SBIR Phase I: Improved X-band T/R Modules for High-Temperature/Power Operation

这个小企业创新研究第一阶段项目将开发一种基于Si-on-SiC的混合衬底，用于x波段电路。这种创新的方法将化合物半导体器件的优势与硅处理和电路技术的现有优势结合起来，形成混合电路，从而实现先进的高频（x波段）放大系统。混合电路将使用高导热的混合衬底制成，因此x波段器件中产生的热量将有效地从有源区域带走。这种独特的杂化衬底是一种Si-on-SiC杂化晶圆，由一层非常薄的Si膜（~1微米）组成，该膜从硅晶圆上切片并附着在SiC晶圆上。与完全分离系统的传统方法相比，将x波段器件与Si信号处理电子器件紧密结合可以降低信号噪声，而混合晶圆的SiC可以将热量从x波段和Si电子器件中吸走，从而提高器件的功率密度，增加单位面积器件的封装密度，或者两者的某种组合。此外，在混合晶圆的硅层中制造的电子产品具有SOI电子产品的所有优点：在高温下工作的能力，抗寄生电流和辐射硬度。正在开发的通用混合电路技术也可以应用于功率转换系统或任何基于SOI的电子设备受到高功率和高温水平的应用。仅2004年一年，全球就生产了大约250万片直径相当于200毫米的SOI晶圆。与传统的SOI相比，混合晶圆提供了优越的热性能，同时保持了SOI相对于大块硅的现有优势。该项目将改进用于军事应用的x波段雷达系统。一个典型的机载x波段雷达天线由一到三千个发射/接收（T/R）模块组成，每个模块都有自己的高频砷化镓放大器，产生大约10w的功率。这使得热管理成为一个关键问题。整体系统尺寸也是军事应用的一个重要问题。考虑到雷达系统使用更多的T/R模块会表现得更好，减小T/R模块尺寸的需求是至关重要的。该项目提出了热管理和减小T/R模块尺寸的可能解决方案。

This Small Business Innovation Research Phase I project will develop a hybrid substrate based, Si-on-SiC, for application to X-band circuitry. This innovative approach incorporates the advantages of compound semiconductor devices with the incumbent advantages of Si processing and circuit technology to form hybrid circuits which will enable advanced high-frequency (X-band) amplification systems. The hybrid circuits will be made using a highly-thermally conductive hybrid substrate, so that the heat generated in the X-band devices will be efficiently carried away from the active area. This unique hybrid substrate is a Si-on-SiC hybrid wafer comprised of a very thin Si membrane (~1 micron) that has been sliced from a Si wafer and attached to a SiC wafer. Incorporating an X-band device in close proximity with Si signal processing electronics reduces signal noise compared to the tradional approach of completely seperated systems, while the SiC of the hybrid wafer wicks heat away from both the X-band and Si electronics, thereby allowing for increased power-density of devices, increased packing density of devices per unit area, or some combination of the two. Furthermore, electronics fabricated in the Si layer of the hybrid wafer have all of the advantages of SOI electronics: the ability to operate at high temperatures, resistance to parasitic currents and radiation hardness.The general hybrid circuit technology being developed could also be applied to power conversion systems or any application where SOI based electronics are subjected to high power and high temperature levels. Approximately 2.5 million 200 mm diameter equivalent SOI wafers were produced worldwide in the year 2004 alone. The hybrid wafers offer superior thermal performance compared to conventional SOI while maintaining the incumbent advantages of SOI over bulk Si. This project will lead to improved X-band radar systems for military applications. A typical airborne x-band radar antenna consists of one to three thousand transmit/receive(T/R) modules, each with its own high frequency GaAs amplifier producing on the order of 10 W of power. This makes heat management a critical issue. Overall system size is also an important issue for military applications. Given that a radar system will perform better with more T/R modules, the need to minimize T/R module size is paramount. This project addresses possible solutions to both heat management and T/R module size reduction.