SBIR PHASE I: Bulk AlN Growth For III-Nitride Devices

SBIR 第一阶段：III 氮化物器件的块状 AlN 生长

• 批准号: 0740546
• 负责人: Thomas Katona
• 金额: $ 9.99万
• 依托单位: Nitek Incorporated
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2008
• 资助国家: 美国
• 起止时间: 2008-01-01 至 2008-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0740546&HistoricalAwards=false
• 关键词: SBIR; PHASE; Bulk; AlN; Growth

This Small Business Innovation Research project is to develop a novel semiconductor growth technique resulting in low dislocation density AlInGaN material that can be used to advance the current state of III-Nitride semiconductor device performance. The growth technique termed Metalorganic Hydride Vapor Phase Epitaxy (MOHVPE) is a hybrid of Metalorganic Chemical Vapor Deposition (MOCVD), used for device growth where atomic layer accuracy is required, and Hydride Vapor Phase Epitaxy (HVPE), used for fast bulk growth.Deep UV light emitting diodes represent a new market opportunity for commercialization of semiconductor products for component and systems use. U.S. based manufacturers have succeeded in competing globally in the visible LED market with two of the five largest LED manufacturers being based in the U.S. with two in Japan and one in Germany. The Deep UV light emitting diodes enabled by this project will find application in water sterilization point of use systems.

这个小企业创新研究项目是开发一种新型的半导体生长技术，产生低位错密度的AlInGaN材料，可用于提高III族氮化物半导体器件性能的当前状态。被称为金属有机氢化物气相外延（MOHVPE）的生长技术是金属有机化学气相沉积（MOCVD）和氢化物气相外延（HVPE）的混合，金属有机化学气相沉积（MOCVD）用于需要原子层精度的器件生长，氢化物气相外延（HVPE）用于快速批量生长。美国制造商在可见光LED市场的全球竞争中取得了成功，五大LED制造商中有两家位于美国，两家位于日本，一家位于德国。 该项目启用的深紫外发光二极管将在水消毒使用点系统中找到应用。