Monolithic Active Silicon Nano-Photonics

单片活性硅纳米光子学

• 批准号: 0725515
• 负责人: Kent Choquette
• 金额: $ 27万
• 依托单位: University of Illinois at Urbana-Champaign
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2007
• 资助国家: 美国
• 起止时间: 2007-09-15 至 2011-02-28
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0725515&HistoricalAwards=false
• 关键词: Monolithic; Active; Silicon; Nano; Photonics

ECCS-0725515K. D. Choquette, Univ. of Illinois at Urbana-ChampaignIntellectual Merit The overarching objective of this proposal is to develop the technology infrastructure for silicon based optoelectronic devices through investigation of nano-engineering approaches for semiconductor heteroepitaxy and device fabrication. The efforts will be focused on the development of new semiconductor materials synthesis and photonic device fabrication technologies that are compatible with existing Si-based microelectronics. The specific research objectives will be to pursue the monolithic integration of AlGaInSb epilayers with silicon substrates and to fabricate photonic crystal light emitting diodes. The research approaches will be the use of interface misfit arrays and spatial gain engineering with nanometer scale patterning to demonstrate electrically injected infrared light emitters compatible with silicon substrates. The intellectual merit of this research is the development of Si-based optoelectronic devices compatible with electronic circuits represents a significant advance for computing, computer networks, and information distribution applications. The development of integrated microelectronic/optoelectronic components will enable the all-optical internet and reconfigurable optical interconnects that will enhance the infrastructure of the Information Age.Broader Impact:The broader impact of these technological advances will be to increase the performance while decreasing the cost of computing and information distribution. For example this will directly enable the penetration of the internet into wider segments of our society and create further productivity enhancements to the United States industry and State economies. Just as important is the teaching and training of the next generation of scientists and engineers. This will be done through the incorporation of undergraduate and graduate students from under-represented students in science and technology, as well as the participation and inspiration of high school students in this research. This research will enable a potentially revolutionary photonic technology to impact future computer and optical communication systems with the concomitant objective of contributing to the education of future optoelectronic scientists and engineers.

ECCS-0725515K。 D.乔凯特，大学。该提案的总体目标是通过研究半导体异质外延和器件制造的纳米工程方法来开发硅基光电器件的技术基础设施。 这些努力将集中于开发与现有硅基微电子兼容的新型半导体材料合成和光子器件制造技术。 具体研究目标是实现 AlGaInSb 外延层与硅衬底的单片集成，并制造光子晶体发光二极管。 研究方法将使用界面失配阵列和具有纳米级图案的空间增益工程来演示与硅基板兼容的电注入红外光发射器。 这项研究的智力价值是与电子电路兼容的硅基光电器件的开发代表了计算、计算机网络和信息分发应用的重大进步。 集成微电子/光电元件的发展将使全光互联网和可重构光互连成为可能，从而增强信息时代的基础设施。 更广泛的影响：这些技术进步的更广泛影响将是提高性能，同时降低计算和信息分发的成本。 例如，这将直接使互联网渗透到我们社会的更广泛领域，并进一步提高美国工业和国家经济的生产力。 同样重要的是下一代科学家和工程师的教学和培训。 这将通过吸纳科学技术领域代表性不足的本科生和研究生以及高中生对这项研究的参与和启发来完成。 这项研究将使潜在的革命性光子技术能够影响未来的计算机和光通信系统，同时为未来光电科学家和工程师的教育做出贡献。