CAREER: Surface Chemistry in Materials Processing
CAREER: Surface Chemistry in Materials Processing
批准号:
9501774
负责人:
Stacey Bent
金额:
$21.35万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1995
资助国家:
美国
项目状态:
已结题
起止时间:
1995-07-01 至 1998-08-28
中文摘要
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英文摘要
9501774 Bent This career development project describes research and education thrusts to be implemented over the next five years. It includes the development of a research program that addresses a molecular-level understanding of surface chemical processes that describe microelectronics materials fabrication processes such as chemical vapor deposition, chemical etching, and lithography. The education thrusts include focusing on the concepts of "connected curriculum" and "active learning." The goal is to develop instructional methods and a novel curriculum that allows for students to actively learn material which they see as an integral part of the world around them. %%% This award provides NSF support for a junior faculty member to develop a full, balanced academic career in areas of science and education of high priority. ***
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Computer and Information Science and Engineering Graduate Fellowships (CSGrad4US)
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批准号:2240191
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项目类别:Fellowship Award
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资助金额:$13.8万
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财政年份:2022
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负责人:Stacey Bent
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依托单位:
Graduate Research Fellowship Program (GRFP)
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批准号:2146755
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项目类别:Fellowship Award
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资助金额:$1930.99万
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财政年份:2021
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负责人:Stacey Bent
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依托单位:
Nanoscale Control over Surface Functionalization by Molecular Layer Deposition
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批准号:1904108
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项目类别:Standard Grant
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资助金额:$47.55万
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财政年份:2019
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负责人:Stacey Bent
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依托单位:
Graduate Research Fellowship Program (GRFP)
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批准号:1656518
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项目类别:Fellowship Award
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资助金额:$1076.73万
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财政年份:2016
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负责人:Stacey Bent
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依托单位:
Novel Chemistries for Nanoscale Surface Functionalization by Molecular Layer Deposition
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批准号:1607339
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项目类别:Standard Grant
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资助金额:$45.0万
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财政年份:2016
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负责人:Stacey Bent
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依托单位:
Controlling Surface Functionalization at the Molecular and Nanoscale Level Via Molecular Layer Deposition
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批准号:1213879
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项目类别:Continuing Grant
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资助金额:$44.1万
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财政年份:2012
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负责人:Stacey Bent
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依托单位:
Phase segregated inorganic heterstructures for low cost, high efficiency photovoltaics
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批准号:0930098
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项目类别:Standard Grant
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资助金额:$32.5万
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财政年份:2009
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负责人:Stacey Bent
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依托单位:
Understanding Molecular Reactivity at Semiconductor Surfaces
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批准号:0910717
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项目类别:Standard Grant
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资助金额:$42.0万
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财政年份:2009
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负责人:Stacey Bent
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依托单位:
Chemical Strategies for Organic Functionalization of Semiconductors
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批准号:0615087
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项目类别:Standard Grant
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资助金额:$0.0万
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财政年份:2006
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负责人:Stacey Bent
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依托单位:
Chemical Strategies for Organic Functionalization of Semiconductors
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批准号:0245260
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项目类别:Continuing Grant
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资助金额:$41.5万
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财政年份:2003
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负责人:Stacey Bent
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依托单位:
Developing Organic Synthetic Approaches to Electronic Interface Formation
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批准号:9900041
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项目类别:Continuing Grant
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资助金额:$36.0万
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财政年份:1999
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负责人:Stacey Bent
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依托单位:
CAREER: Surface Chemistry in Materials Processing
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批准号:9896333
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项目类别:Continuing Grant
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资助金额:$10.85万
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财政年份:1998
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负责人:Stacey Bent
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依托单位:
国内基金
海外基金
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全空间中临界Surface Quasi-geostrophic方程的全局吸引子及其分形维数
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Nano/Micro-surface pattern的摩擦特性研究
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