GaN-based quantum-structure devices for THz light emission and photodetection

用于太赫兹光发射和光电检测的基于 GaN 的量子结构器件

• 批准号: 0824116
• 负责人: Roberto Paiella
• 金额: $ 40万
• 依托单位: Trustees of Boston University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2008
• 资助国家: 美国
• 起止时间: 2008-09-01 至 2012-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0824116&HistoricalAwards=false
• 关键词: GaN; based; quantum; structure; devices

Objectives: The development of terahertz sources and detectors is the subject of extensive research efforts, as these devices could enable numerous high-impact applications in the areas of sensing, spectroscopy, and imaging. GaAs-based THz devices have made substantial progress recently; however they can only provide incomplete spectral coverage and remain limited to cryogenic temperatures due to an intrinsic property of GaAs, namely the presence of LO phonons with THz-range frequencies. To overcome these limitations, the PIs propose to develop intersubband THz sources and photodetectors using GaN/AlGaN quantum wells, which feature LO-phonon frequencies well outside of the THz region.Intellectual merit: The argument of using nitride quantum wells for THz device development is very compelling and has been substantiated by detailed theoretical studies. The research objectives will be pursued with a combination of material development efforts, Monte Carlobased design studies, and device processing optimization, and all the required resources and expertise are available. This work will also advance the general state of knowledge in the area of nitride heterostructures and related devices.Broader impacts: The proposed activities will promote education through the training of students in a variety of disciplines, ranging from epitaxial growth, to quantum engineering, computational electronics, and THz photonics. To increase the program effectiveness and scope, the involvement of undergraduates, high-school interns, and students from disadvantaged backgrounds is also emphasized. Finally, the proposed devices have the potential for a revolutionary impact in several technology areas of high relevance, such as security screening,manufacturing quality control, and medical diagnostics.

目的：太赫兹源和探测器的开发是广泛研究工作的主题，因为这些设备可以在传感、光谱和成像领域实现许多高影响的应用。近年来，基于GaAs基的THz器件取得了长足的进步，但由于其固有的特性，即存在具有太赫兹频率的LO声子，它们只能提供不完全的光谱覆盖，并且仍然局限于低温温度。为了克服这些限制，PI建议使用GaN/AlGaN量子井来开发子带间THz源和光电探测器，其特征是Lo声子频率远远超出THz区域。智力优势：使用氮化物量子阱开发THz器件的论点非常有说服力，并得到了详细的理论研究的证实。研究目标将结合材料开发工作、基于蒙特卡洛的设计研究和设备工艺优化来实现，并且可以获得所有所需的资源和专业知识。这项工作还将促进氮化物异质结构和相关器件领域的一般知识。广泛的影响：拟议的活动将通过培训学生在不同学科的教育，从外延生长，到量子工程，计算电子学，和太赫兹光子学。为了增加计划的有效性和范围，还强调了本科生、高中实习生和来自弱势背景的学生的参与。最后，拟议的设备有可能在几个高度相关的技术领域产生革命性影响，如安全筛查、制造质量控制和医疗诊断。