STTR PHASE I: Nanoscale Silver Pastes for Low-Temperature Joining of Power Semiconductor Devices

这个小型企业技术转移(STTR)第一阶段项目将研究使用新型银浆连接电力半导体器件的可行性，以实现5倍更高的温度循环能力，3倍更高的总模块电阻，以及超过175摄氏度的器件结温。一种连接半导体芯片的烧结技术目前正在一些欧洲大公司的生产线上实施，它需要一台120吨的压力机来降低银粉的烧结温度。这大大增加了制造工艺的复杂性，并对基板平坦度和芯片厚度提出了苛刻的要求。该项目使用的材料可以在270摄氏度以下常压烧结，并且具有比广泛使用的焊料合金更好的热和电性能5倍，因此将在改进电子组装工艺和产品方面具有巨大的商业潜力。对美国的电子制造商来说，更广泛的影响/商业潜力是通过为连接设备提供低成本的低温烧结技术制造工艺。

This Small Business Technology Transfer (STTR) Phase I project will investigate the feasibility of employing novel silver pastes for joining power semiconductor devices to achieve 5 times higher temperature cycling capability, 3 times better total module resistance, and device junction temperature over 175 degrees Celsius. A sintering technology for joining semiconductor chips, now being implemented in manufacturing lines of some major European companies, requires a 120-ton press to lower the sintering temperature of silver powders. This significantly complicates the manufacturing process and places critical demands on substrate flatness and thickness of the chips. This project uses materials that can be sintered below 270 degrees Celsius under ambient pressure and have 5 times better thermal and electrical properties than widely used solder alloys, thus will have great commercial potential to improve the electronic assembly process and products. The broader impacts/commercial potential is to the electronics manufacturers in the United States by providing a low-cost manufacturing process for low-temperature sintering technology for joining devices.