OP: Towards high performance nanowire photonic devices: Novel testing techniques and device structures

摘要标题：走向高性能纳米线光子器件：新颖的测试技术和器件结构摘要非技术性：这项拨款将集中在半导体纳米线的研究和开发上，这种材料的直径只有几十纳米，但长度为微米。半导体纳米线创造了在所有三个维度上构建材料的可能性，在纳米线内具有更大范围的元素和化合物，并通过纳米线的有序阵列和图案。历史地说明了构造用于光子器件(与光一起工作的器件)的半导体材料的重要性。例如，半导体异质结构使固态照明、取代白炽灯和荧光灯的高效发光二极管成为可能(2014年诺贝尔物理学奖)。半导体纳米线要想变得有竞争力，需要克服一些挑战。其一是，目前半导体纳米线的质量远远低于传统的平面材料(半导体按层排列)。在这项资助中，我们将使用一种新的光学技术来解析导线不同部分的纳米线质量，例如侧面、末端、内部。其次，我们将寻求与新型半导体材料组合开发在中红外波长发射的半导体纳米线，例如在纳米线内分层并进一步减小纳米线直径。第三，我们将寻求通过阵列中纳米线的图案化和定位来改变和控制半导体纳米线器件的发光特性。拟议的研究的基本原理是通过确定开发高性能中红外III-V纳米线光子器件所需的关键机制，建立一个强大的科学框架。此外，项目目标与我们更广泛的影响目标是协同作用的，目的是在如何利用物理学、工程学和计算机建模来开发我们在日常生活中使用的技术方面产生更多的公众意识、兴奋和理解。摘要技术：提出了一个多方面的计划，从自下而上、III-V纳米线和纳米线异质结构研究中红外发射器和超材料光学元件。由于能够通过横向膨胀来适应应变，新的材料组合在纳米线中成为可能。与平面材料相比，砷化铟(InAs)/砷化锑铟(InAsSb)超晶格纳米线可以考虑新的合金成分和衬底材料，平面材料是一种很有前途的中红外材料，因为它具有非常小的非辐射Shockley-Read-Hall复合系数，但不幸的是，非辐射俄歇复合系数很高。新的材料组合和纳米线中的横向量子限制为利用能带结构工程抑制俄歇提供了新的可能性。纳米线中载流子的辐射复合将通过改变纳米线的尺寸、图案和周期来调节和控制。中红外III-V纳米线将使用选择性区域外延生长，这是一种精确控制纳米线图案和尺寸的技术。一种新的光学测量技术将被用来在空间上解析纳米线内部的复合系数(Shockley-Read-Hall、Auger、Radiative)。将测量从发光二极管到放大的自发辐射到激光的纳米线发射。纳米线还将作为被动中红外光学元件进行研究，以改善发光二极管的光提取和准直。我们将对纳米线滤光片和二维光子晶体进行建模、生长和测量。

Abstract title: Towards high performance nanowire photonic devices: Novel testing techniques and device structuresAbstract Non-technical: This grant will focus on research and development of semiconductor nanowires, materials with diameters just a few tens of nanometers but lengths of microns. Semiconductor nanowires create the possibility of structuring materials in all three dimensions, with a greater range of elements and compounds within the nanowire, and through ordered arrays and patterns of nanowires. The importance of structuring semiconductor materials for photonic devices (devices that work with light) is illustrated historically. For example, semiconductor heterostructures have made possible solid state lighting, high efficiency light emitting diodes that are replacing incandescent and fluorescent lighting (2014 Nobel Prize in Physics). For semiconductor nanowires to become competitive, a number of challenges need to be overcome. One is that the quality of semiconductor nanowires are currently far below that of conventional planar materials (semiconductors arranged in layers). In this grant, we will use a novel optical technique to resolve the nanowire quality in different parts of the wire, e.g. sides, ends, interior. Second, we will seek to develop semiconductor nanowires that emit at mid-infrared wavelengths with novel semiconductor materials combinations, such as layering within the nanowires and further reducing the nanowire diameter. Third, we will seek to modify and control the light emission characteristics of the semiconductor nanowire devices through patterning and positioning of nanowires in arrays.The rationale for the proposed study is that it will establish a strong scientific framework by identifying the key mechanisms needed to develop high performance mid-infrared III-V nanowire photonic devices. Furthermore, the project goals are synergistic with our broader impacts goal of generating more public awareness, excitement, and understanding in how physics, engineering, and computer modeling can be used to develop technologies that we use in our daily lives.Abstract Technical: A multi-faceted program is proposed to investigate mid-infrared emitters and metamaterial optical components from bottom-up, III-V nanowires and nanowire heterostructures. Due to a capacity to accommodate strain through lateral expansion, new material combinations become possible in nanowires. New alloy compositions and substrate materials can be contemplated in indium arsenide (InAs)/indium arsenide antimonide (InAsSb) superlattice nanowires compared to planar materials, a promising mid-infrared material due to remarkably a small non-radiative Shockley-Read-Hall recombination coefficient but unfortunately high non-radiative Auger recombination coefficient. New material combinations and lateral quantum confinement in nanowires give new possibilities to suppress Auger with bandstructure engineering. Radiative recombination of carriers in nanowires will be modified and controlled by variation of nanowire size, pattern, and periodicity. Mid-infrared III-V nanowires will be grown using selective area epitaxy, a technique giving precise control over nanowire pattern and size. A novel optical measurement technique will be used to spatially resolve recombination coefficients (Shockley-Read-Hall, Auger, radiative) inside nanowires. Nanowire emission from light emitting diodes to amplified spontaneous emission to lasing will be measured. Nanowires will also be investigated as passive mid-infrared optical components to improve light extraction and collimation from light emitting diodes. Nanowire filters and 2D photonic crystals will be modeled, grown, and measured.