CAREER: High Performance Nanowire FETs for Logic and Memory

职业：用于逻辑和内存的高性能纳米线 FET

• 批准号: 0846649
• 负责人: Qiliang Li
• 金额: --
• 依托单位: George Mason University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-07-15 至 2014-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0846649&HistoricalAwards=false
• 关键词: CAREER; Performance; Nanowire; FETs; Logic

CAREER: High Performance Nanowire FETs for Logic and Memory"This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5)."The objective of this research is to design and fabricate high performance nanowire field effect transistors with steep subthreshold slopes and large on-off ratios at low operation voltage, and integrate them for large-scale logic and stand-alone memory applications. The approach is to introduce gate-channel-source coupling in nanowire field effect transistors to achieve steep subthreshold slopes much sharper than the thermodynamic limit of conventional field effect transistors, and develop fast and reliable FLASH-like nanowire non-volatile memory for future, more portable electronics.Intellectual Merit: the proposed research will exploit the inherent advantages of the Schottky-barrier nanowire field effect transistor structure, with the potential to have transformational impact on logic and memory cell design which will remain compatible with semiconductor chip technologies. These new devices will be characterized by much better gate control, faster operation and lower leakage power dissipation at reduced area and cost. Furthermore, very demanding device physics will be carried out to establish the most appropriate structures and operation conditions.Broader Impact: the approach is expected to have substantial broader impact in the quest for new nanoelectronic devices, as it will introduce device structures with operational principles different from conventional devices, while at the same time benefiting from the vast experience with silicon technology. These devices will make urgently needed contributions to semiconductor industry in logic and memory technology. New nano-fabrication technology and nanoelectronic metrology will also be developed during the course of this research. As always, science and engineering education is the main interest and focus of this project.

“该奖项是根据2009年美国复苏和再投资法案（公法111-5）资助的。”本研究的目标是在低工作电压下设计和制造具有陡峭亚阈值斜率和大通断比的高性能纳米线场效应晶体管，并将其集成到大规模逻辑和独立存储应用中。该方法是在纳米线场效应晶体管中引入门-通道-源耦合，以实现比传统场效应晶体管的热力学极限更陡的陡峭亚阈值斜率，并为未来更便携的电子产品开发快速可靠的类flash纳米线非易失性存储器。智力优势：该研究将利用肖特基势垒纳米线场效应晶体管结构的固有优势，具有对逻辑和存储单元设计产生变革性影响的潜力，这将与半导体芯片技术保持兼容。这些新器件的特点是更好的栅极控制，更快的运行速度和更低的泄漏功耗，面积更小，成本更低。此外，将进行非常苛刻的设备物理，以建立最合适的结构和操作条件。更广泛的影响：该方法有望在寻求新的纳米电子器件方面产生实质性的更广泛的影响，因为它将引入与传统器件不同的操作原理的器件结构，同时受益于硅技术的丰富经验。这些器件将为半导体工业在逻辑和存储技术方面做出迫切需要的贡献。在此研究过程中，还将发展新的纳米制造技术和纳米电子计量技术。一如既往，科学和工程教育是这个项目的主要兴趣和重点。