Understanding Molecular Reactivity at Semiconductor Surfaces

了解半导体表面的分子反应性

• 批准号: 0910717
• 负责人: Stacey Bent
• 金额: $ 42万
• 依托单位: Stanford University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-09-15 至 2012-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0910717&HistoricalAwards=false
• 关键词: Understanding; Molecular; Reactivity; Semiconductor; Surfaces

Professor Stacey F. Bent of Stanford University is supported by the Analytical and Surface Chemistry Program in the Division of Chemistry to study the reactivity of bifunctional molecules with Ge (100) and Si (100) semiconductor surfaces. Attachment, displacement, and layer-by-layer surface modification methods will be explored. A combination of experimental and theoretical methods, including surface infrared, x-ray photoelectron spectroscopy, thermal desorption spectrometry, and density functional theory calculations, will be used to study the effect of electronic, steric, bond strain, proximity, enthalpy and entropy parameters on the reactivity and competitive binding of bifunctional molecules at the surface. The proposed research aims for a better understanding of organic attachment to semiconductor surfaces. Modifying the interfacial properties of semiconductor systems by organic layers plays an important role in a variety of applications, such as nanowire and quantum dot passivation, templated assembly, MEMS devices, sensors, and organic photovoltaics. The educational activities involve training of graduate and undergraduate students in state-of-the-art surface analysis methods.

斯坦福大学的Stacey F.Bent教授得到化学系分析和表面化学计划的支持，研究双功能分子与Ge(100)和Si(100)半导体表面的反应性。将探索附着法、置换法和逐层表面改性方法。采用实验和理论相结合的方法，包括表面红外光谱、X射线光电子能谱、热脱附谱和密度泛函理论计算，研究了电子、空间、键应变、近邻、热焓和熵等参数对双功能分子在表面的反应性和竞争性结合的影响。这项拟议的研究旨在更好地了解半导体表面的有机附着。有机层修饰半导体系统的界面性质在纳米线和量子点钝化、模板化组装、MEMS器件、传感器和有机光伏等领域有着重要的应用。教育活动包括对研究生和本科生进行最先进的表面分析方法的培训。