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Chemical Strategies for Organic Functionalization of Semiconductors

半导体有机功能化的化学策略

基本信息

批准号：
0245260
负责人：
Stacey Bent
金额：
$ 41.5万
依托单位：
Stanford University
依托单位国家：
美国
项目类别：
Continuing Grant
财政年份：
2003
资助国家：
美国
起止时间：
2003-04-15 至 2006-12-31
项目状态：
已结题

来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=0245260&HistoricalAwards=false
关键词：
Chemical Strategies Organic Functionalization Semiconductors

项目摘要

AbstractCHE-0245260Bent/StanfordThis research project, supported in the Analytical and Surface Chemistry Program, addresses the fundamental chemistry needed to allow the integration of semiconductor and organic thin film materials. Synthetic strategies for the controlled attachment of organic molecules to semiconductor materials are being developed by Professor Bent and her coworkers in the Chemical Engineering Department at Stanford University. Approaches to first layer attachment are being examined, along with general strategies for the attachment of second layer molecules to the organic interface. The third focus of the research is on the controlled patterning of these semiconductor-organic interfaces. The results of this work provide the fundamental understanding necessary for the development of the processing chemistry for the next generation of molecular electronic devices.With the support of the Analytical and Surface Chemistry Program, Professor Bent and her collaborators at Stanford University are exploring synthetic strategies for the attachment of organic layers to silicon and germanium surfaces. Using approaches developed in standard organic synthesis, they are investigating vacuum based methods for the controlled modification of semiconductor surfaces with a range of organic molecules. The results of this research provide the basis for the processing of molecular electronic devices.

Bent/StanfordThis研究项目，在分析和表面化学计划的支持下，解决了允许半导体和有机薄膜材料集成所需的基本化学。斯坦福大学化学工程系的本特教授和她的同事们正在开发有机分子与半导体材料可控连接的合成策略。第一层附着的方法正在研究中，沿着与第二层分子附着到有机界面的一般策略。研究的第三个重点是这些生物有机界面的受控图案。这项工作的结果为下一代分子电子器件的加工化学的发展提供了必要的基本理解。在分析和表面化学计划的支持下，斯坦福大学的Bent教授和她的合作者正在探索将有机层附着到硅和锗表面的合成策略。使用标准有机合成中开发的方法，他们正在研究基于真空的方法，用于用一系列有机分子对半导体表面进行可控改性。本研究结果为分子电子器件的加工提供了依据。