STTR PHASE I: Nanoscale Silver Pastes for Low-Temperature Joining of Power Semiconductor Devices

STTR 第一阶段：用于功率半导体器件低温连接的纳米级银浆

• 批准号: 0740927
• 负责人: Susan Luo
• 金额: --
• 依托单位: NBE Technologies, LLC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2008
• 资助国家: 美国
• 起止时间: 2008-01-01 至 2008-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0740927&HistoricalAwards=false
• 关键词: STTR; PHASE; Nanoscale; Silver; Pastes

This Small Business Technology Transfer (STTR) Phase I project will investigate the feasibility of employing novel silver pastes for joining power semiconductor devices to achieve 5 times higher temperature cycling capability, 3 times better total module resistance, and device junction temperature over 175 degrees Celsius. A sintering technology for joining semiconductor chips, now being implemented in manufacturing lines of some major European companies, requires a 120-ton press to lower the sintering temperature of silver powders. This significantly complicates the manufacturing process and places critical demands on substrate flatness and thickness of the chips. This project uses materials that can be sintered below 270 degrees Celsius under ambient pressure and have 5 times better thermal and electrical properties than widely used solder alloys, thus will have great commercial potential to improve the electronic assembly process and products. The broader impacts/commercial potential is to the electronics manufacturers in the United States by providing a low-cost manufacturing process for low-temperature sintering technology for joining devices.

这个小型企业技术转移（STTR）第一阶段项目将研究采用新型银浆料连接功率半导体器件的可行性，以实现5倍的温度循环能力，3倍的总模块电阻，以及超过175摄氏度的器件结温。目前在欧洲一些大公司的生产线上实施的用于接合半导体芯片的烧结技术需要120吨的压机来降低银粉末的烧结温度。这显著地使制造工艺复杂化，并且对芯片的基板平坦度和厚度提出了严格的要求。该项目使用的材料可以在环境压力下在270摄氏度以下烧结，并且具有比广泛使用的焊料合金高5倍的热性能和电性能，因此将具有改进电子组装工艺和产品的巨大商业潜力。更广泛的影响/商业潜力是通过为连接设备的低温烧结技术提供低成本的制造工艺而对美国的电子制造商产生的。