Chemical Strategies for Organic Functionalization of Semiconductors
Chemical Strategies for Organic Functionalization of Semiconductors
批准号:
0245260
负责人:
Stacey Bent
金额:
$41.5万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2003
资助国家:
美国
项目状态:
已结题
起止时间:
2003-04-15 至 2006-12-31
中文摘要
该研究项目由分析和表面化学计划资助,致力于实现半导体和有机薄膜材料的集成所需的基础化学。斯坦福大学化学工程系的本特教授和她的同事正在开发控制有机分子与半导体材料附着的合成策略。正在研究第一层附着的方法,以及将第二层分子附着到有机界面的一般策略。研究的第三个重点是这些半导体-有机界面的受控图案化。这项工作的结果为开发下一代分子电子器件的过程化学提供了必要的基本理解。在分析和表面化学计划的支持下,斯坦福大学的本特教授和她的合作者正在探索将有机层附着到硅和锗表面的合成策略。利用标准有机合成中开发的方法,他们正在研究基于真空的方法,用一系列有机分子对半导体表面进行受控修饰。本研究结果为分子电子器件的加工提供了依据。
英文摘要
AbstractCHE-0245260Bent/StanfordThis research project, supported in the Analytical and Surface Chemistry Program, addresses the fundamental chemistry needed to allow the integration of semiconductor and organic thin film materials. Synthetic strategies for the controlled attachment of organic molecules to semiconductor materials are being developed by Professor Bent and her coworkers in the Chemical Engineering Department at Stanford University. Approaches to first layer attachment are being examined, along with general strategies for the attachment of second layer molecules to the organic interface. The third focus of the research is on the controlled patterning of these semiconductor-organic interfaces. The results of this work provide the fundamental understanding necessary for the development of the processing chemistry for the next generation of molecular electronic devices.With the support of the Analytical and Surface Chemistry Program, Professor Bent and her collaborators at Stanford University are exploring synthetic strategies for the attachment of organic layers to silicon and germanium surfaces. Using approaches developed in standard organic synthesis, they are investigating vacuum based methods for the controlled modification of semiconductor surfaces with a range of organic molecules. The results of this research provide the basis for the processing of molecular electronic devices.
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Computer and Information Science and Engineering Graduate Fellowships (CSGrad4US)
-
批准号:2240191
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项目类别:Fellowship Award
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资助金额:$13.8万
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财政年份:2022
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负责人:Stacey Bent
-
依托单位:
Graduate Research Fellowship Program (GRFP)
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批准号:2146755
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项目类别:Fellowship Award
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资助金额:$1930.99万
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财政年份:2021
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负责人:Stacey Bent
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依托单位:
Nanoscale Control over Surface Functionalization by Molecular Layer Deposition
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批准号:1904108
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项目类别:Standard Grant
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资助金额:$47.55万
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财政年份:2019
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负责人:Stacey Bent
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依托单位:
Graduate Research Fellowship Program (GRFP)
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批准号:1656518
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项目类别:Fellowship Award
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资助金额:$1076.73万
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财政年份:2016
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负责人:Stacey Bent
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依托单位:
Novel Chemistries for Nanoscale Surface Functionalization by Molecular Layer Deposition
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批准号:1607339
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项目类别:Standard Grant
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资助金额:$45.0万
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财政年份:2016
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负责人:Stacey Bent
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依托单位:
Controlling Surface Functionalization at the Molecular and Nanoscale Level Via Molecular Layer Deposition
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批准号:1213879
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项目类别:Continuing Grant
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资助金额:$44.1万
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财政年份:2012
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负责人:Stacey Bent
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依托单位:
Phase segregated inorganic heterstructures for low cost, high efficiency photovoltaics
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批准号:0930098
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项目类别:Standard Grant
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资助金额:$32.5万
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财政年份:2009
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负责人:Stacey Bent
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依托单位:
Understanding Molecular Reactivity at Semiconductor Surfaces
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批准号:0910717
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项目类别:Standard Grant
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资助金额:$42.0万
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财政年份:2009
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负责人:Stacey Bent
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依托单位:
Chemical Strategies for Organic Functionalization of Semiconductors
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批准号:0615087
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项目类别:Standard Grant
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资助金额:$0.0万
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财政年份:2006
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负责人:Stacey Bent
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依托单位:
Developing Organic Synthetic Approaches to Electronic Interface Formation
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批准号:9900041
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项目类别:Continuing Grant
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资助金额:$36.0万
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财政年份:1999
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负责人:Stacey Bent
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依托单位:
CAREER: Surface Chemistry in Materials Processing
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批准号:9896333
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项目类别:Continuing Grant
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资助金额:$10.85万
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财政年份:1998
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负责人:Stacey Bent
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依托单位:
CAREER: Surface Chemistry in Materials Processing
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批准号:9501774
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项目类别:Continuing Grant
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资助金额:$21.35万
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财政年份:1995
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负责人:Stacey Bent
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依托单位:
国内基金
海外基金
Scalable Learning and Optimization: High-dimensional Models and Online Decision-Making Strategies for Big Data Analysis
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批准号:--
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项目类别:合作创新研究团队
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资助金额:--
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批准年份:2024
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负责人:姚韬
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依托单位: