Improved Field-Effect Switches using Electron Bunching Mediated by Lattice Distortions

使用晶格畸变介导的电子聚束改进场效应开关

基本信息

  • 批准号:
    0601734
  • 负责人:
  • 金额:
    $ 24万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2006
  • 资助国家:
    美国
  • 起止时间:
    2006-05-01 至 2010-04-30
  • 项目状态:
    已结题

项目摘要

0601734PeumansThe objective of this research is to improve the performance of future very-large-scale-integrated systems by developing molecular-scale transistors that have improved switching (on-off) characteristics. By reducing the static power consumption, large gains in overall power consumption and system performance will be achievable. The approach is to exploit polaronic effects present in engineered molecular materials to cause electrons to bind together, leading to the formation of electron bunches in the molecular channel that behave as charge carriers with several times the elementary charge. Intellectual MeritThe proposed approach uses the novel concept of carrier bunching to improve the performance of field-effect devices. This may result in a revolutionary improvement in performance without requiring a change in circuit design paradigms. Moreover, since the proposed approach is scalable through molecular design, it provides a path toward the very dense and very large integrated circuits of the future. Indeed, lowering the switching power, , while maintaining a high on/off ratio will remain perhaps the most important engineering challenge for the semiconductor industry. Broader ImpactThe proposed program integrates research and education to explore novel, nanoscale electronic devices which employ novel charge-lattice interaction effects. The research will be conducted in close collaboration with industry such that the participating students will be trained to apply advances in nanotechnology for real-world solutions. Public education in nanoscience and nanotechnology is an integral part of the program through engaging public advocates in the research program.
0601734 Peumans本研究的目的是通过开发具有改进的开关(开-关)特性的分子级晶体管来提高未来超大规模集成系统的性能。通过降低静态功耗,可以实现整体功耗和系统性能的大幅提升。该方法是利用工程分子材料中存在的极化子效应,使电子结合在一起,从而在分子通道中形成电子束,这些电子束表现为具有数倍于基本电荷的电荷载流子。该方法采用载流子聚束的新概念来提高场效应器件的性能。这可以导致性能的革命性改进,而不需要改变电路设计范例。此外,由于所提出的方法是可扩展的,通过分子设计,它提供了一条通往未来的非常密集和非常大的集成电路的道路。事实上,降低开关功率,同时保持高的开/关比可能仍然是半导体行业最重要的工程挑战。更广泛的影响拟议计划整合研究和教育,探索新的,纳米级的电子器件,采用新的电荷晶格相互作用的影响。这项研究将与工业界密切合作,使参与的学生将接受培训,以应用纳米技术的进步,为现实世界的解决方案。纳米科学和纳米技术的公共教育是该计划的一个组成部分,通过参与研究计划的公共倡导者。

项目成果

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Peter Peumans其他文献

Peter Peumans的其他文献

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{{ truncateString('Peter Peumans', 18)}}的其他基金

SST: Damage-Tolerant, Stretchable, and Reconfigurable Silicon-based Piezoelectric Sensor Networks For Structural and Medical Diagnostic Imaging
SST:用于结构和医学诊断成像的耐损伤、可拉伸和可重构的硅基压电传感器网络
  • 批准号:
    0529357
  • 财政年份:
    2005
  • 资助金额:
    $ 24万
  • 项目类别:
    Standard Grant
CAREER: Multijunction Organic: Inorganic Composite Solar Cells
职业:多结有机:无机复合太阳能电池
  • 批准号:
    0449417
  • 财政年份:
    2005
  • 资助金额:
    $ 24万
  • 项目类别:
    Standard Grant
NIRT: Ultra-high efficiency metal nanostructure-enhanced organic solar cells
NIRT:超高效率金属纳米结构增强有机太阳能电池
  • 批准号:
    0507301
  • 财政年份:
    2005
  • 资助金额:
    $ 24万
  • 项目类别:
    Standard Grant

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