SBIR PHASE I: High Power, Vertically Conducting UV LEDs

该SBIR第一阶段研究计划将开发高功率，大面积，深紫外LED的基础上，一种新的垂直导电的几何形状，是任意可扩展的。基于AlInGaN的深紫外LED最近已经被开发和商业化。这些UV LED的性能已经增加，导致器件的外部量子效率为约2%，在连续操作模式下产生1-2 mW的输出功率。尽管取得了初步成功，但这些设备的输出功率远远低于渗透一些最大的紫外线细分市场（例如水和空气净化）所需的功率。这项研究将开发垂直传导的大面积LED，预期每1 mm x 1 mm器件的最小输出功率为10 mW。这种性能将允许渗透到现有的大型UV细分市场。深紫外发光二极管代表了用于组件和系统用途的半导体产品商业化的新机会。美国制造商在可见光LED市场的全球竞争中取得了成功，五大LED制造商中有两家位于美国，两家位于日本，一家位于德国。这个光电领域每年都在继续增长，通过该计划获得的专业知识将有助于推动新型光源的发展。

This SBIR Phase I research program will develop high power, large area, deep ultraviolet LEDs based on a novel vertically conducting geometry that is arbitrarily scalable. AlInGaN based deep ultraviolet LEDs have recently been developed and commercialized. The performance of these UV LEDs has increased resulting in external quantum efficiency of the devices being approximately 2% with 1-2 mW of output power generated in continuous operating mode. Despite this initial success, the output power from these devices is far below that which is required for penetration of some of the largest UV market segments (e.g. water and air purification). This research will develop vertically conducting large area LEDs with expected minimum output powers of 10 mW per 1 mm x 1 mm device. This performance will allow for penetration into large existing UV market segments. Deep ultraviolet light emitting diodes represent a new opportunity for commercialization of semiconductor products for component and systems use. U.S. based manufacturers have succeeded in competing globally in the visible LED market with two of the five largest LED manufacturers being based in the U.S. with two in Japan and one in Germany. This optoelectronic field continues to grow each year and the expertise gained through this program will contribute to the advancement of a novel light source.