OP: Towards high performance nanowire photonic devices: Novel testing techniques and device structures
OP:迈向高性能纳米线光子器件:新颖的测试技术和器件结构
基本信息
- 批准号:1608714
- 负责人:
- 金额:$ 37.49万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2016
- 资助国家:美国
- 起止时间:2016-07-15 至 2019-06-30
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Abstract title: Towards high performance nanowire photonic devices: Novel testing techniques and device structuresAbstract Non-technical: This grant will focus on research and development of semiconductor nanowires, materials with diameters just a few tens of nanometers but lengths of microns. Semiconductor nanowires create the possibility of structuring materials in all three dimensions, with a greater range of elements and compounds within the nanowire, and through ordered arrays and patterns of nanowires. The importance of structuring semiconductor materials for photonic devices (devices that work with light) is illustrated historically. For example, semiconductor heterostructures have made possible solid state lighting, high efficiency light emitting diodes that are replacing incandescent and fluorescent lighting (2014 Nobel Prize in Physics). For semiconductor nanowires to become competitive, a number of challenges need to be overcome. One is that the quality of semiconductor nanowires are currently far below that of conventional planar materials (semiconductors arranged in layers). In this grant, we will use a novel optical technique to resolve the nanowire quality in different parts of the wire, e.g. sides, ends, interior. Second, we will seek to develop semiconductor nanowires that emit at mid-infrared wavelengths with novel semiconductor materials combinations, such as layering within the nanowires and further reducing the nanowire diameter. Third, we will seek to modify and control the light emission characteristics of the semiconductor nanowire devices through patterning and positioning of nanowires in arrays.The rationale for the proposed study is that it will establish a strong scientific framework by identifying the key mechanisms needed to develop high performance mid-infrared III-V nanowire photonic devices. Furthermore, the project goals are synergistic with our broader impacts goal of generating more public awareness, excitement, and understanding in how physics, engineering, and computer modeling can be used to develop technologies that we use in our daily lives.Abstract Technical: A multi-faceted program is proposed to investigate mid-infrared emitters and metamaterial optical components from bottom-up, III-V nanowires and nanowire heterostructures. Due to a capacity to accommodate strain through lateral expansion, new material combinations become possible in nanowires. New alloy compositions and substrate materials can be contemplated in indium arsenide (InAs)/indium arsenide antimonide (InAsSb) superlattice nanowires compared to planar materials, a promising mid-infrared material due to remarkably a small non-radiative Shockley-Read-Hall recombination coefficient but unfortunately high non-radiative Auger recombination coefficient. New material combinations and lateral quantum confinement in nanowires give new possibilities to suppress Auger with bandstructure engineering. Radiative recombination of carriers in nanowires will be modified and controlled by variation of nanowire size, pattern, and periodicity. Mid-infrared III-V nanowires will be grown using selective area epitaxy, a technique giving precise control over nanowire pattern and size. A novel optical measurement technique will be used to spatially resolve recombination coefficients (Shockley-Read-Hall, Auger, radiative) inside nanowires. Nanowire emission from light emitting diodes to amplified spontaneous emission to lasing will be measured. Nanowires will also be investigated as passive mid-infrared optical components to improve light extraction and collimation from light emitting diodes. Nanowire filters and 2D photonic crystals will be modeled, grown, and measured.
摘要:非技术:该资助将重点研究和开发半导体纳米线,材料直径只有几十纳米,但长度为微米。半导体纳米线创造了在所有三个维度上构建材料的可能性,在纳米线中有更大范围的元素和化合物,并通过有序的纳米线阵列和模式。结构半导体材料对光子器件(与光一起工作的器件)的重要性在历史上得到了说明。例如,半导体异质结构使固态照明成为可能,高效率的发光二极管正在取代白炽灯和荧光灯(2014年诺贝尔物理学奖)。为了使半导体纳米线具有竞争力,需要克服许多挑战。一是目前半导体纳米线的质量远低于传统的平面材料(半导体分层排列)。在这项资助中,我们将使用一种新颖的光学技术来解决纳米线不同部分的质量,例如侧面,末端,内部。其次,我们将寻求利用新颖的半导体材料组合,如在纳米线内分层和进一步减小纳米线直径,开发发射中红外波长的半导体纳米线。第三,我们将寻求通过在阵列中对纳米线进行图像化和定位来修改和控制半导体纳米线器件的发光特性。提出这项研究的基本原理是,通过确定开发高性能中红外III-V纳米线光子器件所需的关键机制,它将建立一个强大的科学框架。此外,项目目标与我们更广泛的影响目标是协同的,即在如何使用物理、工程和计算机建模来开发我们日常生活中使用的技术方面,产生更多的公众意识、兴奋和理解。摘要技术方面:提出了从自下而上、III-V纳米线和纳米线异质结构研究中红外发射体和超材料光学元件的多角度方案。由于能够通过横向膨胀来适应应变,纳米线中的新材料组合成为可能。与平面材料相比,砷化铟(InAs)/砷化锑化铟(InAsSb)超晶格纳米线可以考虑新的合金成分和衬底材料。砷化铟(InAs)/砷化锑化铟(InAsSb)超晶格纳米线是一种很有前途的中红外材料,因为它的非辐射肖克利-里德-霍尔复合系数非常小,但不幸的是,它的非辐射俄歇复合系数很高。新的材料组合和纳米线中的横向量子约束为带结构工程抑制俄歇提供了新的可能性。纳米线中载流子的辐射复合将受到纳米线尺寸、图案和周期变化的影响。中红外III-V纳米线将使用选择性区域外延生长,这是一种精确控制纳米线图案和尺寸的技术。一种新的光学测量技术将用于空间分辨纳米线内部的复合系数(肖克利-里德-霍尔、俄歇、辐射)。将测量从发光二极管到放大自发发射到激光的纳米线发射。纳米线还将作为被动中红外光学元件进行研究,以改善发光二极管的光提取和准直。纳米线滤波器和二维光子晶体将建模,生长和测量。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Fatima Toor其他文献
Building Inclusive Healthcare for LGBTQ+ Youth: Improving the Collection and Utilization of Patients’ Sexual Orientation and Gender Identity (SOGI) Information, Preferred Names and Gender Pronouns in a Pediatric Clinic
为 LGBTQ+ 青少年打造包容性医疗保健:改善儿科诊所中患者性取向和性别认同 (SOGI) 信息、首选姓名和性别代词的收集和利用
- DOI:
- 发表时间:
2020 - 期刊:
- 影响因子:0
- 作者:
Scott K. Jelinek;Fatima Toor;K. Becker;Kelly M. Smith;B. Schindel;Nicholas A. Puoplo;Camille Hébert;Bari Winik;Nicola Mann;Lauren Ambler;Carolyn Birbiglia;Arnoldys Stengel;Laura Hodo;Christopher Tenore;Cynthia Katz - 通讯作者:
Cynthia Katz
Modeling for neurosurgical laser interstitial thermal therapy with and without intracranial recording electrodes
- DOI:
10.1016/j.crneur.2024.100139 - 发表时间:
2024-01-01 - 期刊:
- 影响因子:
- 作者:
Daniel W. Keefe;David T. Christianson;Greyson W. Davis;Hiroyuki Oya;Matthew A. Howard;Christopher I. Petkov;Fatima Toor - 通讯作者:
Fatima Toor
Fatima Toor的其他文献
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{{ truncateString('Fatima Toor', 18)}}的其他基金
I-Corps: Customer discovery for silicon nanowire biosensor
I-Corps:硅纳米线生物传感器的客户发现
- 批准号:
1643115 - 财政年份:2016
- 资助金额:
$ 37.49万 - 项目类别:
Standard Grant
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