 结构和（C）红外 光电器件， 突变界面 一些 建议的工作是探索性的， 其它方面代表了 继续目前的研究。 红外探测器概念， 突变金属-绝缘体转变 相关杂质带界面 具有调制掺杂， 将发展外延生长 杂质带效应 将研究接口。 的 工作涉及的问题涉及 超快共振隧穿 异质结构器件 工作 还涉及电子-电子 交换的相互作用和影响 在异质结构界面处， 以及调制接口 掺杂的、外延生长的硅。

The research will include electronic and infrared measurements as well as device physics theory and modeling. In accord with our predictions, intraband processes involving tunneling and photoexcitation have been found to have special advantages in terms of electronic switching speed and the ability to tailor infrared detector response bands. The proposed research will be oriented toward improved understanding of intraband process in selectively doped A1GaAs/GaAs and silicon devices and toward concepts which could contribute to the development of (A) heterostructure quantum well (superlattice) infrared detectors, (B) ultrafast electronic devices involving quantum well structures and, (C) infrared optoelectronic devices employing abrupt interfaces. Some of the proposed work is exploratory while other aspects represent a continuation of current research. Infrared detector concepts involving abrupt metal-insulator transition impurity band interfaces associated with modulated doping during epitaxial growth will be developed and effects at impurity band interfaces will be studied. The work involves issues related to ultrafast resonant tunneling in heterostructure devices. The work also involves electron-electron exchange interactions, and effects at heterostructure interfaces as well as interfaces in modulation doped, epitaxially grown silicon.