Collaborative Research: Studies of Electron Injection-Induced Effects in ZnO-based Materials and Device Structures

合作研究：ZnO基材料和器件结构中电子注入诱导效应的研究

• 批准号: 0900978
• 负责人: Jianlin Liu
• 金额: $ 24.49万
• 依托单位: University of California-Riverside
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-08-01 至 2013-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0900978&HistoricalAwards=false
• 关键词: Collaborative; Research; Studies; Electron; Injection

ECCS 0900971/0900978Collaborative Research: Studies of Electron Injection-Induced Effects in ZnO-based Materials and Device Structures With recent advances in ZnO epitaxial growth and processing, it is very likely that efficient minority carrier devices, such as light emitting diodes, laser diodes and transparent p-n junctions, can be achieved in the near future. Because the minority carrier diffusion length - one of the critical parameters in defining p-n junction performance - is usually less than 1 micron in ZnO-based semiconductors, it is imperative to find ways of its improvement. The principal investigators¡¦ recent findings indicate that the minority carrier diffusion length can be elongated in p-type ZnO due to electron injection. While the observed novel effect was attributed to electron trapping on impurity-related levels, the role of extended and point defects as well as of surface states was not completely excluded. The intellectual merit of this research is in exploration of electron injection¡¦s impact on minority carrier transport and recombination in ZnO and related compounds. A wide range of epitaxial antimony-doped p-type ZnO and p-type Zn1-xMgxO (x ?T 0.15) layers will be studied. In addition, the minority carrier transport in p-ZnO doped with other impurities such as phosphorus, or nitrogen, as well as in p-type Zn1-xCdxO (x ?T 0.15) and Zn(Mg/Cd)O/ZnO superlattices, will be investigated. Magnesium (Cadmium) incorporation into the ZnO lattice and barrier and well presence in the superlattices create electron injection conditions different from that in ZnO. To fully understand the effects of electron injection in Zn(Mg/Cd)O and to find conditions under which they can be employed, systematic electrical and optical studies will be carried out in the representative range of device structures: p-n junction and Schottky diodes. Electrical testing, combined with Electron Beam-Induced Current measurements, will be performed in-situ in a Scanning Electron Microscope. These measurements will be complemented with in-situ cathodoluminescence as well as spectral photoresponse and transient photocurrent measurements.The effects of electron injection to be investigated are likely related to concentration of dopants, epitaxial layer quality and composition. Therefore, the study of materials with variations in these properties is necessary. The growth of these materials and the fabrication and characterization of their device structures are assured through the interactive collaboration between the groups at the University of Central Florida and the University of California, Riverside. The practical significance of the proposed research is in performance control of p-n junction charge collection semiconductor devices, such as photodetectors, in which the minority carrier diffusion length plays a critical role. A several-fold increase in the photodetector¡¦s quantum efficiency is anticipated relative to the current state-of-the-art of ~ 15-20%. The broader impact of this collaborative project is in better understanding the fundamentals of point and extended defects in ZnO-based semiconductors, creating a partnership between two universities, and integrating research and education at the graduate, undergraduate and K-12 levels, as expressed in participation of underrepresented Ph.D. students, several undergraduates and local high school students in the proposed research. These students will build skills in collaborating on a long-term, long-distance academic project, as they participate in the proposed research.

ECCS 0900971/0900978计算研究：电子注射诱导的基于ZnO的材料和设备结构的影响，随着ZnO上皮上的增长和处理的最新进展，有效的少数族裔载体设备很可能会使光DIODES，LASER SISSION，LASER RISSITION，LASER PRISTION，LASER PROSSITION，CARNECE PR-N-FROCANED INCANCE AD CANCE AD CANCE ACH INDE ACH INCAINS CANCE ACH CANCE IN CANCE ACH CANCE ACH INDEAS CANCE ACH INCAINSIONS。因为在基于ZnO的半导体中，少数载体扩散长度（定义P -N连接性能的关键参数之一）通常小于1微米，因此必须找到改进的方法。主要研究人员最近的发现表明，由于电子注入，少数载体扩散长度可以在p型ZnO中拉长。虽然观察到的新效果归因于电子捕获在与杂质相关的水平上，但延伸和点缺陷以及表面状态的作用尚未完全排除。这项研究的智力优点是探索电子注射对ZnO及相关化合物中少数族裔载体运输和重组的影响。将研究各种外观胰胰蛋白掺杂的P型ZnO和P型ZN1-XMGXO（X？t 0.15）层。此外，将研究少数族载体的运输，这些杂质掺杂了磷或氮，以及p型Zn1-XCDXO（X？t 0.15）和Zn（mg/cd）O/ZnO超级层次。镁（镉）保险进入ZnO晶格和障碍物，并在超晶格中的井中产生了电子注入条件，与ZnO不同。为了充分了解Zn（mg/cd）O中电子注射的影​​响，并找到可以使用它们的条件，将在代表性的设备结构范围内进行系统的电气和光学研究：P-N结和Schottky差异。将在扫描电子显微镜中进行电气测试，并结合电子束诱导的电流测量值。这些测量将通过原位的阴极发光以及光谱光响应和瞬时光电流测量完成。进行研究的电子注射的影​​响可能与掺杂剂的浓度，外部层层质量和组成有关。因此，必须研究这些特性方面有变化的材料。这些材料的增长以及其设备结构的制造和表征是通过佛罗里达大学和加利福尼亚大学里弗赛德分校的群体之间的互动合作来假定的。拟议的研究的实际意义在于P-N连接电荷收集半导体设备的性能控制，例如光电遗传学，其中少数载体扩散长度起着至关重要的作用。相对于当前的最新面积约为15-20％，光电探测器的量子效率将增加几倍。该协作项目的更广泛的影响是更好地了解基于ZnO的半导体的观点和扩展缺陷的基本原理，在两所大学之间建立了伙伴关系，并在毕业生，本科和K-12水平的研究和教育中融合了研究和教育，这在参与不足的Ph.D.D.D.D.D.D.D.D.D.D.D.D.D.D.D.D.D.D.D。在拟议的研究中，学生，几名大学生和当地的高中生。这些学生将在参与拟议的研究时建立长期，长途学术项目的协作技能。