Alternative Chemistries for Barrier Materials in Cu Metallization

铜金属化中阻挡材料的替代化学物质

• 批准号: 0304810
• 负责人: Lisa McElwee-White
• 金额: $ 236.7万
• 依托单位: University of Florida
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2003
• 资助国家: 美国
• 起止时间: 2003-09-01 至 2009-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0304810&HistoricalAwards=false
• 关键词: Alternative; Chemistries; Barrier; Materials; Cu

Lisa McElwee-White, Department of Chemistry, Timothy J. Anderson, Department of Chemical Engineering, David P. Norton, Department of Materials Science and Engineering, all of the University of Florida, in collaboration with Steven W. Johnston, Intel Corporation, Sung Min Cho, Sungkyunkwan University, Korea, and Karin Pruessner, Materials Science and Engineering, University of Florida are funded with an award from the Collaborative Research in Chemistry Program with funds provided by the Division of Chemistry, the Division of Physics, the Division of Molecular, Cellular Biology and the Office of Multidisciplinary Activities. This multifaceted team will investigate newdiffusion barrier materials that are more stable toward copper diffusion than titanium nitride for future generations of integrated circuits. This collaborative project involves preparation of single source precursors for metal-organic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD) of WNx followed by screening of the precursors, CVD and ALD growth studies, and characterization of the deposited material. Comparative studies of microstructure and Cu diffusion in MOCVD and physical vapor deposition (PVD) WNx films will allow evaluation of their potential in barrier applications.A critical problem in the electronics industry, development of a suitable barrier material against Cu diffusion and a method of depositing it in high aspect ratio vias, will be investigated using a multidisciplinary approach This collaboration connects precursor chemistry development, deposition process refinement, materials characterization, computational modeling and device fabrication. The investigators will investigate WNx in addition to new materials. Students and postdoctoral associates will gain exposure to team-based training and problem solving skills that reach outside their own disciplines of graduate study. In addition, the interaction with Intel will broaden their perspectives beyond academic research. This collaboration has a history of diversity that reflects the local population. Activities such as educational module development and outreach to grade 8-12 girls will encourage participation by others in related areas of science.

佛罗里达大学化学系的丽莎麦克尔维-怀特，化学工程系的蒂莫西J.安德森，材料科学与工程系的大卫P.诺顿，与史蒂文W.英特尔公司的约翰斯顿、韩国成均馆大学的Sung Min Cho和佛罗里达大学材料科学与工程的Karin Pruessner获得了化学合作研究项目的资助，该项目的资金由化学系、物理系、分子、细胞生物学系和多学科活动办公室提供。 这个多方面的团队将研究新的扩散阻挡层材料，这些材料对未来几代集成电路的铜扩散比氮化钛更稳定。该合作项目涉及制备用于金属有机化学气相沉积（MOCVD）和WNx原子层沉积（ALD）的单一源前体，然后筛选前体，CVD和ALD生长研究以及沉积材料的表征。对MOCVD和物理气相沉积（PVD）WNx薄膜的微观结构和Cu扩散的比较研究将有助于评估它们在阻挡应用中的潜力。电子工业中的一个关键问题，开发合适的阻挡Cu扩散的阻挡材料和在高深宽比通孔中沉积它的方法，将使用多学科方法进行研究。沉积工艺改进、材料表征、计算建模和器件制造。除了新材料外，研究人员还将研究WNx。 学生和博士后将获得接触到基于团队的培训和解决问题的技能，达到自己的研究生学习学科之外。此外，与英特尔的互动将拓宽他们的视野，超越学术研究。这种合作有着反映当地人口多样性的历史。教育模块开发和面向8-12年级女生的外联活动将鼓励其他人参与相关的科学领域。