Understanding Microstructures of Mixed III Nitride Layers

技术：该项目旨在更好地了解应力和生长速率对混合iii -氮化物层的相分离和光学性质的影响。已经观察到，界面应力似乎抑制了InGaN/GaN界面相邻区域中InGaN层中相分离的发生。这种效应是由成分锁定引起的，还是由双节曲线和单节曲线的错拟合引起的位移引起的，目前有几种方法可以解决。研究了应力对混合III氮化物量子点、量子线和量子阱微观结构的影响，以及利用相分离技术在InGaN和AlGaN层中合成调制结构。这项研究将与堪萨斯州立大学的H. Jiang教授和埃默里大学的K. K. Bajaj教授合作进行。非技术：该项目涉及材料科学主题领域的基础研究问题，具有很高的技术相关性，并有望为跨学科领域的研究生和本科生培训提供独特的机会。除了教育和培训研究生，使他们能够很好地应对工业界和学术界的挑战，pi还将为K-12学生启动一个名为“科学是有趣的”的项目。

Technical: This project aims for greater understanding of the effects of stresses and growth rates on phase separation and optical properties of mixed III-nitride layers. It has been observed that interfacial stresses appear to inhibit the occurrence of phase separation in InGaN layers in regions contiguous to InGaN/GaN interfaces. Whether this effect is caused by composition latching or misfit-induced shift of binodal and spinodal curves is being addressed in several ways. Effects of stress on microstructures of quantum dots, quantum wires, and quantum wells of mixed III nitrides will be studied, as well as the synthesis of modulated structures in InGaN and AlGaN layers using phase separation. This study will be carried out in collaboration with Professors H. Jiang of Kansas State University, and K. K. Bajaj of Emory University.Non-technical: The project addresses basic research issues in a topical area of materials science with high technological relevance, and is expected to provide unique opportunities for graduate and undergraduate training in an interdisciplinary field. Besides educating and training graduate students who will be well equipped to handle challenges in industry and academia, the PIs will start a program for K-12 students on 'Science is Fun'.