Degradation-free SiC BJT Technology based on Novel Low-Temperature Selective Epitaxial Growth

基于新型低温选择性外延生长的无退化SiC BJT技术

• 批准号: 0622184
• 负责人: Yaroslav Koshka
• 金额: --
• 依托单位: Mississippi State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2006
• 资助国家: 美国
• 起止时间: 2006-09-01 至 2011-02-28
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0622184&HistoricalAwards=false
• 关键词: Degradation; free; SiC; BJT; Technology

The objective of this research is to address the fundamental problems preventing commercialization of the silicon carbide high-power and high-frequency bipolar junction transistor. The approach utilizes a novel low-temperature selective epitaxial growth process (LTSEG). LTSEG offers an opportunity to eliminate the problematic ion implantation and plasma etching processes in device fabrication sequence.Intellectual Merit:The low-temperature growth technique discovered at Mississippi State University enables selective epitaxy and self-aligned device fabrication that had been previously impossible for silicon carbide. The new device technology is capable of eliminating the most detrimental problem of SiC transistor - recombination-enhanced stacking fault generation causing gain degradation. Record-high p-type doping efficiency and elimination of the implantation damage will drastically improve the peripheral base resistance and emitter injection efficiency.Silicon carbide bipolar transistor is eagerly anticipated as a power switch for military and space applications. In addition, the proposed research can facilitate the attempted replacement of Si electronics with silicon carbide in hybrid electric vehicles, which is pushed by the US automotive industry as a strategy for reducing dependence on the foreign oil supply. Aggressive R&D conducted abroad threatens the leadership of the US in silicon carbide field. The proposed development brings strong competitive advantage. Broader Impact:The research is uniquely positioned to contribute to the industrial growth in Mississippi by offering new opportunities for collaboration between the university and a local small business spin-off dedicated to commercialization of SiC technologies. It will be an excellent tool for attracting new students into the graduate programs and creating local employment opportunities.

本研究的目的是解决阻碍碳化硅大功率高频双极结型晶体管商业化的根本问题。该方法利用新型低温选择性外延生长工艺（LTSEG）。LTSEG提供了一个机会，以消除有问题的离子注入和等离子体蚀刻过程中的设备制造sequence.Intellectual优点：低温生长技术发现在密西西比州立大学使选择性外延和自对准器件制造，以前不可能的碳化硅。新的器件技术能够消除SiC晶体管最有害的问题-复合增强堆垛层错产生导致增益下降。高的p型掺杂效率和消除注入损伤将极大地提高外围基极电阻和发射极注入效率，碳化硅双极晶体管作为功率开关在军事和航天领域有着广泛的应用前景。此外，拟议的研究可以促进在混合动力汽车中用碳化硅替代硅电子器件的尝试，这是美国汽车工业作为减少对外国石油供应依赖的战略所推动的。国外的积极研发威胁到美国在碳化硅领域的领导地位。拟议的发展带来了强大的竞争优势。更广泛的影响：该研究具有独特的地位，通过为大学与致力于SiC技术商业化的当地小企业分拆提供新的合作机会，为密西西比的工业增长做出贡献。这将是吸引新生进入研究生课程和创造当地就业机会的绝佳工具。