NIRT: Molecular and Electronic Devices Based on Novel One-Dimensional Nanopore Arrays

NIRT：基于新型一维纳米孔阵列的分子和电子器件

• 批准号: 0609064
• 负责人: Zhi Chen
• 金额: --
• 依托单位: University of Kentucky Research Foundation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2006
• 资助国家: 美国
• 起止时间: 2006-07-15 至 2011-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0609064&HistoricalAwards=false
• 关键词: NIRT; Molecular; Electronic; Devices; Based

This NIRT proposal focuses on development of innovative processes for fabrication of quantum and molecular devices use the novel horizontal 1-D AAO array nanotemplate. The research is divided into four main thrusts. In the first thrust, the PIs will refine the process for improving the 1-D horizontal AAO nanostructure, reduce the pore size of the 1-D nanotemplate down to 1 nm using atomic layer deposition, and grow a 1-D array of carbon nanotubes and nanowires aligned horizontally on the silicon substrate. In the second thrust, the PIs will fabricate single-electron transistor (SET) arrays based on the horizontal 1-D array of nanowires. In the third thrust, they will utilize the horizontal 1-D nanpore array for fabrication of in-wire molecular junction arrays and use the horizontal 1-D array of CNTs for fabrication of nanoscale electrodes to isolate single molecules. In the fourth thrust, they will characterize the horizontal 1-D array of nanopores and individual in-wire nanodevices using conductive AFM. The intellectual merit of the proposed activities is to advance the self-assembled AAO template technique toward high-level and large-scale integration of devices compatible with the mainstream planar process technology. The broader impacts of the proposed work include significant advancement of critical bottom-up self-assembly processes, enhancement of multidisciplinary research, education and training of tomorrows scientists and engineers in nanotechnology. The research proposed here will lay a foundation for high-density and large-scale integration of nanotube and nanowire-based quantum and molecular devices. This unique horizontal 1-D structure will find broad applications in basic understanding of transport of molecules, new fabrication procedures, and practical industrial applications. The proposed education activities will enhance the involvement of graduate students in the multidisciplinary environment and also impact Appalachian communities (economically depressed group) through focused education outreach.

该NIRT提案的重点是开发使用新型水平1-D AAO阵列纳米模板制造量子和分子器件的创新工艺。研究分为四个主要方面。在第一个推力中，PI将改进用于改进一维水平AAO纳米结构的过程，使用原子层沉积将一维纳米模板的孔径减小到1 nm，并在硅衬底上生长水平排列的碳纳米管和纳米线的一维阵列。在第二次突破中，PI将基于水平一维纳米线阵列制造单电子晶体管（SET）阵列。在第三个推力中，他们将利用水平1-D纳米孔阵列来制造线内分子结阵列，并使用水平1-D CNT阵列来制造纳米级电极以隔离单个分子。在第四个推力中，他们将使用导电AFM表征纳米孔的水平1-D阵列和单个线内纳米器件。所提出的活动的智力价值是推进自组装AAO模板技术向高层次和大规模集成的设备兼容的主流平面工艺技术。拟议工作的更广泛的影响包括重大推进关键的自下而上的自组装过程，加强多学科研究，教育和培训未来的科学家和工程师在纳米技术。本文的研究为纳米管和纳米晶基量子和分子器件的高密度和大规模集成奠定了基础。这种独特的水平一维结构将在分子传输的基本理解、新的制造过程和实际工业应用中得到广泛的应用。拟议的教育活动将加强研究生在多学科环境中的参与，并通过有重点的教育推广活动影响阿巴拉契亚社区（经济不景气群体）。