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Alternative Chemistries for Barrier Materials in Cu Metallization

Alternative Chemistries for Barrier Materials in Cu Metallization
铜金属化中阻挡材料的替代化学物质
批准号:
0304810
负责人:
Lisa McElwee-White
金额:
$236.7万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2003
资助国家:
美国
项目状态:
已结题
起止时间:
2003-09-01 至 2009-08-31

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中文摘要
翻译
佛罗里达大学化学系的 Lisa McElwee-White、化学工程系的 Timothy J. Anderson、材料科学与工程系的 David P. Norton 与英特尔公司的 Steven W. Johnston、韩国成均馆大学的 Sung Min Cho 和佛罗里达大学材料科学与工程系的 Karin Pruessner 合作,获得了化学合作研究项目的奖项,该项目的资金由化学系、物理系、分子、细胞生物学司和多学科活动办公室。 这个多方面的团队将研究新型扩散势垒材料,这些材料对于铜扩散比氮化钛更稳定,适用于未来几代集成电路。该合作项目涉及制备用于 WNx 的金属有机化学气相沉积 (MOCVD) 和原子层沉积 (ALD) 的单源前驱体,然后筛选前驱体、CVD 和 ALD 生长研究以及沉积材料的表征。 MOCVD 和物理气相沉积 (PVD) WNx 薄膜中的微观结构和铜扩散的比较研究将有助于评估它们在阻隔应用中的潜力。电子行业的一个关键问题是开发合适的防止铜扩散的阻隔材料以及将其沉积在高深宽比通孔中的方法,将使用多学科方法进行研究。这种合作将前体化学开发、沉积工艺改进、材料表征、计算建模和器件制造联系起来。除了新材料之外,调查人员还将调查 WNx。 学生和博士后同事将获得超出其研究生学习学科范围的基于团队的培训和解决问题的技能。此外,与英特尔的互动将拓宽他们在学术研究之外的视野。这种合作有着反映当地人口多样性的历史。教育模块开发和对 8-12 年级女生的推广等活动将鼓励其他人参与相关科学领域。
英文摘要
Lisa McElwee-White, Department of Chemistry, Timothy J. Anderson, Department of Chemical Engineering, David P. Norton, Department of Materials Science and Engineering, all of the University of Florida, in collaboration with Steven W. Johnston, Intel Corporation, Sung Min Cho, Sungkyunkwan University, Korea, and Karin Pruessner, Materials Science and Engineering, University of Florida are funded with an award from the Collaborative Research in Chemistry Program with funds provided by the Division of Chemistry, the Division of Physics, the Division of Molecular, Cellular Biology and the Office of Multidisciplinary Activities. This multifaceted team will investigate newdiffusion barrier materials that are more stable toward copper diffusion than titanium nitride for future generations of integrated circuits. This collaborative project involves preparation of single source precursors for metal-organic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD) of WNx followed by screening of the precursors, CVD and ALD growth studies, and characterization of the deposited material. Comparative studies of microstructure and Cu diffusion in MOCVD and physical vapor deposition (PVD) WNx films will allow evaluation of their potential in barrier applications.A critical problem in the electronics industry, development of a suitable barrier material against Cu diffusion and a method of depositing it in high aspect ratio vias, will be investigated using a multidisciplinary approach This collaboration connects precursor chemistry development, deposition process refinement, materials characterization, computational modeling and device fabrication. The investigators will investigate WNx in addition to new materials. Students and postdoctoral associates will gain exposure to team-based training and problem solving skills that reach outside their own disciplines of graduate study. In addition, the interaction with Intel will broaden their perspectives beyond academic research. This collaboration has a history of diversity that reflects the local population. Activities such as educational module development and outreach to grade 8-12 girls will encourage participation by others in related areas of science.
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