SBIR PHASE I: High Power, Vertically Conducting UV LEDs

这项SBIR第一阶段研究计划将基于一种新的垂直导电几何结构开发高功率、大面积、深紫外光LED，该几何结构可任意扩展。基于AlInGaN的深紫外光LED最近已经被开发和商业化。这些紫外光LED的性能得到了提高，导致在连续工作模式下产生1-2 mW的输出功率时，器件的外部量子效率约为2%。尽管取得了初步的成功，但这些设备的输出功率远远低于一些最大的紫外线细分市场(如水和空气净化)渗透所需的功率。这项研究将开发垂直导电大面积LED，预计每1 mm x 1 mm器件的最低输出功率为10 mW。这一表现将使其能够渗透到现有的大型UV市场。深紫外光发光二极管为元件和系统用半导体产品的商业化提供了新的机遇。总部位于美国的制造商在可见光LED市场的全球竞争中取得了成功，五家最大的LED制造商中有两家位于美国，两家在日本，一家在德国。这一光电领域每年都在持续增长，通过该计划获得的专业知识将有助于推动新型光源的发展。

This SBIR Phase I research program will develop high power, large area, deep ultraviolet LEDs based on a novel vertically conducting geometry that is arbitrarily scalable. AlInGaN based deep ultraviolet LEDs have recently been developed and commercialized. The performance of these UV LEDs has increased resulting in external quantum efficiency of the devices being approximately 2% with 1-2 mW of output power generated in continuous operating mode. Despite this initial success, the output power from these devices is far below that which is required for penetration of some of the largest UV market segments (e.g. water and air purification). This research will develop vertically conducting large area LEDs with expected minimum output powers of 10 mW per 1 mm x 1 mm device. This performance will allow for penetration into large existing UV market segments. Deep ultraviolet light emitting diodes represent a new opportunity for commercialization of semiconductor products for component and systems use. U.S. based manufacturers have succeeded in competing globally in the visible LED market with two of the five largest LED manufacturers being based in the U.S. with two in Japan and one in Germany. This optoelectronic field continues to grow each year and the expertise gained through this program will contribute to the advancement of a novel light source.