Mechanism-Based Approaches for CVD/ALD of Cu Barriers

该研究奖在无机、生物无机和有机金属化学项目中支持佛罗里达大学的Lisa McElwee-White教授和Tim Anderson教授的工作，以开发用于制造先进集成电路的Cu金属化屏障材料薄膜的生长工艺。最初的目标材料是钌，它可以在界面层中用于无籽铜金属化。基于机制的设计与计算化学相结合，可以在合成前对含钌薄膜生长前体进行评估。一个重要的方面是使用替代前体递送系统设计的所有分子独立的挥发性，从而扩大了可能的前体的范围。在制备潜在前体后，快速筛选最有希望的候选物进行薄膜沉积和表征。与工业界的合作促进了工艺开发和优化，包括反应器建模。研究生在化学、化学工程和材料科学领域接受跨学科团队解决问题的培训。通过行业实习、本科生研究人员指导以及与行业研究人员的互动，拓宽学生的视野。其中一位pi （Anderson）在过去6年的国家会议上为新的和未来的教师提供了一个关于职业发展的研讨会，现在正在调整以向化学教师展示。薄膜沉积是一项关键的技术能力。创新往往依赖于沉积具有非常特殊的成分、表面形态、微观结构、厚度和界面化学性质的薄膜的能力。开发一种沉积铜金属化阻挡材料的工艺将解决当前先进集成电路制造中的一个挑战。

This Research award in the Inorganic, Bioinorganic and Organometallic Chemistry program supports work by Professors Lisa McElwee-White and Tim Anderson at the University of Florida to develop processes for the growth of thin films of barrier material for Cu metallization used in the manufacture of advanced integrated circuits. The initial target material is ruthenium, which can serve in interfacial layers for seedless Cu metallization. Mechanism-based design accompanied by computational chemistry allows evaluation of Ru-containing film growth precursors before synthesis. An important aspect is the use of alternative precursor delivery systems designed for all molecules independent of volatility, thus expanding the range of possible precursors. Following preparation of potential precursors, rapid screening selects the most promising candidates for film deposition and characterization. Collaboration with industry facilitates process development and optimization including reactor modeling. Graduate students are trained in interdisciplinary team-based problem solving in chemistry, chemical engineering and materials science. Industrial internships, mentoring of undergraduate researchers and interactions with industrial research personnel are used to broaden the students' perspectives. A workshop that one of the PIs (Anderson) has presented on career development for new and prospective faculty for the last 6 years at national meetings is being adapted for presentation to chemistry faculty. The deposition of thin films is a key technological capability. Innovation often relies on the ability to deposit films with very specific composition, surface morphology, microstructure, thickness, and interfacial chemistry. Developing a process for deposition of a barrier material for Cu metallization will address a current challenge in the manufacture of advanced integrated circuits.