SBIR Phase II: Relief-Free Infrared Diffractive Optics Based on Semiconductor Materials
SBIR Phase II: Relief-Free Infrared Diffractive Optics Based on Semiconductor Materials
批准号:
0923706
负责人:
Sergei Krivoshlykov
金额:
$50.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2009
资助国家:
美国
项目状态:
已结题
起止时间:
2009-08-15 至 2011-07-31
中文摘要
该奖项是根据2009年《美国复苏和再投资法案》(Public Law 111-5)资助的。这一小型企业创新研究(SBIR)第二阶段项目将开发工作在红外光谱区域的新一代无浮雕薄板衍射光学元件。衍射光学采用体位相全息结构,利用专利的光调变工艺将其记录在半导体材料的红外透明波段,从而在低强度光照射下产生材料折射率的急剧变化。该项目的第一阶段通过演示锌硒红外材料的光改性和制作第一个模型元件来证明所提出的概念的可行性。该技术可立即应用于波长达1.9?m的衍射光学元件、体全息全息光栅、位相延迟片以及波长达8?m的减反射层的制造。在二期工程中,该技术将被优化并应用于制造工作在较长波长的红外衍射光学元件的原型组件,包括重要波长的CO_2激光器10.6?m和大气透明窗口3-5?m和8-12?m。所开发的光修饰工艺适应性强,为制造面向各种市场的多种产品创造了丰富的技术平台。这项技术的成功实施将带来新一代高效率的无浮雕红外衍射光学和亚波长器件,包括衍射光栅、分束器、整形器、人工双折射半导体材料、相位延迟板和波片。基于半导体材料的红外衍射光学器件的无浮雕元件能够承受高光强,并执行复杂的光管理功能。另一个重要的应用是在红外半导体光学器件上制作高稳定的减反射层。红外衍射光学的市场包括国防和航空航天工业、激光工业、光谱设备、传感器和探测器、夜视光学、工业过程控制、材料加工、切割和焊接、环境监测、医疗诊断和外科手术。
英文摘要
"This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5)."This Small Business Innovation Research (SBIR) Phase II project will develop a new generation of relief-free thin-plate components of diffractive optics operating in the infrared region of spectrum. The diffractive optics employs volume phase holographic structures, which are optically recorded in semiconductor materials transparent at the infrared wavelengths using proprietary process of photo-modification for producing dramatic change of the material refractive index under illumination with low intensity light. Phase I of this project proved feasibility of the proposed concept by demonstrating photo modification of ZnSe infrared material and fabricating the first model components. The developed technology can be immediately applied to fabrication of diffractive optics, volume phase holographic gratings, and phase retardation plates for wavelengths up to 1.9 ìm, as well as antireflection layers for wavelengths up to 8 ìm. In Phase II project the technology will be optimized and applied to fabrication of the prototype components of infrared diffractive optics operating at longer wavelengths, including the important wavelength of CO2 laser 10.6 ìm and windows of atmospheric transparency 3-5 and 8-12 ìm. The developed photo-modification process is highly adaptable and creates a rich technology platform for fabrication of a broad range of products for a large variety of markets. Successful implementation of this technology will result in a new generation of high efficiency relief-free infrared diffractive optics and sub-wavelength components, including diffraction gratings, beam splitters, beam shapers, semiconductor materials with artificial birefringence, phase retardation plates and wave plates. The relief-free components of infrared diffractive optics based on semiconductor materials are capable to withstand high light intensities and perform complicated light management functions. Another important application is the fabrication of highly stable anti-reflection (AR) layers on infrared semiconductor optics. The market for infrared diffractive optics includes defense and airspace industry, laser industry, spectral devices, sensors and detectors, night vision optics, industrial process control, material processing, cutting and welding, environmental monitoring, medical diagnostics and surgery.
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SBIR Phase I: Relief-Free Infrared Diffraction Optics Based on Semiconductor Materials
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批准号:0740174
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项目类别:Standard Grant
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资助金额:$10.0万
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财政年份:2008
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负责人:Sergei Krivoshlykov
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依托单位:
国内基金
海外基金
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