Engineering Crystalline Oxides on Wide Band Gap Semiconductors

宽带隙半导体上的工程晶体氧化物

• 批准号: 0801996
• 负责人: Jane Chang
• 金额: $ 30万
• 依托单位: University of California-Los Angeles
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2008
• 资助国家: 美国
• 起止时间: 2008-05-01 至 2012-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0801996&HistoricalAwards=false
• 关键词: Engineering; Crystalline; Oxides; Wide; Band

AbstractECCS-0801996J.Chang, UCLAThe objective of this research is to engineer multifunctional dielectric thin films on wide band gap semiconductors for power devices and radio frequency devices, as they have great potential in many national security and civilian applications. The approach is to develop an effective atomic layer deposition process to synthesize epitaxial dielectric thin films on wide band gap semiconductor with improved interfacial and electrical properties. The intellectual merit of the proposed research is on materials selection, synthesis, interface engineering, and device integration that would enable the design and fabrication of future generations of improved electronic devices. By combining experimental studies using state-of-the-art analytical techniques with theoretical analysis using density functional theory, ultra thin and lattice matched metal oxide thin films will be designed and synthesized on wide band gap semiconductors to enhance the functionalities of power electronics and radio frequency integrated circuits. The broader impact of the proposed research is on the education and training of graduate, undergraduate, and high school summer intern students through engineering courses and hands-on research. Research outcome will be integrated into two courses developed by the principal investigator to maximize the impact of the research. Two graduate students will be supported under this program to pursue their doctoral studies. Senior research projects and summer internship positions will be offered to undergraduate and high school students, especially women and underrepresented minority students, to work on materials characterization and spectroscopic analysis outlined in the proposed research and to help their long term career development in academia and industry.

摘要ECCS-0801996J.Chang，UCLA本研究的目的是在功率器件和射频器件的宽带隙半导体上设计多功能介电薄膜，因为它们在许多国家安全和民用应用中具有巨大的潜力。 本研究的目的是发展一种有效的原子层沉积工艺，在宽带隙半导体上制备具有良好界面性能和电学性能的外延介质薄膜。 拟议研究的智力价值在于材料选择，合成，界面工程和设备集成，这将使未来几代改进的电子设备的设计和制造成为可能。 通过将使用最先进的分析技术的实验研究与使用密度泛函理论的理论分析相结合，将在宽带隙半导体上设计和合成超薄和晶格匹配的金属氧化物薄膜，以增强电力电子和射频集成电路的功能。 拟议研究的更广泛影响是通过工程课程和实践研究对研究生、本科生和高中暑期实习生的教育和培训。 研究成果将纳入主要研究者开发的两门课程，以最大限度地发挥研究的影响。 两名研究生将在该计划下获得支持，继续他们的博士研究。 高级研究项目和暑期实习职位将提供给本科生和高中生，特别是女性和代表性不足的少数民族学生，从事拟议研究中概述的材料表征和光谱分析，并帮助他们在学术界和工业界的长期职业发展。