SBIR Phase II: High Power, Vertically Conducting UV LEDs
SBIR 第二阶段:高功率、垂直导电 UV LED
基本信息
- 批准号:0848994
- 负责人:
- 金额:$ 49.93万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2009
- 资助国家:美国
- 起止时间:2009-02-15 至 2011-01-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
This Small Business Innovation Research (SBIR) Phase II project will result in the commercialization of high power, large area, deep UV LEDs based on a novel vertically conducting geometry that is arbitrarily scalable. AlInGaN based deep UV-B LEDs (ë = 300 - 340 nm) have recently been developed and commercialized but have not reached the performance metrics of shorter wavelength UV-C LEDs, or longer wavelength visible LEDs. These devices have been able to penetrate some niche markets but because the output power is far below that which is required for penetration of the largest UV-B market segments (e.g. biomedical instrumentation and industrial curing) they have been limited in their reach. Visible LEDs faced a similar challenge 5-10 years ago and it was recognized that to compete with existing technology, high power large area LEDs were required. This approach has been limited for deep UV LEDs because the insulating UV transparent substrates combined with relatively large resistance AlGaN materials result in current crowding and non-uniform device bias when geometry is scaled up. To address this challenge, the company is developing vertically conducting large area LEDs with expected minimum output powers of 10 mW per 1 mm x 1 mm device. Deep UV light emitting diodes represent a new opportunity for commercialization of semiconductor products for component and systems use. U.S. based manufacturers have succeeded in competing globally in the visible LED market with two of the five largest LED manufacturers being based in the U.S. with two in Japan and one in Germany. This optoelectronic field continues to grow each year and if the outcome of this effort is successful its outcome will contribute to the advancement of a novel light source. The creation of this company will capitalize on the high-tech research that is being performed at the University Of South Carolina by providing an environment in which to transition this knowledge into a commercial setting as part of efforts to transition the local economy from traditional industries such as textile manufacturing.
这个小企业创新研究(SBIR)第二阶段项目将导致高功率,大面积,深紫外LED的商业化,基于一种新颖的垂直导电几何形状,可任意扩展。基于AlInGaN的深UV-B LED(λ = 300 - 340 nm)最近已被开发和商业化,但尚未达到较短波长UV-C LED或较长波长可见光LED的性能指标。这些设备已经能够渗透一些利基市场,但由于输出功率远低于渗透最大的UV-B细分市场(例如生物医学仪器和工业固化)所需的功率,因此它们的范围受到限制。可见光LED在5-10年前面临类似的挑战,并且人们认识到,为了与现有技术竞争,需要高功率大面积LED。这种方法对于深UV LED是有限的,因为当几何形状按比例放大时,与相对大电阻AlGaN材料组合的绝缘UV透明衬底导致电流拥挤和不均匀的器件偏置。为了应对这一挑战,该公司正在开发垂直传导的大面积LED,预期每1 mm x 1 mm器件的最小输出功率为10 mW。深紫外发光二极管代表了用于组件和系统用途的半导体产品商业化的新机会。美国制造商在可见光LED市场的全球竞争中取得了成功,五大LED制造商中有两家位于美国,两家位于日本,一家位于德国。这个光电领域每年都在继续增长,如果这项努力的结果是成功的,它的结果将有助于新光源的发展。该公司的成立将利用南卡罗来纳州大学正在进行的高科技研究,提供一个环境,将这些知识转化为商业环境,作为将当地经济从纺织制造等传统行业转型的努力的一部分。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Thomas Katona其他文献
A computer model of the periodontal ligament space in man.
人类牙周膜空间的计算机模型。
- DOI:
- 发表时间:
1988 - 期刊:
- 影响因子:3
- 作者:
Thomas Katona;V. M. Tackney;J. Keates - 通讯作者:
J. Keates
Physicochemical properties, pharmacokinetics, and biodistribution of gadoteridol injection in rats and dogs.
钆特醇注射液在大鼠和犬体内的理化性质、药代动力学和生物分布。
- DOI:
- 发表时间:
1995 - 期刊:
- 影响因子:4.8
- 作者:
Michael N. Eakins;Stephen M. Eaton;Ricardo A. Fisco;Richard J. Hunt;Callixtus E. Ita;Thomas Katona;Laila M. Owies;Ernst Schramm;Joseph W. Sulner;Charles W. Thompson;Gregory White;S. M. Yerramilli - 通讯作者:
S. M. Yerramilli
Mechanisms of tooth eruption in a computer-generated analysis of functional jaw deformations in man.
计算机生成的人类功能性下颌变形分析中的牙齿萌出机制。
- DOI:
- 发表时间:
1987 - 期刊:
- 影响因子:3
- 作者:
Thomas Katona;Ann M. Boyle;F. Curcio;J. Keates;R. J. Mazzara;V. M. Tackney - 通讯作者:
V. M. Tackney
Thomas Katona的其他文献
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{{ truncateString('Thomas Katona', 18)}}的其他基金
Collaborative Research: Research Initiation: Educational Methods for Teaching Adaptive Responses to Entrepreneurial Failure
合作研究:研究启动:教授对创业失败的适应性反应的教育方法
- 批准号:
2024570 - 财政年份:2020
- 资助金额:
$ 49.93万 - 项目类别:
Standard Grant
SBIR PHASE I: Bulk AlN Growth For III-Nitride Devices
SBIR 第一阶段:III 氮化物器件的块状 AlN 生长
- 批准号:
0740546 - 财政年份:2008
- 资助金额:
$ 49.93万 - 项目类别:
Standard Grant
SBIR PHASE I: High Power, Vertically Conducting UV LEDs
SBIR 第一阶段:高功率、垂直导电 UV LED
- 批准号:
0740621 - 财政年份:2008
- 资助金额:
$ 49.93万 - 项目类别:
Standard Grant
SBIR Phase I: Growth of Bulk AlGaN Substrates Using a Modified Hydride Vapor Phase Epitaxy (HVPE) Reactor
SBIR 第一阶段:使用改进的氢化物气相外延 (HVPE) 反应器生长块状 AlGaN 衬底
- 批准号:
0539513 - 财政年份:2006
- 资助金额:
$ 49.93万 - 项目类别:
Standard Grant
SBIR PHASE I: High Power Deep UV LED-Based Lamps
SBIR 第一阶段:基于 LED 的高功率深紫外灯
- 批准号:
0512450 - 财政年份:2005
- 资助金额:
$ 49.93万 - 项目类别:
Standard Grant
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