Understanding Microstructures of Mixed III Nitride Layers

技术支持：该项目旨在更好地了解应力和生长速率对混合III族氮化物层的相分离和光学特性的影响。已经观察到，界面应力似乎抑制了InGaN层中与InGaN/GaN界面邻接的区域中的相分离的发生。这种效应是否是由组合物闭锁或失配引起的双节和旋节曲线的移位引起的，正在以几种方式解决。将研究应力对混合III族氮化物的量子点、量子线和量子威尔斯的微观结构的影响，以及使用相分离在InGaN和AlGaN层中合成调制结构。这项研究将与H教授合作进行。堪萨斯州立大学的Jiang和K. K.非技术性：该项目解决了材料科学这一具有高技术相关性的热门领域的基础研究问题，预计将为跨学科领域的研究生和本科生培训提供独特的机会。除了教育和培训那些有能力应对工业和学术界挑战的研究生外，PI还将为K-12学生启动一个“科学是有趣的”项目。

Technical: This project aims for greater understanding of the effects of stresses and growth rates on phase separation and optical properties of mixed III-nitride layers. It has been observed that interfacial stresses appear to inhibit the occurrence of phase separation in InGaN layers in regions contiguous to InGaN/GaN interfaces. Whether this effect is caused by composition latching or misfit-induced shift of binodal and spinodal curves is being addressed in several ways. Effects of stress on microstructures of quantum dots, quantum wires, and quantum wells of mixed III nitrides will be studied, as well as the synthesis of modulated structures in InGaN and AlGaN layers using phase separation. This study will be carried out in collaboration with Professors H. Jiang of Kansas State University, and K. K. Bajaj of Emory University.Non-technical: The project addresses basic research issues in a topical area of materials science with high technological relevance, and is expected to provide unique opportunities for graduate and undergraduate training in an interdisciplinary field. Besides educating and training graduate students who will be well equipped to handle challenges in industry and academia, the PIs will start a program for K-12 students on 'Science is Fun'.