SBIR Phase I: Advanced Manufacturing of Hybrid Wafers and Devices

SBIR 第一阶段：混合晶圆和器件的先进制造

• 批准号: 0638229
• 负责人: Randolph Treece
• 金额: $ 10万
• 依托单位: ASTRALUX, INC.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2007
• 资助国家: 美国
• 起止时间: 2007-01-01 至 2007-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0638229&HistoricalAwards=false
• 关键词: SBIR; Phase; Advanced; Manufacturing; Hybrid

This Small Business Innovation Research (SBIR) Phase I project addresses an approach to incorporate the advantages of SiC devices with the incumbent advantages of Si processing and circuit technology to form hybrid circuits which will enable advanced power conversion systems. The multi-kilowatt power loads handled by the processors leads to the generation of high thermal loads which must be be transported away from the active area of the devices. The hybrid circuits will be made by attaching SiC power devices to a revolutionary, highly-thermally-conductive hybrid substrate, and driving the power devices with Si circuits on the same chip so that the heat generated in the SiC devices can be efficiently carried away from the active area. This unique substrate is a Si-on-SiC hybrid wafer comprised of a very thin Si membrane (~1 micron) that has been sliced from a Si wafer and attached to a SiC wafer. The general hybrid circuit technology being developed could be applied to both lower power systems (1-30kW) and higher power systems (30kW to MW systems), as well as RF systems from the kHz to GHz. The proposed planar hybrid circuits can lead to improved power conversion and inverter systems, as well as circuitry that could lead to improved computer processors. The hybrid wafers and devices will lead to decreased power consumption and waste heat in power systems critical to United States electricity grid and infrastructure.

该小型企业创新研究（SBIR）第一阶段项目提出了一种方法，将SiC器件的优势与Si工艺和电路技术的现有优势相结合，形成混合电路，从而实现先进的功率转换系统。由处理器处理的多千瓦功率负载导致产生高热负载，这些高热负载必须从器件的有源区域传输出去。混合电路将通过将SiC功率器件连接到革命性的高导热混合衬底上，并在同一芯片上驱动具有Si电路的功率器件，以便SiC器件中产生的热量可以有效地从有源区带走。这种独特的衬底是一种Si-on-SiC混合晶片，由非常薄的Si膜（约1微米）组成，该膜从Si晶片上切下并附着在SiC晶片上。正在开发的通用混合电路技术可应用于低功率系统（1- 30 kW）和高功率系统（30 kW至MW系统），以及kHz至GHz的RF系统。所提出的平面混合电路可以导致改进的功率转换和逆变器系统，以及可以导致改进的计算机处理器的电路。这种混合晶圆和器件将减少对美国电网和基础设施至关重要的电力系统的功耗和废热。