SBIR Phase I: Ultrafast spintronic devices based on magnetic tunnel junctions using magnesium oxide (MgO) tunnel barriers

SBIR第一阶段的项目是研究磁层的组成、结构和几何形状，利用氧化镁为基础的磁隧道结来开发自旋电子器件，这些器件在亚纳秒的时间范围内工作。本研究将从实验和理论两方面解决磁响应缓慢的问题。将开发一个软件包，以促进对磁化动力学的概念理解。即将开发的超快磁性材料和结构将提高磁存储器和磁传感器的性能，从而有利于数据存储，磁传感和无损评估的应用。

This SBIR Phase I project is to investigate magnetic layer compositions, structures, and geometries to develop spintronic devices using magnesium oxide based magnetic tunnel junctions that operate in the deep sub nanosecond time regime. The research will address the problem of slow magnetic response from both an experimental and theoretical prospective. A software package will be developed to facilitate conceptual understanding of the magnetization dynamics.The ultrafast magnetic materials and structures that will be developed will increase the performance of magnetic memory and magnetic sensors thus benefiting applications in data storage, magnetic sensing and non-destructive evaluation.