SBIR Phase II: Ultrafast spintronic devices based on magnetic tunnel junctions using magnesium oxide (MgO) tunnel barriers

该奖项是根据2009年《美国复苏和再投资法案》(Public Law 111-5)资助的。这个小型企业创新研究第二阶段项目将开发一种使用氧化镁基磁隧道结(MTJ)的超快固态磁传感器。工作频率范围将从DC到2 GHz，是竞争技术中最宽的。该传感器将具有紧凑的尺寸和高灵敏度，并将在没有支持系统的环境条件下运行。批量生产这些设备的能力将提供显著的成本优势。超高速传感器有一个关键的未得到满足的需求。这些传感器可以对超大规模集成电路半导体芯片、飞机部件和发动机涡轮机进行无损评估(NDE)，它们将使计算机能够更快地处理数据存储设备中的信息，并可用于测量天线等设备中的快速电流。这些传感器为监测飞机的健康状况带来了巨大的希望。超快传感器还可以监控VLSI在故障分析中的性能，通过缩短开发周期来增强半导体行业的竞争力。在超快传感器方面获得的知识可以用来制造更快的数据存储设备，并建设更好的国防基础设施。

This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5).This Small Business Innovation Research Phase II project will develop an ultrafast solid-state magnetic sensor using MgO-based magnetic tunneling junction (MTJ). The operating frequency range will span from DC to 2 GHz, the broadest among competing technologies. The sensor will have a compact size and high sensitivity and will operate at ambient conditions with no supporting system. The ability to mass produce these devices will provide a significant cost advantage. There is a critical unmet need in ultrafast sensors. These sensors can perform non-destructive evaluation (NDE) of VLSI semiconductor chips, aircraft components and engine turbines, they will allow computers to process information faster in data storage devices, and they can be used to measure fast currents in devices such as antenna. The sensors hold great promise for monitoring the health of aircrafts. Ultrafast sensors can also monitor the performance of VLSI in failure analysis, enhancing the competitiveness of the semiconductor industry by shortening the development cycles. Knowledge gained in ultrafast sensor can be used to make faster data storage devices and build better national defense infrastructure.