SBIR Phase I: Advanced Manufacturing of Hybrid Wafers and Devices

这个小型企业创新研究(SBIR)第一阶段项目致力于将碳化硅器件的优势与硅工艺和电路技术的现有优势相结合，形成混合电路，从而实现先进的功率转换系统。处理器处理的几千瓦电力负载会导致高热负载的产生，这些负载必须从设备的有源区转移出去。混合电路将通过将碳化硅功率器件连接到革命性的、高导热的混合衬底上，并在同一芯片上驱动具有硅电路的功率器件来制造，从而使碳化硅器件中产生的热量可以有效地从有源区带走。这种独特的衬底是由从硅片上切下的非常薄的硅膜(~1微米)并连接到碳化硅晶片上的硅-碳化硅混合晶片组成的。正在开发的通用混合电路技术既可以应用于低功率系统(1-30kW)和更高功率系统(30kW到mW系统)，也可以应用于从kHz到GHz的射频系统。建议的平面混合电路可以改进功率转换和逆变器系统，以及可能导致改进计算机处理器的电路。混合晶圆和设备将导致电力系统中对美国电网和基础设施至关重要的电力消耗和废热减少。

This Small Business Innovation Research (SBIR) Phase I project addresses an approach to incorporate the advantages of SiC devices with the incumbent advantages of Si processing and circuit technology to form hybrid circuits which will enable advanced power conversion systems. The multi-kilowatt power loads handled by the processors leads to the generation of high thermal loads which must be be transported away from the active area of the devices. The hybrid circuits will be made by attaching SiC power devices to a revolutionary, highly-thermally-conductive hybrid substrate, and driving the power devices with Si circuits on the same chip so that the heat generated in the SiC devices can be efficiently carried away from the active area. This unique substrate is a Si-on-SiC hybrid wafer comprised of a very thin Si membrane (~1 micron) that has been sliced from a Si wafer and attached to a SiC wafer. The general hybrid circuit technology being developed could be applied to both lower power systems (1-30kW) and higher power systems (30kW to MW systems), as well as RF systems from the kHz to GHz. The proposed planar hybrid circuits can lead to improved power conversion and inverter systems, as well as circuitry that could lead to improved computer processors. The hybrid wafers and devices will lead to decreased power consumption and waste heat in power systems critical to United States electricity grid and infrastructure.