SBIR Phase I: Growth of Bulk AlGaN Substrates Using a Modified Hydride Vapor Phase Epitaxy (HVPE) Reactor

SBIR 第一阶段：使用改进的氢化物气相外延 (HVPE) 反应器生长块状 AlGaN 衬底

• 批准号: 0539513
• 负责人: Thomas Katona
• 金额: $ 10万
• 依托单位: Sensor Electronic Technology, Inc.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2006
• 资助国家: 美国
• 起止时间: 2006-01-01 至 2006-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0539513&HistoricalAwards=false
• 关键词: SBIR; Phase; Growth; Bulk; AlGaN

This Small Business Innovation Research (SBIR) Phase I project will develop bulk AlGaN substrates for advanced III-Nitride based semiconductor devices. The substrates will be grown by a modified hydride vapor phase epitaxy (HVPE) technique to produce thick, low dislocation density, lattice matched substrates for next generation electronic andoptoelectronic devices. Low dislocation density bulk III-Nitride substrates represent an enabling technology for a variety of devices, currently limited by heteroepitaxial growth on sapphire and SiC. Sensor Electronic Technology will use a novel HVPE growth technique coupled with substrate strain engineering to produce free standing AlGaN boules that will be used as seeds for continued bulk AlGaN development. Phase I will focus on optimizing AlGaN growth processes for a range of aluminum compositions, while establishing the feasibility of commercializing bulk substrates using this approach.Commercially, III-Nitride device development and commercialization has expanded rapidly over the last decade with blue/green/white LEDs found in most cellular phones, traffic signals, and large screen displays; standards for the next generation high density DVD format being established based on blue laser diode technology; and AlGaN/GaN HFETs being targeted to replace power amplifiers and low noise amplifiers in military radar and wireless communication applications. III-Nitrides are arguably the fastest growing area of compound semiconductors at this time with new applications for these materials continually developing. Estimated revenue for III-Nitride devices exceeds $10 billion by 2007, presenting a tremendous opportunity for bulk substrate commercialization

该小型企业创新研究（SBIR）第一阶段项目将开发用于先进的III族氮化物半导体器件的块状AlGaN衬底。衬底将通过改进的氢化物气相外延（HVPE）技术生长，以生产下一代电子和光电子器件所需的厚的、低位错密度的、晶格匹配的衬底。低位错密度块状III族氮化物衬底代表了用于各种器件的使能技术，这些器件目前受到蓝宝石和SiC上的异质外延生长的限制。传感器电子技术公司将使用一种新型的HVPE生长技术与衬底应变工程相结合来生产独立的AlGaN晶棒，这些晶棒将用作持续体AlGaN开发的种子。在商业上，III族氮化物器件的开发和商业化在过去十年中迅速发展，蓝/绿色/白色LED被用于大多数蜂窝电话、交通信号灯和大屏幕显示器;基于蓝色激光二极管技术的下一代高密度DVD格式标准正在建立; AlGaN/GaN HFET的目标是取代军用雷达和无线通信应用中的功率放大器和低噪声放大器。III族氮化物可以说是化合物半导体中增长最快的领域，这些材料的新应用不断发展。预计到2007年，III族氮化物器件的收入将超过100亿美元，这为大块衬底的商业化提供了巨大的机会