STTR PHASE I: Nanoscale Silver Pastes for Low-Temperature Joining of Power Semiconductor Devices

这个小型企业技术转移（STTR）第一阶段项目将研究采用新型银浆料连接功率半导体器件的可行性，以实现5倍高的温度循环能力，3倍更好的总模块电阻，以及超过175摄氏度的器件结温。目前在欧洲一些大公司的生产线上使用的连接半导体芯片的烧结技术，需要120吨的压力机来降低银粉的烧结温度。这大大复杂化了制造过程，并对基板的平面度和芯片的厚度提出了关键要求。该项目使用的材料可以在270摄氏度以下的环境压力下烧结，其热学和电学性能比广泛使用的焊料合金好5倍，因此在改善电子组装工艺和产品方面具有很大的商业潜力。通过为连接设备的低温烧结技术提供低成本制造工艺，对美国的电子制造商产生更广泛的影响/商业潜力。

This Small Business Technology Transfer (STTR) Phase I project will investigate the feasibility of employing novel silver pastes for joining power semiconductor devices to achieve 5 times higher temperature cycling capability, 3 times better total module resistance, and device junction temperature over 175 degrees Celsius. A sintering technology for joining semiconductor chips, now being implemented in manufacturing lines of some major European companies, requires a 120-ton press to lower the sintering temperature of silver powders. This significantly complicates the manufacturing process and places critical demands on substrate flatness and thickness of the chips. This project uses materials that can be sintered below 270 degrees Celsius under ambient pressure and have 5 times better thermal and electrical properties than widely used solder alloys, thus will have great commercial potential to improve the electronic assembly process and products. The broader impacts/commercial potential is to the electronics manufacturers in the United States by providing a low-cost manufacturing process for low-temperature sintering technology for joining devices.