CPA-DA: A 3D CMP-aware Nanoscale IC Design Methodology using Physics-based Modeling with Silicon Validation via Test and Diagnosis

CPA-DA：一种 3D CMP 感知的纳米级 IC 设计方法，使用基于物理的建模以及通过测试和诊断进行的硅验证

• 批准号: 0811770
• 负责人: Cecil Higgs
• 金额: $ 30万
• 依托单位: Carnegie-Mellon University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2008
• 资助国家: 美国
• 起止时间: 2008-08-01 至 2014-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0811770&HistoricalAwards=false
• 关键词: CPA; DA; 3D; CMP; aware

PROPOSAL ID: 0811770PI: HIGGS, CECIL F.INSTITUTION: CARNEGIE-MELLON UNIVERSITYTITLE: A 3D CMP-AWARE NANOSCALE IC DESIGN METHODOLOGY USING PHYSICS-BASED MODELING WITH SILICON VALIDATION VIA TEST AND DIAGNOSISABSTRACTIt is well known that ?Moore?s Law? states that computer chips will double their speed nearly every two years due to technological advancement. This advancement is typically due to the size of the transistors on the chip which are rapidly becoming as small as a nanometer (which is 1000 times thinner than a human hair). Since the transistors are smaller, more of them can be put on a chip which leads to faster computational times. Unfortunately, the processes needed to manufacturing these computer chips are highly complex and the final product often comes out defective or with lower performance than the original design. One particular manufacturing process, chemical mechanical polishing (CMP), is a major contributor to performance degradation and manufacturing costs. By combining chip defect testing models with advanced CMP computer models, the principal investigators (PIs) propose to research and develop a breakthrough computational methodology for predicting the impact of the CMP manufacturing process on the chip at the design stage. CMP is a complex process in which the wafer surface that contains the chips is polished by pressing it against a rotating pad that is flooded with a slurry consisting of a fluid with abrasive nanoparticles. In order to accurately model this process, sophisticated computer models must be developed through collaborative research at the interface of electrical and computer engineering, applied physics, and mechanical engineering. A predictive computational tool resulting from this research would lead to radically improved concurrent engineering where chip designers are enabled to create bolder designs since they would be aware of the ramifications of CMP on their layouts. The resulting impact would be more sophisticated computer chip designs that exploit the most advanced materials which might normally be avoided due to the uncertainty of the effect of CMP on the materials. Due to the PIs on-going involvements with the recruitment and education of minority students, this work will also provide numerous opportunities to expose America?s next generation of engineering students at the pre-college and college levels to cutting-edge research in semiconductor technologies.

提案ID：0811770 PI：希格斯，塞西尔F.机构：卡内基梅隆大学一个三维CMP感知纳米级集成电路设计方法，使用基于物理的建模与硅验证通过测试和诊断结构众所周知，？摩尔？s法？他说，由于技术的进步，计算机芯片的速度几乎每两年就会翻一番。这种进步通常是由于芯片上晶体管的尺寸迅速变得小到纳米（比人类头发细1000倍）。由于晶体管更小，更多的晶体管可以放在芯片上，这导致更快的计算时间。不幸的是，制造这些计算机芯片所需的过程非常复杂，最终产品往往有缺陷或性能低于原始设计。一种特定的制造工艺，化学机械抛光（CMP），是性能退化和制造成本的主要贡献者。通过将芯片缺陷测试模型与先进的CMP计算机模型相结合，主要研究人员（PI）建议研究和开发一种突破性的计算方法，用于在设计阶段预测CMP制造工艺对芯片的影响。CMP是一种复杂的工艺，其中包含芯片的晶片表面通过将其压靠在旋转垫上来抛光，该旋转垫充满由具有磨料纳米颗粒的流体组成的浆料。为了准确地模拟这一过程，复杂的计算机模型必须通过电子和计算机工程，应用物理和机械工程的接口合作研究开发。这项研究产生的预测计算工具将从根本上改善并行工程，使芯片设计人员能够创建更大胆的设计，因为他们将意识到CMP对其布局的影响。由此产生的影响将是更复杂的计算机芯片设计，利用最先进的材料，这通常是可以避免的，由于CMP对材料的影响的不确定性。由于PI正在参与招募和教育少数民族学生，这项工作也将提供许多机会，以暴露美国？的下一代工程学生在大学预科和大学水平的尖端研究半导体技术。