Developing Organic Synthetic Approaches to Electronic Interface Formation
Developing Organic Synthetic Approaches to Electronic Interface Formation
批准号:
9900041
负责人:
Stacey Bent
金额:
$36.0万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1999
资助国家:
美国
项目状态:
已结题
起止时间:
1999-08-01 至 2003-02-28
中文摘要
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英文摘要
This multidisciplinary research project, which is supported jointly by Analytical and Surface Chemistry in the Chemistry Division, Solid State Chemistry in the Division of Materials Research, and the Office of Multidisciplinary Activities, concerns the organic-semiconductor interface. Using well-established methods of synthetic organic chemistry, primarily Diels-Alder and related chemistry, Professor Bent and her colleagues at Stanford University are fashioning organic-semiconductor interfaces. Elaboration of the organic interface is carried out, following the anchoring of reactive species on the Si(100) or Ge(100) surface. The work explores the mechanism of this chemistry, and considers the use of lithographic methods to extend these ideas to the construction of organic based electronic devices. These hybrid organic-semiconductor materials show great promise for application in the next generation of electronic and optoelectronic devices.The interface between organic thin films and semiconductor substrates is becoming more and more important as state of the art organic based electronic devices are conceived and implemented. This research project focuses on understanding the chemistry of this important interface. Professor Bent and her coworkers at Stanford University are developing this chemistry based on well-known methods of double bond activation, and are using this approach to develop more robust processing methods for this promising generation of new electronic devices.
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Computer and Information Science and Engineering Graduate Fellowships (CSGrad4US)
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批准号:2240191
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项目类别:Fellowship Award
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资助金额:$13.8万
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财政年份:2022
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负责人:Stacey Bent
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依托单位:
Graduate Research Fellowship Program (GRFP)
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批准号:2146755
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项目类别:Fellowship Award
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资助金额:$1930.99万
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财政年份:2021
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负责人:Stacey Bent
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依托单位:
Nanoscale Control over Surface Functionalization by Molecular Layer Deposition
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批准号:1904108
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项目类别:Standard Grant
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资助金额:$47.55万
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财政年份:2019
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负责人:Stacey Bent
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依托单位:
Graduate Research Fellowship Program (GRFP)
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批准号:1656518
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项目类别:Fellowship Award
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资助金额:$1076.73万
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财政年份:2016
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负责人:Stacey Bent
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依托单位:
Novel Chemistries for Nanoscale Surface Functionalization by Molecular Layer Deposition
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批准号:1607339
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项目类别:Standard Grant
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资助金额:$45.0万
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财政年份:2016
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负责人:Stacey Bent
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依托单位:
Controlling Surface Functionalization at the Molecular and Nanoscale Level Via Molecular Layer Deposition
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批准号:1213879
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项目类别:Continuing Grant
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资助金额:$44.1万
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财政年份:2012
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负责人:Stacey Bent
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依托单位:
Phase segregated inorganic heterstructures for low cost, high efficiency photovoltaics
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批准号:0930098
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项目类别:Standard Grant
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资助金额:$32.5万
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财政年份:2009
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负责人:Stacey Bent
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依托单位:
Understanding Molecular Reactivity at Semiconductor Surfaces
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批准号:0910717
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项目类别:Standard Grant
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资助金额:$42.0万
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财政年份:2009
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负责人:Stacey Bent
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依托单位:
Chemical Strategies for Organic Functionalization of Semiconductors
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批准号:0615087
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项目类别:Standard Grant
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资助金额:$0.0万
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财政年份:2006
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负责人:Stacey Bent
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依托单位:
Chemical Strategies for Organic Functionalization of Semiconductors
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批准号:0245260
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项目类别:Continuing Grant
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资助金额:$41.5万
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财政年份:2003
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负责人:Stacey Bent
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依托单位:
CAREER: Surface Chemistry in Materials Processing
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批准号:9896333
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项目类别:Continuing Grant
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资助金额:$10.85万
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财政年份:1998
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负责人:Stacey Bent
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依托单位:
CAREER: Surface Chemistry in Materials Processing
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批准号:9501774
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项目类别:Continuing Grant
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资助金额:$21.35万
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财政年份:1995
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负责人:Stacey Bent
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依托单位:
海外基金