Nonlinear Spectroscopy of Silicon Nano-Interfaces

硅纳米界面的非线性光谱

基本信息

  • 批准号:
    0706227
  • 负责人:
  • 金额:
    $ 43.07万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Continuing Grant
  • 财政年份:
    2007
  • 资助国家:
    美国
  • 起止时间:
    2007-09-01 至 2012-08-31
  • 项目状态:
    已结题

项目摘要

Technical: This project is to study silicon nanocrystals (NCs) embedded in amorphous oxide materials and step edges at vicinal Si(001) and Si(111) surfaces mainly using nonlinear optical methods, particularly second harmonic generation (SHG) and sum-frequency generation (SFG) spectroscopy. The nonlinear optical spectroscopy is used to probe electronic structures, chemical modifications, and femtosecond dynamics of these materials. The experiments will be extended to a multi-electron-volt spectral range using an optical parametric amplifier to obtain interface state spectra. The research on embedded Si nanocrystals includes a comprehensive study of both radiative and nonradiative optical transitions between nanocrystals' interface states arising from, e.g., Si=O double bonds, Si dangling bonds, the amorphous Si transition region, and strained Si-Si and Si-O bonds, which are crucial for understanding luminescence of nanocrystals. Because composites of spherical silicon nanocrystals possess inversion symmetry, they lack a conventional electric-dipole SHG response, but possess an allowed, optically quadrupolar SHG response that is highly sensitive to interface chemical passivation. In studies of silicon step edges, SHG will be combined with reflectance-anisotropy spectroscopy (RAS), and analyzed with a simplified bond hyperpolarizability model to achieve bond-specific spectra.Non-technical: The project addresses basic research issues in a topical area of materials science with high technological relevance. The research is expected to yield much needed basic understanding on structures and properties of silicon nanocrystal interfaces and steps at crystalline silicon surfaces. The success of the project would help in the future progress of nanocrystal-based light-emitting and flash-memory devices and nanotechnology in general. Through this project, graduate and undergraduate students will receive training in a field of critical importance to U.S. industry and technology. The project also includes education and outreach activities in collaboration with the University of Texas - San Antonio campus, which has very high Hispanics student enrollment.
技术:本项目主要利用非线性光学方法,特别是二次谐波产生(SHG)和和频产生(SFG)光谱,研究嵌入在非晶态氧化物材料和邻近Si(001)和Si(111)表面台阶边缘的纳米硅(NCs)。非线性光学光谱被用来探测这些材料的电子结构、化学修饰和飞秒动力学。实验将扩展到多电子伏光谱范围,使用光学参数放大器来获得界面态光谱。镶嵌硅纳米晶体的研究包括对纳米晶界面态之间辐射和非辐射光学跃迁的综合研究,这些光学跃迁是由Si=O双键、Si悬挂键、非晶态Si过渡区以及应变的Si-Si和Si-O键引起的,这对于理解纳米晶体的发光是至关重要的。由于球形硅纳米晶复合材料具有反转对称性,它们没有传统的电偶极倍频响应,但具有允许的光学四极倍频响应,对界面化学钝化高度敏感。在硅台阶边的研究中,倍频将与反射各向异性光谱(RAS)相结合,并使用简化的键超极化率模型进行分析,以获得键特定的光谱。非技术性:该项目解决了材料科学中具有高度技术相关性的热门领域的基础研究问题。这项研究有望对硅纳米晶界面的结构和性质以及结晶硅表面的台阶产生亟需的基本了解。该项目的成功将有助于未来基于纳米晶体的发光和闪存设备以及整个纳米技术的进步。通过这个项目,研究生和本科生将接受对美国工业和技术至关重要的领域的培训。该项目还包括与德克萨斯大学圣安东尼奥分校合作的教育和外联活动,该分校的拉美裔学生入学率非常高。

项目成果

期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)

数据更新时间:{{ journalArticles.updateTime }}

{{ item.title }}
{{ item.translation_title }}
  • DOI:
    {{ item.doi }}
  • 发表时间:
    {{ item.publish_year }}
  • 期刊:
  • 影响因子:
    {{ item.factor }}
  • 作者:
    {{ item.authors }}
  • 通讯作者:
    {{ item.author }}

数据更新时间:{{ journalArticles.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ monograph.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ sciAawards.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ conferencePapers.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ patent.updateTime }}

Michael Downer其他文献

Michael Downer的其他文献

{{ item.title }}
{{ item.translation_title }}
  • DOI:
    {{ item.doi }}
  • 发表时间:
    {{ item.publish_year }}
  • 期刊:
  • 影响因子:
    {{ item.factor }}
  • 作者:
    {{ item.authors }}
  • 通讯作者:
    {{ item.author }}

{{ truncateString('Michael Downer', 18)}}的其他基金

Optical Visualization of Beam-Driven Plasma Wakefield Accelerators
光束驱动等离子体韦克场加速器的光学可视化
  • 批准号:
    2308921
  • 财政年份:
    2023
  • 资助金额:
    $ 43.07万
  • 项目类别:
    Standard Grant
Optical Visualization of Beam-driven Plasma Wakefield Accelerators
光束驱动等离子体韦克场加速器的光学可视化
  • 批准号:
    2010435
  • 财政年份:
    2020
  • 资助金额:
    $ 43.07万
  • 项目类别:
    Standard Grant
Collaborative Research: Preformed Laser-driven Plasma Waveguides for Multi-GeV Laser-Plasma Electron Acceleration
合作研究:用于多GeV激光等离子体电子加速的预制激光驱动等离子体波导
  • 批准号:
    1734319
  • 财政年份:
    2017
  • 资助金额:
    $ 43.07万
  • 项目类别:
    Standard Grant
Tomographic Visualization of Electron-Beam-Driven Plasma Wakefield Accelerators
电子束驱动等离子体韦克场加速器的断层扫描可视化
  • 批准号:
    1416218
  • 财政年份:
    2014
  • 资助金额:
    $ 43.07万
  • 项目类别:
    Standard Grant
Graduate Student Training through Research on Plasma-Based Accelerators
通过等离子体加速器研究进行研究生培训
  • 批准号:
    1354531
  • 财政年份:
    2014
  • 资助金额:
    $ 43.07万
  • 项目类别:
    Standard Grant
Student Participation at the 15th Advanced Accelerator Concepts Workshop, held in Austin,TX June 10-15, 2012.
学生参加 2012 年 6 月 10 日至 15 日在德克萨斯州奥斯汀举行的第 15 届高级加速器概念研讨会。
  • 批准号:
    1154782
  • 财政年份:
    2012
  • 资助金额:
    $ 43.07万
  • 项目类别:
    Standard Grant
Holographic Imaging of Evolving Laser-Plasma Structures
演化激光等离子体结构的全息成像
  • 批准号:
    1004321
  • 财政年份:
    2010
  • 资助金额:
    $ 43.07万
  • 项目类别:
    Standard Grant
Collaborative Research: Graduate Student Training Through Research on Plasma-Based Accelerators
合作研究:通过等离子体加速器研究培养研究生
  • 批准号:
    0936283
  • 财政年份:
    2009
  • 资助金额:
    $ 43.07万
  • 项目类别:
    Standard Grant
Nonlinear Spectroscopy of Planar and Nano-Crystalline Silicon Interfaces: Experiments for ab initio Theory
平面和纳米晶硅界面的非线性光谱:从头算理论的实验
  • 批准号:
    0207295
  • 财政年份:
    2002
  • 资助金额:
    $ 43.07万
  • 项目类别:
    Standard Grant
US-Russia Cooperative Research: Generation of Tunable, Ultrashort XUV Radiation during Femtosecond Ionization of Gases
美俄合作研究:在气体飞秒电离过程中产生可调谐超短 XUV 辐射
  • 批准号:
    9417558
  • 财政年份:
    1995
  • 资助金额:
    $ 43.07万
  • 项目类别:
    Standard Grant

相似海外基金

Xi-hyper nuclei spectroscopy with thick nuclear targets and silicon strip detectors
具有厚核目标和硅条探测器的 Xi 超核能谱
  • 批准号:
    22H01242
  • 财政年份:
    2022
  • 资助金额:
    $ 43.07万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Electronic spectroscopy of astrophysically important silicon-bearing molecules
天体物理上重要的含硅分子的电子光谱
  • 批准号:
    2206439
  • 财政年份:
    2022
  • 资助金额:
    $ 43.07万
  • 项目类别:
    Standard Grant
Kinetics and spectroscopy of fluorine-silicon compounds
氟硅化合物的动力学和光谱
  • 批准号:
    495852613
  • 财政年份:
    2022
  • 资助金额:
    $ 43.07万
  • 项目类别:
    Research Grants
Understanding and control of silicon surface oxidation by supersonic molecular beams and synchrotron radiation real-time photoelectron spectroscopy
超声分子束和同步辐射实时光电子能谱理解和控制硅表面氧化
  • 批准号:
    20K05338
  • 财政年份:
    2020
  • 资助金额:
    $ 43.07万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Evaluation of impedance spectroscopy as a tool to characterize performance losses in silicon photovoltaics
阻抗谱作为表征硅光伏性能损失的工具的评估
  • 批准号:
    519751-2017
  • 财政年份:
    2017
  • 资助金额:
    $ 43.07万
  • 项目类别:
    Engage Grants Program
Elucidation of Reaction Mechanism of Silicon Negative-Electrodes for Lithium-Ion Batteries by In-Situ Raman Spectroscopy
原位拉曼光谱阐明锂离子电池硅负极的反应机理
  • 批准号:
    15K21166
  • 财政年份:
    2015
  • 资助金额:
    $ 43.07万
  • 项目类别:
    Grant-in-Aid for Young Scientists (B)
Basic study of a silicon drift detector for an X-ray spectroscopy of kaonic deuterium atom
高离子氘原子X射线谱硅漂移探测器的基础研究
  • 批准号:
    24740147
  • 财政年份:
    2012
  • 资助金额:
    $ 43.07万
  • 项目类别:
    Grant-in-Aid for Young Scientists (B)
Position sensitive silicon detector telescope for charged particle spectroscopy: St. Mary's silicon telescope array (SMITA)
用于带电粒子光谱的位置敏感硅探测器望远镜:圣玛丽硅望远镜阵列 (SMITA)
  • 批准号:
    359892-2008
  • 财政年份:
    2008
  • 资助金额:
    $ 43.07万
  • 项目类别:
    Subatomic Physics Envelope - Research Tools and Instruments
STTR PHASE I: In-situ Diagnostics and Process Control Based on Optical Emission Spectroscopy and Neural Networks for Manufacturing Thin Film Silicon Photovoltaic Materials
STTR 第一阶段:基于发射光谱和神经网络的原位诊断和过程控制,用于制造薄膜硅光伏材料
  • 批准号:
    0740538
  • 财政年份:
    2008
  • 资助金额:
    $ 43.07万
  • 项目类别:
    Standard Grant
Analysis of the tail states in hydrogenated amorphous silicon by ultra-fast transmission spectroscopy
超快透射光谱分析氢化非晶硅的尾态
  • 批准号:
    367540-2008
  • 财政年份:
    2008
  • 资助金额:
    $ 43.07万
  • 项目类别:
    University Undergraduate Student Research Awards
{{ showInfoDetail.title }}

作者:{{ showInfoDetail.author }}

知道了