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Novel Device Concepts for High Operating Temperature Split-Off Quantum Dot Infra red Photodetectors

Novel Device Concepts for High Operating Temperature Split-Off Quantum Dot Infra red Photodetectors
高工作温度分离量子点红外光电探测器的新颖器件概念
批准号:
1232184
负责人:
Unil A. Perera
金额:
$36.31万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2012
资助国家:
美国
项目状态:
已结题
起止时间:
2012-08-01 至 2018-07-31

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中文摘要
翻译
本研究的目的是研究分离量子点的新器件概念,并开发高性能的光探测器,响应到太赫兹范围。分离跃迁的独特集成允许量子点中真正的束缚到束缚跃迁,多色操作和定制光谱响应,同时具有载波的三维限制优势。方法是研究包含量子点和阱中的点的光伏结构。最终目标是开发出在高温下工作的具有高探测性和灵敏度的分离量子点光电探测器。智力上的优点是开发了一种新的光电器件技术。提出的分离量子点的新概念解决了目前与常规量子点光电探测器相关的局限性,产生了更高的性能。分离量子点覆盖了从可见光到红外的整个范围,也可以成为一种理想的光伏材料,可以充分吸收到达地球的太阳能。因此,该项目将推动光电器件领域的发展,并创新可再生能源领域。更广泛的影响是量子点半导体研究的新器件概念,它不仅可以大大提高探测器技术,而且可以彻底改变太阳能转换研究。教育和推广工作将提供高素质的博士后,研究生,本科生和K-12教师(P-16),由NSF REU/RET补充支持,在基础研究和最先进的技术领域。在高温下工作的高灵敏度探测器将在军事/国防,工业和民用事业中有广泛的应用,创造了重大的潜在经济优势。
英文摘要
The objective of this research is to study novel device concepts in split-off quantum dots and to develop high performance photodetectors responding up to the terahertz range. The unique integration of split-off transitions allows genuine bound-to-bound transitions in quantum dots, multi-color operation and tailoring spectral response, while having the advantage of three-spatial confinement for carriers. The approaches are to investigate photovoltaic structures containing quantum dots and dots in wells. The ultimate goal is to develop split-off quantum dot photodetectors operating at elevated temperatures with high detectivity and sensitivity. The intellectual merit is to develop a novel technology for optoelectronic devices. The proposed novel concept of split-off quantum dots addresses limitations presently associated with regular quantum dot photodetectors, yielding higher performance. Covering the entire range from visible to infrared, split-off quantum dots can also be an ideal photovoltaic material for fully absorbing solar energy reaching the Earth. Hence, this project should advance the optoelectronic device field and innovate the renewable energy arena. The broader impacts are the new device concepts for quantum dot semiconductor research which could not only drastically improve detector technology but also revolutionize the solar energy conversion research. The education and outreach efforts will provide highly competent post-doctoral, graduate, undergraduate students and K-12 teachers (P-16) supported by NSF REU/RET supplements in both fundamental research and the state-of-the-art technological area. Highly sensitive detectors operating at high temperatures will have a vast range of applications in military/defense, industrial, and civilian endeavors, creating major potential economic advantages.
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会议论文
Nanostructure based Terahertz Detector Development
U.S.-Sri Lanka Workshop and Exchange Visits: Quantum Well Infrared Photo Detector 2006 (QWIP 2006), June 2006, Kandy, Sri Lanka
US-Sri Lanka Cooperative Research: Study of Dye-Sensitized Semiconductor Nanostructures
Novel Wavelength Tailorable Heterojunctions For Infrared (IR)Detection
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