SBIR Phase II: Enhanced Plasma deposition Process for MgO-Based Magnetic Tunnel Junctions with 500% Magnetoresistance

SBIR%20Phase%20II:%20%20Enhanced%20Plasma%20deposition%20Process%20for%20MgO-Based%20Magnetic%20Tunnel%20Junctions%20with%20500%%20Magnetoresistance

• 批准号: 0724913
• 负责人: Matthew Carter
• 金额: $ 49.99万
• 依托单位: MICRO MAGNETICS INC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2007
• 资助国家: 美国
• 起止时间: 2007-07-15 至 2012-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0724913&HistoricalAwards=false
• 关键词: SBIR; Phase; II; Enhanced; Plasma

This Small Business Innovation Research Phase II project will develop the process to fabricate magnesium-oxide (MgO) based magnetic tunnel junction (MTJ) sensor devices, which are simultaneously ultra-sensitive at high frequencies, small in size, with high output, and extremely low power consumption. The dual advantages of high sensitivity and low power consumption will separate these sensor devices from traditional Hall-effect and magnetoresistive sensor products, which are power hungry and typically not suitable for many high-performance and battery-powered sensing applications. This innovative approach combines the high resistivity tunneling and enhanced signal strength derived from magnesium oxide tunnel barrier technology. The broader impact anticipated if this project is realized is a new class of MgO-based sensors with high sensitivity and low power consumption, and the development of a reliable fabrication process suitable for mass production. This project will advance the state of understanding of the emerging spintronic technology of magnetic tunnel junctions, a class of devices which forms the central component of a number of important commercial products in the high-tech semiconductor and data storage industries. Finally, the collaboration of physicists, electrical engineers, materials scientists, and students will result in a broader multidisciplinary training and education for all the participants in the field of spintronics.

该小型企业创新研究第二阶段项目将开发制造氧化镁（MgO）基磁性隧道结（MTJ）传感器器件的工艺，该器件同时具有高频超灵敏度、小尺寸、高输出和极低功耗。高灵敏度和低功耗的双重优势将这些传感器器件与传统的霍尔效应和磁阻传感器产品区分开来，后者耗电量大，通常不适合许多高性能和电池供电的传感应用。这种创新的方法结合了高电阻率隧穿和增强的信号强度来自氧化镁隧道势垒技术。如果该项目得以实现，预计将产生更广泛的影响，这将是一类具有高灵敏度和低功耗的新型MgO基传感器，并开发出适合大规模生产的可靠制造工艺。该项目将促进对磁隧道结新兴自旋电子技术的理解，磁隧道结是一类器件，构成了高科技半导体和数据存储行业中许多重要商业产品的核心组件。最后，物理学家，电气工程师，材料科学家和学生的合作将为自旋电子学领域的所有参与者提供更广泛的多学科培训和教育。