Novel Wavelength Tailorable Heterojunctions For Infrared (IR)Detection

用于红外 (IR) 检测的新型波长可定制异质结

基本信息

项目摘要

The proposed project involves research on Heterojunctions concepts, for developing infrared detectors having potential applications in important areas such as spectroscopy in chemistry and biology, optical communication, plasma diagnostics, medical and biological imaging systems, and astrophysics. In the previous NSF program, emphasis was on QWIP detector formats for IR detection and the improvement of the performance by understanding transient effects. Here the development of tailorable solid state IR detectors for 3-30 um (100-10 THz) range (a technologically important region for a wide range of applications) is proposed. These detectors show better performance (responsivity, efficiency, operating temperature and D*) than the available detectors. Recent breakthroughs in THz generation have started bridging the gap between terahertz frequencies and the frequencies above and below. However, in THz detector development, extreme cooling capabilities are still a requirement as in superconducting hot electron bolometers. In order for the field to develop substantially, both source and detectors should develop at the same pace. The primary goal of this proposal will he to design and characterize detectors based on a novel concept [heterojunction interfacial workfunction internal photoemission (HEIWIP)] and optimize the devices for various frequency (wavelength) ranges. The work will include both experimental and theoretical effort studying the role of device parameters on the performance including doping, barrier parameters, layer thickness, resonance cavity effects and dark current issues. In collaboration with scientists at other universities (Cornell), national laboratories (NRC - Canada and U.S. Army Research Lab) and other institutes (Institute for Physics of Microstructures, Nizhny Novgorod) these problems will be addressed by exploring structures grown by different groups and different methods. Optimized designed features, well-doping profiles, energy-selective barriers, emitter/collector barriers, etc. will be modeled and incorporated.The high national importance of this cutting-edge technology, and the close involvement of highly qualified staff and students at Georgia State with our collaborators will continue to impact significantly on advancing knowledge, and physics and engineering education, making a significant contribution to the nation's science and technology base by supplying the scientific community with leading young scientists. The collaborations will also ensure effective transfer to emerging high-tech applications both in commercial and government laboratories. The results of the proposed research will vastly improve the understanding of detectors and form the basis for the next generation of THz detectors.
拟议的项目涉及异质结概念的研究,以开发在化学和生物光谱学、光通信、等离子体诊断、医学和生物成像系统以及天体物理等重要领域具有潜在应用的红外探测器。在之前的NSF计划中,重点放在用于IR检测的QWIP探测器格式以及通过了解瞬变效应来提高性能。在这里,我们提出了3-30微米(100-10太赫兹)范围(这是一个具有广泛应用的重要技术领域)的可定制固态红外探测器的发展。这些探测器表现出比现有探测器更好的性能(响应度、效率、工作温度和D*)。最近在太赫兹产生方面的突破已经开始弥合太赫兹频率和上下频率之间的差距。然而,在太赫兹探测器的开发中,极端冷却能力仍然是一个要求,就像超导热电子测辐射热计一样。为了使该领域有实质性的发展,源和探测器应该同步发展。这项提议的主要目标是基于一种新的概念[异质结界面功函数内光电发射(HEIWIP)]来设计和表征探测器,并优化器件以适应不同的频率(波长)范围。这项工作将包括实验和理论工作,研究器件参数对性能的影响,包括掺杂、势垒参数、层厚度、谐振腔效应和暗电流问题。与其他大学(康奈尔大学)、国家实验室(NRC-加拿大和美国陆军研究实验室)和其他研究所(下诺夫哥罗德微结构物理研究所)的科学家合作,将通过探索由不同小组和不同方法生长的结构来解决这些问题。优化的设计特征、良好的掺杂轮廓、能量选择屏障、发射器/集电极屏障等将被建模并纳入。这项尖端技术在全国范围内的高度重要性,以及佐治亚州立大学高素质的教职员工和学生与我们的合作者的密切参与,将继续对促进知识以及物理和工程教育产生重大影响,通过向科学界提供领先的年轻科学家,为国家的科学和技术基础做出重大贡献。这些合作还将确保有效地转移到商业和政府实验室中的新兴高科技应用。拟议的研究结果将极大地提高对探测器的理解,并为下一代太赫兹探测器奠定基础。

项目成果

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Unil A. Perera其他文献

Unil A. Perera的其他文献

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{{ truncateString('Unil A. Perera', 18)}}的其他基金

Novel Device Concepts for High Operating Temperature Split-Off Quantum Dot Infra red Photodetectors
高工作温度分离量子点红外光电探测器的新颖器件概念
  • 批准号:
    1232184
  • 财政年份:
    2012
  • 资助金额:
    $ 22.5万
  • 项目类别:
    Standard Grant
Nanostructure based Terahertz Detector Development
基于纳米结构的太赫兹探测器开发
  • 批准号:
    0553051
  • 财政年份:
    2006
  • 资助金额:
    $ 22.5万
  • 项目类别:
    Standard Grant
U.S.-Sri Lanka Workshop and Exchange Visits: Quantum Well Infrared Photo Detector 2006 (QWIP 2006), June 2006, Kandy, Sri Lanka
美国-斯里兰卡研讨会和交流访问:量子阱红外光电探测器 2006 (QWIP 2006),2006 年 6 月,斯里兰卡康提
  • 批准号:
    0543257
  • 财政年份:
    2005
  • 资助金额:
    $ 22.5万
  • 项目类别:
    Standard Grant
US-Sri Lanka Cooperative Research: Study of Dye-Sensitized Semiconductor Nanostructures
美国-斯里兰卡合作研究:染料敏化半导体纳米结构研究
  • 批准号:
    0322355
  • 财政年份:
    2003
  • 资助金额:
    $ 22.5万
  • 项目类别:
    Standard Grant
Infrared and Device Physics of Quantum Well Structures
量子阱结构的红外和器件物理
  • 批准号:
    9809746
  • 财政年份:
    1998
  • 资助金额:
    $ 22.5万
  • 项目类别:
    Continuing Grant
Student Participation Enhancement In Novel Interdisciplinary Technologies (International Travel Grant to Columbo, Sri Lanka, July 1995)
加强学生对新型跨学科技术的参与(斯里兰卡哥伦坡国际旅行补助金,1995 年 7 月)
  • 批准号:
    9521743
  • 财政年份:
    1995
  • 资助金额:
    $ 22.5万
  • 项目类别:
    Standard Grant
Intraband Processes and New Device Concepts in SemiconductorHomo and Hetero Junctions
半导体同质和异质结中的带内工艺和新器件概念
  • 批准号:
    9412248
  • 财政年份:
    1994
  • 资助金额:
    $ 22.5万
  • 项目类别:
    Continuing Grant
New Device Concepts and Intraband Processes
新设备概念和带内流程
  • 批准号:
    9296238
  • 财政年份:
    1992
  • 资助金额:
    $ 22.5万
  • 项目类别:
    Continuing Grant
New Device Concepts and Intraband Processes
新设备概念和带内流程
  • 批准号:
    9006078
  • 财政年份:
    1991
  • 资助金额:
    $ 22.5万
  • 项目类别:
    Continuing Grant
Intraband Processes and New Device Concepts in Compound Semiconductor Heterostructures
化合物半导体异质结构中的带内工艺和新器件概念
  • 批准号:
    8814664
  • 财政年份:
    1988
  • 资助金额:
    $ 22.5万
  • 项目类别:
    Standard Grant

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