Time-dependent quantum simulation of nanodevices

纳米器件的时间相关量子模拟

• 批准号: 0925422
• 负责人: Kalman Varga
• 金额: $ 29.58万
• 依托单位: Vanderbilt University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-09-01 至 2013-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0925422&HistoricalAwards=false
• 关键词: Time; dependent; quantum; simulation; nanodevices

During the last few years impressive progress has been achieved in the development, fabrication and practical implementation of nanodevices to bridge the terahertz gap. The terahertz gap, lying roughly between 100 GHz and 30 THz, exists because the operating because the operating frequencies of transistors and lasers (typical semiconductor devices) do not overlap. The realization of THz nanodevices extends the range of electronics beyond the 100GHz barrier which is a major breakthrough leading to new transistors with higher speed, lower power usage and reduced heat generation. Besides important applications in security, biological sensing/imaging and high speedcommunications, the THz techniques allow probing electron dynamics in nanostructures observing electron propagation in real time. This research addresses the theoretical and and quantum simulation challenges of emerging new nanodevices operating at the terahertz (THz) region and beyond. The theoretical description and computational simulation of these systems is challenging because one should use time-dependent quantum mechanical approach with time-varying electromagnetic fields. This work represent the first systematic approach to studying the high frequency behaviour of nanodevices by time-dependent quantum simulations. The research will primarily focus on simulating and predicting the high-frequency behaviour of prototypical nanodevices, such as nanowires, carbon nanotubes, graphene, molecular device based field-effect transistors (FETs) and realistic (e.g. FINFET) transistors. The key contribution will be in providing quantitative descriptions of AC characteristics and high frequency properties of novel nanodevices including graphene, carbon nanotube, silicon nanowire transistors and nanoscale FINFETs. The results will be validated against experimental data through collaborations with experimental groups and will ultimately be cast in a form that will be suitable for incorporation in compact models for circuit modeling so that they can serve in the design of emerging technologies.

在过去的几年里，在纳米器件的开发、制造和实际应用方面取得了令人印象深刻的进展，以弥补太赫兹的差距。太赫兹间隙大约在100 GHz和30太赫兹之间，之所以存在，是因为晶体管和激光器(典型的半导体器件)的工作频率不重叠。太赫兹纳米器件的实现将电子学的范围扩展到了100 GHz以上，这是一项重大突破，导致了新的晶体管具有更快的速度、更低的功耗和更少的热量产生。除了在安全、生物传感/成像和高速通信方面的重要应用外，太赫兹技术还可以探测纳米结构中的电子动力学，实时观察电子传播。这项研究解决了运行在太赫兹(THz)区域及更远地区的新兴新纳米设备的理论和量子模拟挑战。这些系统的理论描述和计算模拟是具有挑战性的，因为人们需要使用具有时变电磁场的含时量子力学方法。这项工作代表了第一个通过含时量子模拟来研究纳米器件高频行为的系统方法。这项研究将主要集中于模拟和预测典型纳米器件的高频行为，如纳米线、碳纳米管、石墨烯、基于分子器件的场效应晶体管(FET)和现实(例如FINFET)晶体管。主要贡献将是对新型纳米器件的交流特性和高频特性提供定量描述，包括石墨烯、碳纳米管、硅纳米线晶体管和纳米FINFET。结果将通过与实验小组的合作，根据实验数据进行验证，并最终将以一种适合纳入电路建模的紧凑模型的形式铸造，以便它们能够服务于新兴技术的设计。