Reflection-based Spintronics

基于反射的自旋电子学

• 批准号: 0820880
• 负责人: Casey Miller
• 金额: $ 31.2万
• 依托单位: University of South Florida
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2008
• 资助国家: 美国
• 起止时间: 2008-08-01 至 2012-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0820880&HistoricalAwards=false
• 关键词: Reflection; based; Spintronics

The objective of this research is to engineer thin film spintronic devices based on a dynamic magnetic proximity effect. A non-zero spin-polarization will be induced in a non-magnetic material by reflection of conduction electrons off the interface of an insulating magnetic material. The approach is to fabricate non-magnetic-conductor/magnetic-insulator structures completely in situ, then probe the resulting spin-polarized current via three complementary techniques: tunneling magnetoresistance, tunneling spin polarization, and x-ray magnetic circular dichroism. Trilayer device structures with independently addressable magnetic layers will also be explored.Intellectual Merit: This project may spearhead a paradigm shift for all-electrical spintronics. Present efforts focus on injecting spins from ferromagnets into non-magnetic materials. However, spin-injection has crippled progress, particularly for semiconductor-based devices. The proposed devices induce a spin-polarization in a non-magnetic conduction channel by reflection off an insulating magnetic gate, thereby obviating the difficulties of injection. This project will develop the building blocks for a series of more complex device architectures able to deliver electrically tunable spin-polarized currents.Broader Impacts: This transformational research may ease the integration of spintronics with existing back-end semiconductor processing, thereby substantially reducing barriers to commercial spintronics. This program integrates teaching and multidisciplinary training of undergraduate and graduate students, including those from under-represented groups, by unifying physics, engineering, and materials concepts, and by developing hands-on spintronics experiments for high school and undergraduate laboratories. This work enhances infrastructure via a new collaboration between the University of South Florida and the Advanced Light Source.

本研究的目的是设计基于动态磁邻近效应的薄膜自旋电子器件。 非零自旋极化将通过传导电子从绝缘磁性材料的界面反射而在非磁性材料中引起。 该方法是完全原位制造非磁性导体/磁性绝缘体结构，然后通过三种互补技术探测所产生的自旋极化电流：隧穿磁电阻，隧穿自旋极化和x射线磁性圆二色性。三层装置结构与独立寻址的磁性层也将被探索。智力优点：这个项目可能率先范式转变的全电自旋电子学。 目前的努力集中在将铁磁体的自旋注入非磁性材料。 然而，自旋注入阻碍了进展，特别是对于基于磁阻的设备。 所提出的器件通过绝缘磁栅的反射在非磁性导电沟道中诱导自旋极化，从而避免了注入的困难。 该项目将为一系列更复杂的器件架构开发构建模块，这些器件架构能够提供电可调的自旋极化电流。更广泛的影响：这一变革性研究可能会简化自旋电子学与现有后端半导体处理的集成，从而大大降低商业自旋电子学的障碍。该计划整合了本科生和研究生的教学和多学科培训，包括那些来自代表性不足的群体，通过统一物理，工程和材料概念，并通过为高中和本科实验室开发动手自旋电子学实验。 这项工作通过南佛罗里达大学和先进光源之间的新合作增强了基础设施。