SBIR Phase I: Ultrafast spintronic devices based on magnetic tunnel junctions using magnesium oxide (MgO) tunnel barriers

SBIR 第一阶段：基于使用氧化镁 (MgO) 隧道势垒的磁性隧道结的超快自旋电子器件

• 批准号: 0740783
• 负责人: Matthew Carter
• 金额: --
• 依托单位: MICRO MAGNETICS INC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2008
• 资助国家: 美国
• 起止时间: 2008-01-01 至 2008-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0740783&HistoricalAwards=false
• 关键词: SBIR; Phase; Ultrafast; spintronic; devices

This SBIR Phase I project is to investigate magnetic layer compositions, structures, and geometries to develop spintronic devices using magnesium oxide based magnetic tunnel junctions that operate in the deep sub nanosecond time regime. The research will address the problem of slow magnetic response from both an experimental and theoretical prospective. A software package will be developed to facilitate conceptual understanding of the magnetization dynamics.The ultrafast magnetic materials and structures that will be developed will increase the performance of magnetic memory and magnetic sensors thus benefiting applications in data storage, magnetic sensing and non-destructive evaluation.

该SBIR第一阶段项目是研究磁性层的组成，结构和几何形状，以开发使用氧化镁的磁性隧道结，在深亚纳秒时间制度下运行的自旋电子器件。 这项研究将从实验和理论两个角度解决慢磁响应的问题。 将开发一个软件包，以促进对磁化动力学的概念性理解。将开发的超快磁性材料和结构将提高磁存储器和磁传感器的性能，从而有利于数据存储、磁传感和非破坏性评估的应用。