CAREER: Deposition and Interface Properties of Metal Oxide Films on GaAs
职业:GaAs 上金属氧化物薄膜的沉积和界面特性
基本信息
- 批准号:0846445
- 负责人:
- 金额:$ 53.07万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing Grant
- 财政年份:2009
- 资助国家:美国
- 起止时间:2009-05-01 至 2015-04-30
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Technical: This project aims to produce fundamental knowledge about the molecular level mechanisms of atomic layer deposition (ALD). In particular, atomic layer deposition of metal oxide films from alkyl amide precursors and water on GaAs surfaces is studied. GaAs due to its intriguing surface chemistry provides a suitable system to test and further our understanding of the molecular level mechanisms and kinetic processes involved in the atomic layer deposition process. Furthermore, its increasing technological importance make such as study very timely as it aims to bridge a gap of fundamental knowledge in the literature. A comprehensive approach that includes both in-situ monitoring of the surface chemistry using infrared spectroscopy as well as extensive ex-situ analysis of the materials and interface properties is used during the research project.Non-technical: The project addresses basic research issues in a topical area of materials science with high technological relevance. Graduate students from diverse backgrounds are trained in an interdisciplinary field, and a much needed interdisciplinary laboratory course in materials characterization is introduced to complement an existing lecture course in the physics of surfaces and interfaces. Undergraduate students from disadvantaged backgrounds, as well as participants of the McNair program at the University of Maryland Baltimore County, are mentored during a summer research program with the goal to encourage their interest in scientific careers.
技术:该项目旨在产生有关原子层沉积(ALD)分子水平机制的基础知识。特别是,原子层沉积的金属氧化物薄膜从烷基酰胺前体和水在GaAs表面上进行了研究。GaAs由于其有趣的表面化学提供了一个合适的系统,以测试和进一步了解分子水平的机制和动力学过程中涉及的原子层沉积过程。此外,其日益增长的技术重要性使得这样的研究非常及时,因为它旨在弥合文献中基础知识的差距。该研究项目采用了一种综合方法,包括使用红外光谱对表面化学进行原位监测,以及对材料和界面特性进行广泛的非原位分析。非技术性:该项目涉及具有高技术相关性的材料科学热门领域的基础研究问题。来自不同背景的研究生在跨学科领域进行培训,并引入了材料表征中急需的跨学科实验室课程,以补充现有的表面和界面物理学讲座课程。来自弱势背景的本科生,以及马里兰州巴尔的摩县大学麦克奈尔项目的参与者,在夏季研究计划期间接受指导,目的是鼓励他们对科学事业的兴趣。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Theodosia Gougousi其他文献
Charge generation during oxidation of thin Hf metal films on silicon
- DOI:
10.1016/j.tsf.2006.02.004 - 发表时间:
2006-08-14 - 期刊:
- 影响因子:
- 作者:
Theodosia Gougousi;David B. Terry;Gregory N. Parsons - 通讯作者:
Gregory N. Parsons
Theodosia Gougousi的其他文献
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{{ truncateString('Theodosia Gougousi', 18)}}的其他基金
Deposition and nonlinear optical properties of transition metal nitride/oxide thin films
过渡金属氮化物/氧化物薄膜的沉积和非线性光学性质
- 批准号:
1905305 - 财政年份:2019
- 资助金额:
$ 53.07万 - 项目类别:
Continuing Grant
Collaborative Research: Surface Engineering and Atomic Layer Deposition of Dielectrics on Two-Dimensional Atomic Crystals for Device Application
合作研究:用于器件应用的二维原子晶体上电介质的表面工程和原子层沉积
- 批准号:
1407677 - 财政年份:2014
- 资助金额:
$ 53.07万 - 项目类别:
Standard Grant
NER: Supercritical Carbon Dioxide Assisted Deposition and Interfacial Properties of Metal Oxide Thin Films
NER:超临界二氧化碳辅助金属氧化物薄膜的沉积和界面性能
- 批准号:
0506690 - 财政年份:2005
- 资助金额:
$ 53.07万 - 项目类别:
Standard Grant
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