Novel Device Concepts for High Operating Temperature Split-Off Quantum Dot Infra red Photodetectors
高工作温度分离量子点红外光电探测器的新颖器件概念
基本信息
- 批准号:1232184
- 负责人:
- 金额:$ 36.31万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2012
- 资助国家:美国
- 起止时间:2012-08-01 至 2018-07-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The objective of this research is to study novel device concepts in split-off quantum dots and to develop high performance photodetectors responding up to the terahertz range. The unique integration of split-off transitions allows genuine bound-to-bound transitions in quantum dots, multi-color operation and tailoring spectral response, while having the advantage of three-spatial confinement for carriers. The approaches are to investigate photovoltaic structures containing quantum dots and dots in wells. The ultimate goal is to develop split-off quantum dot photodetectors operating at elevated temperatures with high detectivity and sensitivity. The intellectual merit is to develop a novel technology for optoelectronic devices. The proposed novel concept of split-off quantum dots addresses limitations presently associated with regular quantum dot photodetectors, yielding higher performance. Covering the entire range from visible to infrared, split-off quantum dots can also be an ideal photovoltaic material for fully absorbing solar energy reaching the Earth. Hence, this project should advance the optoelectronic device field and innovate the renewable energy arena. The broader impacts are the new device concepts for quantum dot semiconductor research which could not only drastically improve detector technology but also revolutionize the solar energy conversion research. The education and outreach efforts will provide highly competent post-doctoral, graduate, undergraduate students and K-12 teachers (P-16) supported by NSF REU/RET supplements in both fundamental research and the state-of-the-art technological area. Highly sensitive detectors operating at high temperatures will have a vast range of applications in military/defense, industrial, and civilian endeavors, creating major potential economic advantages.
本研究的目的是研究分离量子点中的新器件概念,并开发响应太赫兹范围的高性能光电探测器。分离跃迁的独特集成允许量子点中真正的束缚到束缚跃迁、多色操作和定制光谱响应,同时具有载流子的三空间限制的优点。这些方法是研究含有量子点和量子点在威尔斯中的光伏结构。最终目标是开发出在高温下工作的具有高探测率和灵敏度的分裂量子点光电探测器。其智力价值在于为光电器件开发了一种新技术。所提出的分离量子点的新概念解决了目前与常规量子点光电探测器相关的限制,从而产生更高的性能。覆盖从可见光到红外线的整个范围,分裂的量子点也可以是一种理想的光伏材料,用于完全吸收到达地球的太阳能。因此,该项目将推动光电器件领域的发展,并创新可再生能源竞技场。 更广泛的影响是量子点半导体研究的新器件概念,这不仅可以大大改善探测器技术,而且可以彻底改变太阳能转换研究。教育和推广工作将提供高素质的博士后,研究生,本科生和K-12教师(P-16),由NSF REU/RET补充支持基础研究和最先进的技术领域。在高温下工作的高灵敏度探测器将在军事/国防、工业和民用领域有广泛的应用,创造重大的潜在经济优势。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Unil A. Perera其他文献
Unil A. Perera的其他文献
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{{ truncateString('Unil A. Perera', 18)}}的其他基金
Nanostructure based Terahertz Detector Development
基于纳米结构的太赫兹探测器开发
- 批准号:
0553051 - 财政年份:2006
- 资助金额:
$ 36.31万 - 项目类别:
Standard Grant
U.S.-Sri Lanka Workshop and Exchange Visits: Quantum Well Infrared Photo Detector 2006 (QWIP 2006), June 2006, Kandy, Sri Lanka
美国-斯里兰卡研讨会和交流访问:量子阱红外光电探测器 2006 (QWIP 2006),2006 年 6 月,斯里兰卡康提
- 批准号:
0543257 - 财政年份:2005
- 资助金额:
$ 36.31万 - 项目类别:
Standard Grant
US-Sri Lanka Cooperative Research: Study of Dye-Sensitized Semiconductor Nanostructures
美国-斯里兰卡合作研究:染料敏化半导体纳米结构研究
- 批准号:
0322355 - 财政年份:2003
- 资助金额:
$ 36.31万 - 项目类别:
Standard Grant
Novel Wavelength Tailorable Heterojunctions For Infrared (IR)Detection
用于红外 (IR) 检测的新型波长可定制异质结
- 批准号:
0140434 - 财政年份:2002
- 资助金额:
$ 36.31万 - 项目类别:
Continuing Grant
Infrared and Device Physics of Quantum Well Structures
量子阱结构的红外和器件物理
- 批准号:
9809746 - 财政年份:1998
- 资助金额:
$ 36.31万 - 项目类别:
Continuing Grant
Student Participation Enhancement In Novel Interdisciplinary Technologies (International Travel Grant to Columbo, Sri Lanka, July 1995)
加强学生对新型跨学科技术的参与(斯里兰卡哥伦坡国际旅行补助金,1995 年 7 月)
- 批准号:
9521743 - 财政年份:1995
- 资助金额:
$ 36.31万 - 项目类别:
Standard Grant
Intraband Processes and New Device Concepts in SemiconductorHomo and Hetero Junctions
半导体同质和异质结中的带内工艺和新器件概念
- 批准号:
9412248 - 财政年份:1994
- 资助金额:
$ 36.31万 - 项目类别:
Continuing Grant
New Device Concepts and Intraband Processes
新设备概念和带内流程
- 批准号:
9296238 - 财政年份:1992
- 资助金额:
$ 36.31万 - 项目类别:
Continuing Grant
New Device Concepts and Intraband Processes
新设备概念和带内流程
- 批准号:
9006078 - 财政年份:1991
- 资助金额:
$ 36.31万 - 项目类别:
Continuing Grant
Intraband Processes and New Device Concepts in Compound Semiconductor Heterostructures
化合物半导体异质结构中的带内工艺和新器件概念
- 批准号:
8814664 - 财政年份:1988
- 资助金额:
$ 36.31万 - 项目类别:
Standard Grant
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